UTC-IC 1N70-T92-B

UNISONIC TECHNOLOGIES CO., LTD
1N70
Power MOSFET
1.2 Amps, 700 Volts
N-CHANNEL MOSFET
„
DESCRIPTION
The UTC 1N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„
FEATURES
* RDS(ON) =11.5Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
*Pb-free plating product number: 1N70L
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
1N70-T92-B
1N70L-T92-B
1N70-T92-K
1N70L-T92-K
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Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Box
Bulk
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QW-R502-171,A
1N70
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 1)
IDM
4.8
A
Single Pulsed (Note 2)
EAS
50
mJ
Avalanche Energy
4.0
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
PD
3
W
Junction Temperature
TJ
+150
℃
℃
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
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SYMBOL
θJA
θJc
RATINGS
79
29
UNIT
℃/W
℃/W
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QW-R502-171,A
1N70
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 250µA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=300V, ID=1.2A, RG=50Ω
Turn-On Rise Time
tR
(Note 4,5)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=1.2A
Gate-Source Charge
QGS
(Note 4,5)
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS = 1.2A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS=0V, IS = 1.2A
dIF/dt = 100A/µs (Note1)
Reverse Recovery Charge
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
5. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
700
10
100
-100
0.4
2.0
V
µA
nA
nA
V/℃
4.0
9.3 11.5
V
Ω
120 150
20
25
3.0 4.0
pF
pF
pF
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
ns
ns
ns
ns
nC
nC
nC
1.4
V
1.2
A
4.8
A
160
0.3
ns
µC
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QW-R502-171,A
1N70
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-171,A
1N70
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-171,A
1N70
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Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
VDS=50V
250μs Pulse Test
Top:
100
100
125℃
10-1
25℃
250μs Pulse Test
TC=25℃
10-2
10-1
10-1
2
101
100
4
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
TJ=25℃
VGS=10V
VGS=20V
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
8
10
Source- Drain Diode Forward Voltage
On-Resistance vs. Drain Current
25
6
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
30
-40℃
VGS=0V
250μs Pulse Test
100
125℃
10-1
0.2
2.5
0.6
0.8
1.0
1.2
1.4
1.6
Source-Drain Voltage, VSD (V)
Capacitance (pF)
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
0.4
25℃
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QW-R502-171,A
1N70
Drain-Source On-Resistance, RDS(ON)
(Normalized) (Ω)
Drain-Source Breakdown Voltage, BVDSS,
(Normalized) (V)
TYPICAL CHARACTERISTICS(Cont.)
Max. Drain Current vs. Case Temperature
Max. Safe Operating Area
1.2
Operation in This Area is
Limited by RDS(on)
101
Drain Current, ID (A)
Drain Current, ID (A)
100μs
1ms
100
10ms
DC
10-1
0.6
0.3
Tc=25℃
TJ=150℃
Single Pulse
10-2
100
0.9
101
102
103
Drain-Source Voltage, VDS (V)
0.0
25
50
75
100
125
150
Case Temperature, TC (℃)
Thermal Response, θJC (t)
„
Power MOSFET
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QW-R502-171,A
1N70
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-171,A