UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES *Pb-free plating product number: 8N60L * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 8N60-x-TA3-T 8N60L-x-TA3-T 8N60-x-TF3-T 8N60L-x-TF3-T www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 8 QW-R502-115,B 8N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 7.5 A TC = 25°C 7.5 A Continuous Drain Current ID TC = 100°C 4.6 A Pulsed Drain Current (Note 1) IDM 30 A Single Pulsed (Note 2) EAS 230 mJ Avalanche Energy 14.7 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation PD TO-220F 48 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 8N60-A 8N60-B THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL TO-220 TO-220F TO-220 TO-220F θJA θJC RATING 62.5 62.5 0.85 2.6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 8N60-A 8N60-B Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BVDSS VGS = 0 V, ID = 250 µA IDSS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V IGSS MIN TYP MAX UNIT 600 650 VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.75 A VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 300V, ID = 7.5 A, RG = 25Ω (Note 4, 5) VDS= 480V,ID= 7.5A, VGS= 10 V (Note 4, 5) V V µA nA nA 10 100 -100 △BVDSS/△TJ ID = 250 µA, Referenced to 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.7 2.0 1.0 V/℃ 4.0 1.2 V Ω 965 1255 105 135 12 16 pF pF pF 16.5 45 60.5 130 81 170 64.5 140 28 36 4.5 12 ns ns ns ns nC nC nC 2 of 8 QW-R502-115,B 8N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.5 A, dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 365 3.4 1.4 V 7.5 A 30 A ns µC 3 of 8 QW-R502-115,B 8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-115,B 8N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-115,B 8N60 TYPICAL CHARACTERISTICS Body Diode Forward Voltage vs. Source Current On-Resistance Variation vs. Drain Current and Gate Voltage 6 10 5 VGS=10V 4 3 VGS=20V 2 1 0 Note: TJ=25℃ 0 5 10 15 20 Drain Current, ID (A) Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) Power MOSFET 150℃ 25℃ 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) 1900 1700 1500 1300 Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Ciss 12 10 VDS=300V 8 1100 900 700 Gate Charge Characteristics Coss 4 2 Note: ID=8A 0 10 Drain-SourceVoltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDS=120V 6 Crss 500 Notes: 300 1. V =0V GS 100 2. f = 1MHz 0 0.1 1 VDS=480V 0 5 10 15 20 25 30 Total Gate Charge, QG (nC) 6 of 8 QW-R502-115,B 8N60 TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature 3.0 1.2 2.5 1.1 2.0 1.0 1.5 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -100 0.0 -100 -50 0 50 100 150 200 Junction Temperature, TJ (℃) 100 Note: 1. VGS=10V 2. ID=4A 0.5 -50 0 50 100 150 200 Junction Temperature, TJ (℃) Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area 10 Operation in This Area is Limited by RDS(on) Drain Current, ID (A) 100µs Drain Current, ID (A) Power MOSFET 100µs 10 1ms DC 1 10ms Notes: 1. TJ=25℃ 2. TJ=150℃ 3. Single Pulse 0.1 8 6 4 2 0 1 10 100 1000 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, TC (℃) Transient Thermal Response Curve 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Single pulse 0.01 10-5 Notes: 1. θJC (t) = 0.85℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-115,B 8N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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