Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB1260
PNP SILICON TRANSISTOR
POWER TRANSISTOR

DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon
transistor.

FEATURES
* High breakdown voltage and high current.
* BVCEO= -80V, IC= -1A
* Good hFE linearity.
* Low VCE(SAT)

ORDERING INFORMATION
Ordering Number
2SB1260G-x-AB3-R
2SB1260G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector

Package
SOT-89
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
E: Emitter
MARKING
SOT-89
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Copyright © 2015 Unisonic Technologies Co., Ltd
TO-252
1 of 4
QW-R208-017.F
2SB1260

PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-80
V
Collector -Emitter Voltage
VCEO
-80
V
Emitter -Base Voltage
VEBO
-5
V
Peak Collector Current (single pulse, Pw=100ms)
ICM
-2
A
DC Collector Current
IC
-1
A
SOT-89
0.5
W
Power Dissipation
PD
TO-252
1.9
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
Collector Base Breakdown Voltage
BVCBO
Collector Emitter Breakdown Voltage
BVCEO
Emitter Base Breakdown Voltage
BVEBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain(Note 1)
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Transition Frequency
fT
Output Capacitance
Cob
Note 1: Pulse test: PW<300s, Duty Cycle<2%

TEST CONDITIONS
IC= -50μA
IC= -1mA
IE= -50μA
VCB=-60V
VEB=-4V
VCE=-3V, IOUT=-0.1A
IC=-500mA, IB=-50mA
VCE= -5V, IE=50mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
MIN
-80
-80
-5
TYP
MAX
-1
-1
390
-0.4
82
100
25
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82 ~ 180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
120 ~ 270
R
180 ~ 390
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Collector Saturation Voltage, VCE(SAT) ( V)
DC Current Gain, hFE
Collector Current, Ic(mA)
Collector Current, Ic(mA)
■
Collector Output Capacitance, Cob (pF)
Transition Frequency, fT(MHz)
2SB1260
www.unisonic.com.tw
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS
UNISONIC TECHNOLOGIES CO., LTD
QW-R208-017.F
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2SB1260

PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-017.F