MCP6V91U DATA SHEET (03/04/2016) DOWNLOAD

MCP6V91/1U/2/4
10 MHz, Zero-Drift Op Amps
Features
General Description
• High DC Precision:
- VOS Drift: ±17 nV/°C (maximum, VDD = 5.5V)
- VOS: ±9 µV (maximum)
- AOL: 126 dB (minimum, VDD = 5.5V)
- PSRR: 117 dB (minimum, VDD = 5.5V)
- CMRR: 118 dB (minimum, VDD = 5.5V)
- Eni: 0.24 µVP-P (typical), f = 0.1 Hz to 10 Hz
- Eni: 0.08 µVP-P (typical), f = 0.01 Hz to 1 Hz
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR) at 1.8 GHz: 93 dB
• Low Power and Supply Voltages:
- IQ: 1.1 mA/amplifier (typical)
- Wide supply voltage range: 2.4V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2X3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-rail input/output
- Gain Bandwidth Product: 10 MHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
The
Microchip
Technology
Incorporated
MCP6V91/1U/2/4 family of operational amplifiers
provides input offset voltage correction for very low
offset and offset drift. These devices have a gain
bandwidth product of 10 MHz (typical). They are
unity-gain stable, have virtually no 1/f noise and have
good Power Supply Rejection Ratio (PSRR) and
Common Mode Rejection Ratio (CMRR). These
products operate with a single supply voltage as low as
2.4V, while drawing 1.1 mA/amplifier (typical) of
quiescent current.
The MCP6V91/1U/2/4 family has enhanced EMI
protection
to
minimize
any
electromagnetic
interference from external sources. This feature makes
it well suited for EMI-sensitive applications such as
power
lines,
radio
stations
and
mobile
communications, etc.
The MCP6V91/1U/2/4 op amps are offered in single
(MCP6V91 and MCP6V91U), dual (MCP6V92) and
quad (MCP6V94) packages. They were designed
using an advanced CMOS process.
Typical Applications
•
•
•
•
•
Portable Instrumentation
Sensor Conditioning
Temperature Measurement
DC Offset Correction
Medical Instrumentation
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab® Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Related Parts
•
•
•
•
•
MCP6V11/1U/2/4: Zero-Drift, Low Power
MCP6V31/1U/2/4: Zero-Drift, Low Power
MCP6V61/1U/2/4: Zero-Drift, 1 MHz
MCP6V71/1U/2/4: Zero-Drift, 2 MHz
MCP6V81/1U/2/4: Zero-Drift, 5 MHz
 2015-2016 Microchip Technology Inc.
Package Types
MCP6V91
SOT-23
VOUT 1
VSS 2
VIN+ 3
MCP6V91U
SC70, SOT-23
5 VDD
VIN+ 1
4 VIN–
VSS 2
VIN– 3
MCP6V92
MSOP
VOUTA
VINA–
VINA+
VSS
1
2
3
4
8
7
6
5
5 VDD
4 VOUT
MCP6V92
2×3 TDFN*
VDD
VOUTA 1
VOUTB VINA- 2
VINB- VINA+ 3
VSS 4
VINB+
8 VDD
EP
9
7 VOUTB
6 VINB5 VINB+
MCP6V94
TSSOP
VOUTA
VINAVINA+
VDD
VINB+
VINBVOUTB
1
2
3
4
5
6
7
14 VOUTD
13 VIND12 VIND+
11 VSS
10 VINC+
9 VINC8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
DS20005434B-page 1
MCP6V91/1U/2/4
Typical Application Circuit
R1
R3
R2
R2
VDD/2
R4
C2
+
R5
U2
VOUT
-
8
+
6
U1
MCP6XXX
VDD/2
MCP6V91
Offset Voltage Correction for Power Driver
Input Offset Voltage (µV)
VIN
Figures 1 and 2 show input offset voltage of the singlechannel device MCP6V91 versus ambient temperature
for different power supply voltages.
26 Samples
VDD = 2.4V
4
2
0
-2
-4
-6
-8
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 1:
Input Offset Voltage vs.
Ambient Temperature with VDD = 2.4V.
Input Offset Voltage (µV)
8
6
26 Samples
VDD = 5.5V
4
2
0
-2
-4
-6
-8
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
125
FIGURE 2:
Input Offset Voltage vs.
Ambient Temperature with VDD = 5.5V.
As seen in Figures 1 and 2, the MCP6V91/1U op amps
have excellent performance across temperature.
The input offset voltage temperature drift (TC1) shown
is well within the specified maximum values of
17 nV/°C at VDD = 5.5V and 24 nV/°C at VDD = 2.4V.
This performance supports applications with stringent
DC precision requirements. In many cases, it will not be
necessary to correct for temperature effects (i.e.,
calibrate) in a design. In the other cases, the correction
will be small.
