HI-200, HI-201 Data Sheet October 1999 File Number 3121.4 Dual/Quad SPST, CMOS Analog Switches Features HI-200/HI-201 (dual/quad) are monolithic devices comprising independently selectable SPST switches which feature fast switching speeds (HI-200 240ns, and HI-201 185ns) combined with low power dissipation (15mW at 25oC). Each switch provides low “ON” resistance operation for input signal voltage up to the supply rails and for signal current up to 80mA. Rugged DI construction eliminates latch-up and substrate SCR failure modes. • Analog Voltage Range . . . . . . . . . . . . . . . . . . . . . . . ±15V All devices provide break-before-make switching and are TTL and CMOS compatible for maximum application versatility. HI-200/HI-201 are ideal components for use in high frequency analog switching. Typical applications include signal path switching, sample and hold circuit, digital filters, and operational amplifier gain switching networks. • Analog Current Range . . . . . . . . . . . . . . . . . . . . . . . 80mA • Turn-On Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240ns • Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55Ω • Low Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .15mW • TTL/CMOS Compatible Applications • High Frequency Analog Switching • Sample and Hold Circuits • Digital Filters • Operational Amplifier Gain Switching Networks Ordering Information Functional Diagram PART NUMBER TEMPERATURE RANGE (oC) HI1-0200-5 0 to 75 14 Ld CERDIP F14.3 HI2-0200-5 0 to 75 10 Pin Metal Can T10.B PACKAGE PKG. NO. V+ HI3-0200-5 0 to 75 14 Ld PDIP E14.3 HI1-0201-2 -55 to 125 16 Ld CERDIP F16.3 HI1-0201-4 -25 to 85 16 Ld CERDIP F16.3 HI1-0201-5 0 to 75 16 Ld CERDIP F16.3 HI3-0201-5 0 to 75 16 Ld PDIP E16.3 HI4P0201-5 0 to 75 20 Ld PLCC N20.35 HI9P0201-5 0 to 75 16 Ld SOIC M16.15 HI9P0201-9 -40 to 85 16 Ld SOIC M16.15 1 VREF INPUT SOURCE LOGIC INPUT GATE REFERENCE, LEVEL SHIFTER, AND DRIVER SWITCH CELL GATE DRAIN OUTPUT V- TRUTH TABLE LOGIC HI-200 HI-201 0 ON ON 1 OFF OFF CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999 HI-200, HI-201 (Switches Shown For Logic “1” Input) 13 NC OUT1 2 15 OUT2 GND 3 12 V+ IN1 3 14 IN2 NC 4 11 NC V- 4 13 V+ IN2 5 10 IN1 GND 5 12 VREF IN4 6 11 IN3 OUT4 7 10 OUT3 A4 8 OUT2 6 9 OUT1 8 VREF V- 7 9 A3 OUT2 NC 2 3 2 1 20 19 IN1 4 18 IN2 V- 5 17 V+ NC 6 16 NC GND 7 15 VREF IN4 8 14 IN3 HI-200 (METAL CAN) TOP VIEW V+ 9 10 11 12 13 OUT3 16 A2 A2 1 A3 A1 NC 14 A1 A4 A2 1 NC HI-201 (PLCC) TOP VIEW A1 HI-201 (CERDIP, PDIP, SOIC) TOP VIEW OUT1 HI-200 (CERDIP, PDIP) TOP VIEW OUT4 Pinouts 10 A1 1 9 IN1 2 8 OUT1 GND 3 7 VREF A2 IN2 4 6 5 V- OUT2 Schematic Diagrams TTL/CMOS REFERENCE CIRCUIT VREF CELL HI-200 TTL/CMOS REFERENCE CIRCUIT VREF CELL HI-201 V+ V+ R6 300 R2 5K QP2 QP1 QP5 GND QP4 MP13 TO P2 QP5 TO P2 QN1 R3 24.2K QN2 VREF QN4 QN1 D3 QP3 VREF QN4 QP4 QP2 QP1 QP3 MP13 R6 600 R2 5K R4 5.4K QN2 VLL R5 7.9K GND MN15 R3 24.2K D3 MN14 MN16 MN17 V- R7 100K MN14 R4 5.4K MP14 QP6 MN15 V- VLL QN3 R5 7.9K MN16 MN17 R7 100K GND GND 2 HI-200, HI-201 Schematic Diagrams (Continued) SWITCH CELL A’ QN11 V+ INPUT QN12 QP11 OUTPUT QN13 V- QP12 A’ DIGITAL INPUT BUFFER AND LEVEL SHIFTER V+ QP3 QP1 QP5 QP4 A’ V+ QN1 D1 QP6 QP7 QN6 QN7 QP8 QP10 QP9 TO VLL TO VREF 200Ω QN8 D2 QN9 QN10 QP2 A VA’ QN2 QN4 QN3 V- 3 QN5 HI-200, HI-201 Absolute Maximum Ratings Thermal Information Supply Voltage (V+ to V-). . . . . . . . . . . . . . . . . . . . . . . . . 