Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1201
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR

DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and
voltage amplifier applications.

FEATURES
*High voltage: VCEO= -120V
*High transition frequency: fT=120MHz(typ.)
*Pc=1 to 2 W(mounted on ceramic substrate)

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1201G-x-AB3-R
2SA1201L-x-T92-B
2SA1201G-x-T92-B
2SA1201L-x-T92-K
2SA1201G-x-T92-K
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Package
SOT-89
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-92
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2SA1201

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
RATINGS
UNIT
-120
V
-120
V
-5
V
-800
mA
-160
mA
500
mW
SOT-89
Collector Power Dissipation
PC
1000 (Note 2)
mW
TO-92
600
mW
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on cermic substrate( 250mm2 × 0.8t )

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance

SYMBOL
VCBO
VCEO
VEBO
IC
IB
SYMBOL
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
VBE
fT
COB
TEST CONDITIONS
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -120V, IE=0
VEB= -5V, IC=0
VCE= -5V, IC= -100mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -100mA
VCE= -5V, IC= -100mA
VCB= -10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-120
V
-5
V
-0.1
μA
-0.1
μA
80
240
-1.0
V
-1.0
V
120
MHz
30
pF
CLASSIFICATION OF hFE
RANK
RANGE
O
80 - 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
120 - 240
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QW-R204-024.E
2SA1201
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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