DS20005434B-page 2
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings †
VDD – VSS .................................................................................................................................................................6.5V
Current at Input Pins ..............................................................................................................................................±2 mA
Analog Inputs (VIN+ and VIN–)(1)...............................................................................................VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ....................................................................................................VSS – 0.3V to VDD + 0.3V
Difference Input Voltage .................................................................................................................................|VDD – VSS|
Output Short Circuit Current ........................................................................................................................... Continuous
Current at Output and Supply Pins ...................................................................................................................... ±30 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +150°C
ESD protection on all pins (HBM, CDM, MM)
MCP6V91/1U   4 kV, 1.5 kV, 400V
MCP6V92/4   4 kV, 1.5 kV, 300V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: See Section 4.2.1 “Rail-to-Rail Inputs”.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-9
—
+9
µV
TC1
-24
—
+24
nV/°C
TA = -40 to +125°C,
VDD = 2.4V (Note 1)
TC1
-17
—
+17
nV/°C
TA = -40 to +125°C,
VDD = 5.5V (Note 1)
Input Offset Voltage Drift with
Temperature
(Linear Temperature Coefficient)
MCP6V92/4
TC1
-30
—
+30
nV/°C
TA = -40 to +125°C,
(Note 1)
Input Offset Voltage Quadratic
Temperature Coefficient
MCP6V91/1U
TC2
—
±30
—
pV/°C2 TA = -40 to +125°C
VDD = 2.4V
TC2
—
±12
—
pV/°C2 TA = -40 to +125°C
VDD = 5.5V
TC2
—
±74
—
pV/°C2 TA = -40 to +125°C
VDD = 2.4V
TC2
—
±48
—
pV/°C2 TA = -40 to +125°C
VDD = 5.5V
Input Offset Voltage Drift with
Temperature
(Linear Temperature Coefficient)
MCP6V91/1U
Input Offset Voltage Quadratic
Temperature Coefficient
MCP6V92/4
Note 1:
2:
TA = +25°C
For design guidance only; not tested.
Figure 2-19 shows how VCML and VCMH changed across temperature for the first production lot.
 2015-2016 Microchip Technology Inc.
DS20005434B-page 3
MCP6V91/1U/2/4
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset Voltage Aging
∆VOS
—
±0.75
—
µV
408 hours Life Test
at +150°,
measured at +25°C.
Power Supply Rejection Ratio
PSRR
117
137
—
dB
Input Bias Current
IB
-50
±2
+50
pA
Input Bias Current across Temperature
IB
—
+10
—
pA
TA = +85°C
TA = +125°C
Input Bias Current and Impedance
IB
0
+0.2
+1
nA
Input Offset Current
IOS
-400
±100
+400
pA
Input Offset Current across Temperature
IOS
—
±75
—
pA
TA = +85°C
IOS
-500
±100
+500
pA
TA = +125°C
Common-Mode Input Impedance
ZCM
—
1013||14
—
Ω||pF
Differential Input Impedance
ZDIFF
—
1013||3
—
Ω||pF
Common-Mode
Input Voltage Range Low
VCML
—
—
VSS–0.2
V
Note 2
Common-Mode
Input Voltage Range High
VCMH
VDD+0.3
—
—
V
Note 2
Common-Mode Rejection Ratio
CMRR
112
132
—
dB
VDD = 2.4V,
VCM = -0.2V to 2.7V
(Note 2)
CMRR
118
140
—
dB
VDD = 5.5V,
VCM = -0.2V to 5.8V
(Note 2)
AOL
119
142
—
dB
VDD = 2.4V,
VOUT = 0.3V to 2.0V
AOL
126
158
—
dB
VDD = 5.5V,
VOUT = 0.3V to 5.3V
VOL
VSS
VSS+35
VSS+120
mV
RL = 1 kΩ, G = +2,
0.5V input overdrive
VOL
—
VSS+7
—
mV
RL = 10 kΩ, G = +2,
0.5V input overdrive
VOH
VDD–120
VDD–45
VDD
mV
RL = 1 kΩ, G = +2,
0.5V input overdrive
VOH
—
VDD–9
—
mV
RL = 10 kΩ, G = +2,
0.5V input overdrive
ISC
—
±15
—
mA
VDD = 2.4V
ISC
—
±40
—
mA
VDD = 5.5V
VDD
2.4
—
5.5
V
IQ
0.6
1.1
1.6
mA
VPOR
1.4
1.85
2.2
V
Common Mode
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Output
Minimum Output Voltage Swing
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Power-on Reset (POR) Trip Voltage
Note 1:
2:
IO = 0
For design guidance only; not tested.
Figure 2-19 shows how VCML and VCMH changed across temperature for the first production lot.
DS20005434B-page 4
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).
Parameters
Sym.