44V (±22) VREF to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V, -5V Digital Input Voltage . . . . . . . . . . . . . . . . . . . . . . (V+) +4V to (V-) -4V Analog Input Voltage (One Switch) . . . . . . . . . . (V+) +2V to (V-) -2V Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W) 14 Ld CERDIP Package . . . . . . . . . . . . 80 24 16 Ld CERDIP Package . . . . . . . . . . . . 75 20 PLCC Package. . . . . . . . . . . . . . . . . . . 80 N/A PDIP Package . . . . . . . . . . . . . . . . . . . 95 N/A 16 Ld SOIC Package . . . . . . . . . . . . . . 110 N/A 10 Pin Metal Can Package . . . . . . . . . . 160 75 Maximum Storage Temperature. . . . . . . . . . . . . . . . -65oC to 150oC Maximum Junction Temperature (Hermetic Packages) . . . . . 175oC Maximum Junction Temperature (Plastic Packages) . . . . . . . 150oC Maximum Lead Temperature (Soldering, 10s). . . . . . . . . . . . 300oC (PLCC and SOIC - Lead Tips Only) Operating Conditions Temperature Ranges HI-201-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC HI-201-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25oC to 85oC HI-200-5, HI-201-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC HI-201-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications Supplies = +15V, -15V; VREF = Open; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = 0.8V TEST CONDITIONS -2 -4, -5, -9 TEMP (oC) MIN TYP MAX MIN TYP MAX UNITS HI-200 25 - 240 500 - 240 - ns HI-201 25 - 185 500 - 185 - ns Full - 1000 - - 1000 - ns HI-200 25 - 330 500 - 500 - ns HI-201 25 - 220 500 - 220 - ns Full - 1000 - - 1000 - ns HI-200 25 - 70 - - 70 - dB HI-201 25 - 80 - - 80 - dB Input Switch Capacitance, CS(OFF) 25 - 5.5 - - 5.5 - pF Output Switch Capacitance, CD(OFF) 25 - 5.5 - - 5.5 - pF Output Switch Capacitance, CD(ON) 25 - 11 - - 11 - pF Digital Input Capacitance, CA 25 - 5 - - 5 - pF Drain-to-Source Capacitance, CDS(OFF) 25 - 0.5 - - 0.5 - pF Input Low Threshold, VAL Full - - 0.8 - - 0.8 V Input High Threshold, VAH Full 2.4 - - 2.4 - - V Full - - 1.0 - - 1.0 µA Full -15 - +15 -15 - +15 V 25 - 55 70 - 55 80 Ω Full - 80 100 - 72 100 Ω PARAMETER DYNAMIC CHARACTERISTICS Switch ON Time, tON Switch OFF Time, tOFF Off Isolation (Note 4) DIGITAL INPUT CHARACTERISTICS Input Leakage Current (High or Low), IA (Note 3) ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VS ON Resistance, rON (Note 2) 4 HI-200, HI-201 Electrical Specifications Supplies = +15V, -15V; VREF = Open; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = 0.8V (Continued) TEST CONDITIONS -2 -4, -5, -9 TEMP (oC) MIN TYP MAX MIN TYP MAX UNITS 25 - 1 5 - 1 50 nA HI-200 Full - 100 500 - 10 500 nA HI-201 25 - 2 5 - 2 50 nA Full - - 500 - - 250 nA 25 - 1 5 - 1 50 nA HI-200 Full - 100 500 - 10 500 nA HI-201 25 - 2 5 - 2 50 nA Full - 35 500 - 35 250 nA 25 - 1 5 - 1 50 nA HI-200 Full - 100 500 - 10 500 nA HI-201 25 - 2 5 - 2 50 nA Full - - 500 - - 250 nA 25 - 15 - - 15 - mW Full - - 60 - - 60 mW 25 - 0.5 - - 0.5 - mA Full - - 2.0 - - 2.0 mA 25 - 0.5 - - 0.5 - mA Full - - 2.0 - - 2.0 mA PARAMETER OFF Input Leakage Current, IS(OFF) OFF Output Leakage Current, ID(OFF) ON Leakage Current, ID(ON) (Note 6) (Note 6) (Note 6) POWER SUPPLY CHARACTERISTICS (Note 5) Power Dissipation, PD Current, I+ Current, I- NOTES: 2. VOUT = ±10V, IOUT = 1mA. 3. Digital Inputs are MOS gates: typical leakage is < 1nA. 4. VA = 5V, RL = 1kΩ, CL = 10pF, VS = 3VRMS , f = 100kHz. 5. VA = +3V or VA = 0V for Both Switches. 6. Refer to Leakage Current Measurements (Figure 2). Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±15V, VAH = 2.4V, VAL = 0.8V and VREF = Open 1mA V V2 2 r ON = ------------1mA IN OUT ±VIN FIGURE 1A. ON RESISTANCE TEST CIRCUIT 5 HI-200, HI-201 Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±15V, VAH = 2.4V, VAL = 0.8V and VREF = Open (Continued) 80 100 V+ = +10V V- = -10V VIN = 0V 60 ON RESISTANCE (Ω) ON RESISTANCE (Ω) 70 50 40 30 20 V+ = +12.5V V- = -12.5V 50 V+ = +15V V- = -15V 10 0 -50 -25 0 25 50 75 100 125 0 -15 -10 -5 0 5 ANALOG SIGNAL LEVEL (V) TEMPERATURE (oC) FIGURE 1B. ON RESISTANCE vs TEMPERATURE 10 15 FIGURE 1C. HI-200 ON RESISTANCE vs ANALOG SIGNAL LEVEL FIGURE 1. ON RESISTANCE IS(OFF) 100 A ID(OFF) IN OUT A ±14V + 14V CURRENT (nA) IS(OFF) / ID(OFF) 10 FIGURE 2B. OFF LEAKAGE CURRENT TEST CIRCUIT ID(ON) IN 1.0 OUT A 0.1 25 50 75 100 ID(ON) ±14V 125 TEMPERATURE (oC) FIGURE 2A. LEAKAGE CURRENT vs TEMPERATURE FIGURE 2C. ON LEAKAGE CURRENT TEST CIRCUIT FIGURE 2. LEAKAGE CURRENTS 90 SWITCH CURRENT (mA) 80 70 60 50 40 30 20 IN 10 OUT HI-201 ±VIN 0 0 1 2 3 4 5 6 7 VOLTAGE ACROSS SWITCH (±V) FIGURE 3A. SWITCH CURRENT vs VOLTAGE FIGURE 3. SWITCH CURRENT 6 FIGURE 3B. TEST CIRCUIT I HI-200, HI-201 Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±15V, VAH = 2.4V, VAL = 0.8V and VREF = Open (Continued) VAH = 4V DIGITAL INPUT 50% 50% VAL = 0V tON tOFF 80% 80% 0V SWITCH OUTPUT FIGURE 4A. MEASUREMENT POINTS VA VA OUTPUT OUTPUT VA = 0 to 4V Vertical: 2V/Div. Horizontal: 100ns/Div. VA = 0 to 15V Vertical: 5V/Div. Horizontal: 100ns/Div. FIGURE 4B. WAVEFORMS WITH TTL COMPATIBLE LOGIC INPUT FIGURE 4C. WAVEFORMS WITH CMOS COMPATIBLE LOGIC INPUT FIGURE 4. SWITCH tON AND tOFF 140 OFF ISOLATION (dB) 120 100 80 RL = 1kΩ 60 40 20 0 100Hz 1kHz 10kHz 100kHz FREQUENCY (Hz) 1MHz FIGURE 5. HI-201 OFF ISOLATION vs FREQUENCY For more information see Application Notes AN520, AN521, AN531, AN532 and AN557. 7 HI-200, HI-201 Application Information Single Supply Operation The switch operation of the HI-200/201 is dependent upon an internally generated switching threshold voltage optimized for ±15V power supplies. The HI-200/201 does not provide the necessary internal switching threshold in a single supply system. Therefore, if single supply operation is required, the HI-300 series of switches is recommended. The HI-300 series will remain operational to a minimum +5V single supply. Switch performance will degrade as power supply voltage is reduced from optimum levels (±15V). So it is recommended that a single supply design be thoroughly evaluated to ensure that the switch will meet the requirements of the application. For further information see Application Notes AN520, AN521, AN531, AN532, AN543 and AN557. 8 HI-200 Die Characteristics DIE DIMENSIONS: PASSIVATION: 54 mils x 79 mils Type: Nitride over Silox Nitride Thickness: 3.5kÅ ±1kÅ Silox Thickness: 12kÅ ±2kÅ METALLIZATION: Type: CuAl Thickness: 16kÅ ±2kÅ WORST CASE CURRENT DENSITY: 2 x 105 A/cm2 at 25mA Metallization Mask Layout HI-200 GND 2 IN 2 OUT 2 1 10 9 3 4 5 V- 9 V+ A1 A2 6 VREF 8 IN 1 7 OUT 1 HI-201 Die Characteristics DIE DIMENSIONS: PASSIVATION: 81 mils x 85 mils Type: Nitride over Silox Nitride Thickness: 3.5kÅ ±1kÅ Silox Thickness: 12kÅ ±2kÅ METALLIZATION: Type: CuAl Thickness: 16kÅ ±2kÅ WORST CASE CURRENT DENSITY: 2 x 105 A/cm2 at 25mA Metallization Mask Layout HI-201 OUT 1 2 IN 1 3 V- 4 GND 5 IN 4 6 OUT 4 7 A1 A2 1 16 8 9 A4 A3 15 OUT 2 14 IN 2 13 V+ 12 VREF 11 IN 3 10 OUT 3 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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