Min.
Typ.
Max.
Units
GBWP
—
10
—
MHz
Conditions
Amplifier AC Response
Gain Bandwidth Product
Slew Rate
SR
—
9.5
—
V/µs
Phase Margin
PM
—
60
—
°C
Eni
—
0.08
—
µVP-P
f = 0.01 Hz to 1 Hz
µVP-P
f = 0.1 Hz to 10 Hz
G = +1
Amplifier Noise Response
Input Noise Voltage
Eni
—
0.24
—
Input Noise Voltage Density
eni
—
11
—
nV/√Hz f < 2 kHz, VDD = 5.5V
Input Noise Current Density
ini
—
6
—
fA/√Hz
IMD
—
35
—
µVPK
Start-Up Time
tSTR
—
100
—
µs
G = +1, 0.1% VOUT settling (Note 2)
Offset Correction Settling Time
tSTL
—
60
—
µs
G = +1, VIN step of 2V,
VOS within 100 µV of its final value
Output Overdrive Recovery Time
tODR
—
65
—
µs
G = -10, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point (Note 3)
EMIRR
—
88
—
dB
VIN = 0.1 VPK, f = 400 MHz
—
95
—
VIN = 0.1 VPK, f = 900 MHz
—
93
—
VIN = 0.1 VPK, f = 1800 MHz
—
90
—
VIN = 0.1 VPK, f = 2400 MHz
Amplifier Distortion(1)
Intermodulation Distortion (AC)
VCM tone = 100 mVPK at 1 kHz,
GN = 11, RTI
Amplifier Step Response
EMI Protection
EMI Rejection Ratio
Note 1:
2:
3:
These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is an IMD
tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to Input (RTI).
High gains behave differently; see Section 4.3.3 “Offset at Power-Up”.
tSTL and tODR include some uncertainty due to clock edge timing.
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.4V to +5.5V, VSS = GND.
Parameters
Sym.
Min.
Typ.
Max.
Units
Specified Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5LD-SC70
JA
—
209
—
°C/W
Thermal Resistance, 5LD-SOT-23
JA
—
201
—
°C/W
Thermal Resistance, 8L-2x3 TDFN
JA
—
53
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
211
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Conditions
Temperature Ranges
Note 1
Thermal Package Resistances
Note 1:
Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
 2015-2016 Microchip Technology Inc.
DS20005434B-page 5
MCP6V91/1U/2/4
1.3
Timing Diagrams
1.4
2.4V to 5.5V
2.4V
VDD 0V
tSTR
1.001(VDD/3)
VOUT
Test Circuits
The circuits used for most DC and AC tests are shown
in Figures 1-4 and 1-5. Lay the bypass capacitors out
as discussed in Section 4.3.10 “Supply Bypassing
and Filtering”. RN is equal to the parallel combination
of RF and RG to minimize bias current effects.
0.999(VDD/3)
FIGURE 1-1:
Amplifier Start-Up.
VDD
VIN
100 nF
VDD/3
tSTL
VOS + 100 µV
RG
VOS
VOS – 100 µV
FIGURE 1-2:
Time.
Offset Correction Settling
100 nF
RG
tODR
VDD/2
VSS
FIGURE 1-3:
RISO
VIN
VDD
Output Overdrive Recovery.
VL
1 µF
+
MCP6V9X
tODR
RL
FIGURE 1-4:
AC and DC Test Circuit for
Most Noninverting Gain Conditions.
VDD
VIN
CL
VOUT
RF
VDD/3 RN
VOUT
RISO
+
MCP6V9X
VIN
1 µF
RN
CL
VOUT
RL
VL
RF
FIGURE 1-5:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
The circuit in Figure 1-6 tests the input’s dynamic
behavior (i.e., IMD, tSTR, tSTL and tODR). The
potentiometer balances the resistor network (VOUT
should equal VREF at DC). The op amp’s common-mode
input voltage is VCM = VIN/2. The error at the input
(VERR) appears at VOUT with a noise gain of 10 V/V.
11.0 kΩ 100 kΩ 500Ω
0.1%
0.1% 25 turn
VREF = VDD/3
VDD
1 µF
VIN
100 nF
MCP6V9X
11.0 kΩ 100 kΩ 249Ω
1%
0.1%
0.1%
FIGURE 1-6:
Input Behavior.
DS20005434B-page 6
RISO
0Ω
VOUT
CL
30 pF
RL
open
VL
Test Circuit for Dynamic
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
2.1
DC Input Precision
25%
8
26 Samples
TA = +25°C
MCP6V91
20%
VDD = 2.4V
VDD = 5.5V
15%
4
2
0
-2
10%
-4
5%
-8
-5
-4
-3
FIGURE 2-1:
-2 -1 0
1
2
3
Input Offset Voltage (µV)
4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Power Supply Voltage (V)
5
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage vs.
Power Supply Voltage with VCM = VCML.
8
26 Samples
TA = -40°C to +125°C
MCP6V91
VDD = 2.4V
VDD = 5.5V
20%
15%
Representative Part
VCM = VDD – 0.1V
6
Input Offset Voltage (µV)
Percentage of Occurrences
30%
25%
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
-6
0%
4
2
0
-2
10%
-4
5%
-8
-10
-8 -6 -4 -2 0
2
4
6
8
Input Offset Voltage Drift; TC1 (nV/°C)
FIGURE 2-2:
10
Input Offset Voltage Drift.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Power Supply Voltage (V)
FIGURE 2-5:
Input Offset Voltage vs.
Power Supply Voltage with VCM = VCMH.
35%
25%
20%
26 Samples
TA = -40°C to +125°C
MCP6V91
VDD = 5.5V
VDD = 2.4V
15%
8
Input Offset Voltage (µV)
30%
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
-6
0%
Percentage of Occurrences
Representative Part
VCM = 0.1V
6
Input Offset Voltage (µV)
Percentage of Occurrences
30%
Representative Part
VDD = 2.4V
6
4
2
0
-2
10%
-4
5%
-6
0%
-100 -80 -60 -40 -20 0 20 40 60 80 100
Input Offset Voltage's Quadratic Temp Co;
TC2 (pV/°C2)
FIGURE 2-3:
Input Offset Voltage
Quadratic Temperature Coefficient.
 2015-2016 Microchip Technology Inc.
-8
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Output Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Output Voltage with VDD = 2.4V.
DS20005434B-page 7
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
Representative Part
VDD = 5.5V
6
Percentage of Occurrences
Input Offset Voltage (µV)
8
4
2
0
-2
-4
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
-6
-8
60%
50%
Tester Data
599 Samples
TA = +25ºC
30%
VDD = 2.4V
20%
10%
0%
-1.6 -1.2 -0.8 -0.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
FIGURE 2-7:
Input Offset Voltage vs.
Output Voltage with VDD = 5.5V.
FIGURE 2-10:
Ratio.
4
2
0
-2
-4
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
-6
-8
-0.5
0.0
Percentage of Occurrences
Input Offset Voltage (µV)
Representative Part
VDD = 2.4V
TA = +85°C
TA = +125°C
0
-2
TA = -40°C
TA = +25°C
-8
-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Common Mode Input Voltage (V)
FIGURE 2-9:
Input Offset Voltage vs.
Common-Mode Voltage with VDD = 5.5V.
DS20005434B-page 8
1.6
50%
Tester Data
599 Samples
TA = +25ºC
40%
30%
20%
10%
0
0.2 0.4 0.6 0.8
1
1/PSRR (µV/V)
FIGURE 2-11:
Ratio.
Power Supply Rejection
80%
Percentage of Occurrences
Input Offset Voltage (µV)
Representative Part
VDD = 5.5V
4
-6
1.2
60%
-1 -0.8 -0.6 -0.4 -0.2
8
-4
0.8
Common-Mode Rejection
3.0
FIGURE 2-8:
Input Offset Voltage vs.
Common-Mode Voltage with VDD = 2.4V.
2
0.4
0%
0.5
1.0
1.5
2.0
2.5
Common Mode Input Voltage (V)
6
0
1/CMRR (µV/V)
8
6
VDD = 5.5V
40%
70%
60%
Tester Data
599 Samples
TA = +25ºC
VDD = 5.5V
50%
40%
30%
VDD = 2.4V
20%
10%
0%
-0.5 -0.4 -0.3 -0.2 -0.1 0
0.1 0.2 0.3 0.4 0.5
1/AOL (µV/V)
FIGURE 2-12:
DC Open-Loop Gain.
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Input Current Magnitude (A)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Input Offset Current
0.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
125
1m
Input Bias Current
0.0
2.5
FIGURE 2-17:
Input Bias and Offset
Currents vs. Ambient Temperature with
VDD = 5.5V.
VDD = 5.5 V
TA = +85 ºC
-0.5
2.0
Ambient Temperature (°C)
FIGURE 2-14:
DC Open-Loop Gain vs.
Ambient Temperature.
500
400
300
200
100
0
-100
-200
-300
-400
-500
0.1p
125
115
100
105
0
25
50
75
Ambient Temperature (°C)
Input Bias Current
1p
95
-25
10p Input Offset Current
85
Typical Gains
100p
75
VDD = 2.4V
VDD = 5.5V
VDD = 5.5 V
65
Input Bias, Offset Currents (A)
DC Open-Loop Gain (dB)
1n
-50
Input Bias and Offset Currents
(pA)
Input Common Mode Voltage (V)
FIGURE 2-16:
Input Bias and Offset
Currents vs. Common-Mode Input Voltage with
TA = +125°C.
FIGURE 2-13:
CMRR and PSRR vs.
Ambient Temperature.
160
155
150
145
140
135
130
125
120
115
110
105
100
1.5
125
1.0
100
55
0
25
50
75
Ambient Temperature (°C)
45
-25
35
-50
Input Bias Current
Input Offset Current
0.5
CMRR at VDD = 5.5V
CMRR at VDD = 2.4V
VDD = 5.5 V
TA = +125 ºC
0.0
PSRR
500
400
300
200
100
0
-100
-200
-300
-400
-500
-0.5
Typical Gains
25
160
155
150
145
140
135
130
125
120
115
110
105
100
Input Bias and Offset Currents
(pA)
CMRR, PSRR (dB)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
Input Common Mode Voltage (V)
FIGURE 2-15:
Input Bias and Offset
Currents vs. Common-Mode Input Voltage with
TA = +85°C.
 2015-2016 Microchip Technology Inc.
100µ
10µ
1µ
100n
10n
1n
TA = +125°C
TA = +85°C
TA = +25°C
TA = - 40°C
100p
10p
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-18:
Input Bias Current vs. Input
Voltage (Below VSS).
DS20005434B-page 9
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
Other DC Voltages and Currents
80
1 Wafer Lot
0.4
Upper (VCMH – VDD)
0.3
0.2
0.1
VDD = 2.4V
VDD = 5.5V
0.0
-0.1
-0.2
-0.3
-0.4
Lower (VCML – VSS)
-0.5
-50
-25
0
-20
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
-40
-60
0.5
1
1.5
2 2.5 3 3.5 4 4.5
Power Supply Voltage (V)
5
5.5
6
FIGURE 2-22:
Output Short-Circuit Current
vs. Power Supply Voltage.
1600
1400
VDD = 2.4V
Quiescent Current
(µA/Amplifier)
100
VDD -VOH
VDD = 5.5V
10
1200
1000
800
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
600
400
200
VOL -VSS
0
1
20
VDD = 2.4V
10
VOL - VSS
0
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 2-21:
Output Voltage Headroom
vs. Ambient Temperature.
DS20005434B-page 10
2.1
30
2.05
40
2
VDD = 5.5V
430 Samples
1 Wafer Lot
TA = +25ºC
1.95
VDD - VOH
50
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
1.9
70
Supply Current vs. Power
1.85
Percentage of Occurrences
RL = 1 kȍ
FIGURE 2-23:
Supply Voltage.
1.8
FIGURE 2-20:
Output Voltage Headroom
vs. Output Current.
60
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Power Supply Voltage (V)
10
1.75
1
Output Current Magnitude (mA)
1.7
0.1
1.6
Output Voltage Headroom (mV)
20
125
1000
Output Voltage Headroom (mV)
40
-80
0
25
50
75
100
Ambient Temperature (°C)
FIGURE 2-19:
Input Common-Mode
Voltage Headroom (Range) vs. Ambient
Temperature.
80
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
60
1.65
Common-Mode Input Voltage
Headroom (V)
0.5
Output Short Circuit Current
(mA)
2.2
POR Trip Voltage (V)
FIGURE 2-24:
Voltage.
Power-On Reset Trip
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
2.2
POR Trip Voltage (V)
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
FIGURE 2-25:
Power-On Reset Voltage vs.
Ambient Temperature.
 2015-2016 Microchip Technology Inc.
DS20005434B-page 11
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
Frequency Response
Representative Part
PSRR+
100
80
CMRR
PSRR-
60
40
20
0
100
1k
10k
100k
Frequency (Hz)
FIGURE 2-26:
Frequency.
1M
60
20
-150
Open-Loop Gain
10
-180
0
-210
-240
VDD = 2.4V
CL = 30 pF
-20
1.E+04
10k
-270
100k
1.E+05
1.E+06
1M
f (Hz)
-90
-120
30
-150
20
Open-Loop Gain
10
-180
0
-210
-240
VDD = 5.5V
CL = 30 pF
-270
1.E+06
1M
f (Hz)
1.E+07
10M
FIGURE 2-28:
Open-Loop Gain vs.
Frequency with VDD = 5.5V.
DS20005434B-page 12
GBWP
8
30
VDD = 2.4V
20
7
10
6
-25
0
25
50
75
100
Ambient Temperature (°C)
125
90
GBWP
10
80
8
70
6
60
4
50
PM
VDD = 5.5V
VDD = 2.4V
2
40
0
30
0
1
2
3
4
5
6
14
Open-Loop Phase (°)
Open-Loop Gain (dB)
Open-Loop Phase
1.E+05
100k
40
9
FIGURE 2-30:
Gain Bandwidth Product
and Phase Margin vs. Common-Mode Input
Voltage.
-60
50
-20
1.E+04
10k
50
Common Mode Input Voltage (V)
-30
60
-10
10
-1
FIGURE 2-27:
Open-Loop Gain vs.
Frequency with VDD = 2.4V.
40
60
10M
1.E+07
Gain Bandwidth Product (MHz)
-10
Gain Bandwidth Product (MHz)
-120
Open-Loop Phase (°)
Open-Loop Gain (dB)
-90
30
11
12
-60
Open-Loop Phase
40
70
PM
FIGURE 2-29:
Gain Bandwidth Product
and Phase Margin vs. Ambient Temperature.
-30
50
12
-50
10M
CMRR and PSRR vs.
VDD = 5.5V
Phase Margin (º)
CMRR, PSRR (dB)
120
80
13
Phase Margin (°)
Gain Bandwidth Product (MHz)
140
90
GBWP
12
80
PM
10
70
8
60
VDD = 5.5V
6
50
VDD = 2.4V
4
Phase Margin (º)
2.3
40
2
30
0
1
2
3
4
5
6
Output Voltage (V)
FIGURE 2-31:
Gain Bandwidth Product
and Phase Margin vs. Output Voltage.
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
1000
100
10
GN :
101 V/V
11 V/V
1 V/V
1
EMIRR (dB)
Closed Loop Output
Impedance (Ω)
VDD = 2.4V
0.1
1k
10k
100k
1M
10M
120
110
100
90
80
70
60
50
40
30
20
10
10
10M
VPK = 100 mV
VDD = 5.5V
100
100M
Frequency (Hz)
1000
1G
10000
10G
Frequency (Hz)
FIGURE 2-35:
FIGURE 2-32:
Closed-Loop Output
Impedance vs. Frequency with VDD = 2.2V.
EMIRR vs. Frequency.
120
1000
VDD = 5.5V
VDD = 5.5V
80
EMIRR (dB)
Closed Loop Output
Impedance (Ω)
100
100
GN :
101 V/V
11 V/V
1 V/V
10
60
40
EMIRR at 2400 MHz
EMIRR at 1800 MHz
EMIRR at 900 MHz
EMIRR at 400 MHz
1
20
0.1
1.0E+03
1.0E+04
1k
10k
1.0E+05
100k
1.0E+06
0
0.01
1.0E+07
1M
10M
Frequency (Hz)
FIGURE 2-33:
Closed-Loop Output
Impedance vs. Frequency with VDD = 5.5V.
VDD = 5.5V
VDD = 2.4V
1
0.1
100k
FIGURE 2-36:
Channel-to-Channel Separation
RTI (dB)
Output Voltage Swing (VP-P)
10
10k
1M
10M
Frequency (Hz)
100M
FIGURE 2-34:
Maximum Output Voltage
Swing vs. Frequency.
 2015-2016 Microchip Technology Inc.
0.10
1.00
10.00
RF Input Peak Voltage (Vp)
EMIRR vs. Input Voltage.
150
140
130
VDD = 5.5V
120
110
VDD = 2.4V
100
90
80
1.E+03
1k
10k
100k
1.E+04
1.E+05
Frequency (Hz)
1M
1.E+06
FIGURE 2-37:
Channel-to Channel
Separation vs. Frequency.
DS20005434B-page 13
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
Input Noise and Distortion
1000
VDD = 5.5V, red
VDD = 2.4V, blue
100
100
eni
10
10
Eni (0 Hz to f)
1.E+3
1m
G = 11 V/V
VDD tone = 100 mVPK, f = 1 kHz
IMD Spectrum, RTI (VPK)
Input Noise Voltage Density;
eni (nV/¥Hz)
1000
Integrated Input Noise Voltage;
Eni (µVP-P)
2.4
1.E+2
100μ
DC tone
FIGURE 2-38:
Input Noise Voltage Density
and Integrated Input Noise Voltage vs. Frequency.
Residual
1 kHz tone
1.E+1
10μ
1.E+0
1μ
1.E-1
100n
ǻf = 64 Hz
ǻf = 2 Hz
10n
1.E-2
1
1.E+0
1
1
1
10
100 1.E+3
1k
10k 1.E+5
100k
1.E+0
1.E+1
1.E+2
1.E+4
Frequency (Hz)
VDD = 2.4V
VDD = 5.5V
10
1.E+1
100
1k
1.E+2
1.E+3
Frequency (Hz)
10k
1.E+4
100k
1.E+5
FIGURE 2-41:
Intermodulation Distortion
vs. Frequency with VDD Disturbance
(see Figure 1-6).
VDD = 2.4V
f < 2 kHz
25
20
VDD = 2.4V
15
NPBW = 10 Hz
Input Noise Voltage; eni(t)
(0.1 µV/div)
Input Noise Voltage Density
(nV/¥Hz)
30
10
VDD = 5.5V
5
0
-0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
NPBW = 1 Hz
0
10
20
30
Common Mode Input Voltage (V)
VDD = 2.4V
VDD = 5.5V
1.E+2
100μ
DC tone
Residual
1 kHz tone
(due to resistor
mismatch)
1.E+1
10μ
1.E+0
1μ
100n
1.E-1
60
70
80
90
100
FIGURE 2-42:
Input Noise vs. Time with
1 Hz and 10 Hz Filters and VDD = 2.4V.
VDD = 5.5V
Input Noise Voltage; eni(t)
(0.1 µV/div)
IMD Spectrum, RTI (VPK)
G = 11 V/V
VCM tone = 100 mVPK, f = 1 kHz
50
Time (s)
FIGURE 2-39:
Input Noise Voltage Density
vs. Input Common-Mode Voltage.
1.E+3
1m
40
NPBW = 10 Hz
NPBW = 1 Hz
ǻf = 64 Hz
ǻf = 2 Hz
0
10n
1.E-2
1
10
100
1k
100
1000
Frequency (Hz)
10k
10000
100k
100000
FIGURE 2-40:
Intermodulation Distortion
vs. Frequency with VCM Disturbance (see
Figure 1-6).
DS20005434B-page 14
10
20
30
40
50
60
70
80
90
100
Time (s)
FIGURE 2-43:
Input Noise vs. Time with
1 Hz and 10 Hz Filters and VDD = 5.5V.
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
Input Offset Voltage (µV)
45
40
35
30
25
20
15
10
5
0
-5
-10
100
80
60
40
20
0
-20
-40
-60
-80
-100
-120
TPCB
VDD = 5.5V
VDD = 2.4V
VOS
Temperature is increased
using a heat gun for 5 seconds
Output Voltage (20mV/div)
Time Response
PCB Temperature (ºC)
2.5
VIN
VOUT
VDD = 5.5V
G = +1 V/V
0 10 20 30 40 50 60 70 80 90 100 110 120
0
0.5
1
1.5
2
Time (s)
FIGURE 2-47:
Step Response.
FIGURE 2-44:
Input Offset Voltage vs.
Time with Temperature Change.
6
5
5
VDD
4
20
VDD = 5.5V
G = +1 V/V
15
10
3
2
POR Trip Point
1
5
VOS
0
0
-5
-1
0
1
2
3
4
5
6
7
8
9
Output Voltage (V)
25
6
Power Supply Voltage (V)
Input Offset Voltage (mV)
30
2.5 3 3.5
Time (µs)
4
4.5
5
Noninverting Small Signal
VOUT
4
VIN
3
VDD = 5.5 V
G = +1 V/V
2
1
0
0
0.5
1
1.5
2
Time (µs)
10
2.5
3
3.5
4
Time (ms)
FIGURE 2-45:
Input Offset Voltage vs.
Time at Power-Up.
FIGURE 2-48:
Step Response.
Noninverting Large Signal
VDD = 5.5 V
G = +1 V/V
5
4
3
2
VOUT
1
0
VIN
-1
Output Voltage (20 mV/div)
Input, Output Voltages (V)
6
VIN
VDD = 5.5 V
G = -1 V/V
VOUT
0
0.5
Time (1 µs/div)
FIGURE 2-46:
The MCP6V91/1U/2/4
Family Shows No Input Phase Reversal with
Overdrive.
 2015-2016 Microchip Technology Inc.
1
1.5
2
2.5
3
3.5
4
4.5
5
Time (µs)
FIGURE 2-49:
Response.
Inverting Small Signal Step
DS20005434B-page 15
MCP6V91/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF.
6
Overdrive Recovery Time (s)
1m
Output Voltage (V)
5
VDD = 5.5 V
G = -1 V/V
4
3
2
VOUT
1
VIN
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Time (µs)
FIGURE 2-50:
Response.
Slew Rate (V/µs)
VDD = 2.4V
100µ
tODR, low
VDD = 5.5V
10µ
tODR, high
1µ
1
10
100
1000
Inverting Gain Magnitude (V/V)
Inverting Large Signal Step
FIGURE 2-53:
Output Overdrive Recovery
Time vs. Inverting Gain.
Falling Edge, VDD = 2.4V
15.0
13.0
0.5V Input Overdrive
Falling Edge, VDD = 5.5V
11.0
Rising Edge, VDD = 2.4V
9.0
7.0
Rising Edge, VDD = 5.5V
5.0
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
FIGURE 2-51:
Temperature.
Slew Rate vs. Ambient
7
VDD = 5.5 V
G = -10 V/V
0.5V Overdrive
Output Voltage (V)
6
5
4
VOUT
GVIN
3
2
1
GVIN
VOUT
0
-1
Time (50 us/div)
FIGURE 2-52:
Output Overdrive Recovery
vs. Time with G = -10 V/V.
DS20005434B-page 16
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP6V91 MCP6V91U
MCP6V92
MCP6V94
Symbol
Description
SOT-23
SOT-23,
SC70
2X3 TDFN
MSOP
TSSOP
1
4
1
1
1
4
3
2
2
3
1
3
3
5
5
8
8
4
VDD
—
—
5
5
5
VINB+
Noninverting Input (Op Amp B)
3.1
2
VIN–
Inverting Input
3
VIN+
Noninverting Input
Positive Power Supply
—
—
6
6
6
VINB-
Inverting Input (Op Amp B)
—
7
7
7
VOUTB
Output (Op Amp B)
—
—
—
—
8
VOUTC
Output (Op Amp C)
—
—
—
—
9
VINC-
Inverting Input (Op Amp C)
—
—
—
—
10
VINC+
2
2
4
4
11
VSS
—
—
—
—
12
VIND+
Noninverting Input (Op Amp D)
—
—
—
—
13
VIND-
Inverting Input (Op Amp D)
—
—
—
—
14
VOUTD
—
—
9
—
—
EP
Analog Outputs (VOUT, VOUTA,
VOUTB, VOUTC, VOUTD)
Analog Inputs (VIN+, VIN-, VINB+,
VINB-, VINC-, VINC+, VIND-, VIND+)
The noninverting and inverting inputs (VIN+, VIN–, …)
are high-impedance CMOS inputs with low bias
currents.
3.3
Output
—
The analog output pins (VOUT) are low-impedance
voltage sources.
3.2
VOUT
3.4
Noninverting Input (Op Amp C)
Negative Power Supply
Output (Op Amp D)
Exposed Thermal Pad (EP);
must be connected to VSS
Exposed Thermal Pad (EP)
There is an internal connection between the exposed
thermal pad (EP) and the VSS pin; they must be
connected to the same potential on the printed circuit
board (PCB).
This pad can be connected to a PCB ground plane to
provide a larger heat sink. This improves the package
thermal resistance (θJA).
Power Supply Pins (VDD, VSS)
The positive power supply (VDD) is 2.4V to 5.5V higher
than the negative power supply (VSS). For normal
operation, the other pins are between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
 2015-2016 Microchip Technology Inc.
DS20005434B-page 17
MCP6V91/1U/2/4
4.0
APPLICATIONS
The MCP6V91/1U/2/4 family of zero-drift op amps is
manufactured using Microchip’s state-of-the-art CMOS
process. It is designed for precision applications with
requirements for small packages and low power. Its low
supply voltage and low quiescent current make the
MCP6V91/1U/2/4 devices ideal for battery-powered
applications.
4.1
Overview of Zero-Drift Operation
Figure 4-1 shows a simplified diagram of the
MCP6V91/1U/2/4 zero-drift op amp. This diagram will
be used to explain how slow voltage errors are reduced
in this architecture (much better VOS, VOS/TA (TC1),
CMRR, PSRR, AOL and 1/f noise).
VREF
Output
Buffer
VOUT
+
-
VIN–
+
-
Main
Amp.
+
-
The output buffer drives external loads at the VOUT pin
(VREF is an internal reference voltage).
The oscillator runs at fOSC1 = 200 kHz. Its output is
divided by two, to produce the chopping clock rate of
fCHOP = 100 kHz.
The internal Power-on Reset (POR) starts the part in a
known good state, protecting against power supply
brown-outs.
The digital control block controls switching and POR
events.
4.1.2
CHOPPING ACTION
Figure 4-2 shows the amplifier connections for the first
phase of the chopping clock and Figure 4-3 shows the
connections for the second phase. Its slow voltage
errors alternate in polarity, making the average error
small.
VIN+
+
VIN+
The low-pass filter reduces high-frequency content,
including harmonics of the chopping clock.
VIN–
NC
+
+
-
Main
Amp.
+
-
Low-Pass
Filter
Low-Pass
Filter
Chopper
Input
Switches
+ Aux. +
- Amp. -
NC
+ Aux. +
- Amp. -
Chopper
Output
Switches
FIGURE 4-2:
First Chopping Clock Phase;
Equivalent Amplifier Diagram.
Oscillator
Digital Control
POR
FIGURE 4-1:
Simplified Zero-Drift Op
Amp Functional Diagram.
4.1.1
BUILDING BLOCKS
The main amplifier is designed for high gain and
bandwidth, with a differential topology. Its main input
pair (+ and - pins at the top left) is used for the higher
frequency portion of the input signal. Its auxiliary input
pair (+ and - pins at the bottom left) is used for the
low-frequency portion of the input signal and corrects
the op amp’s input offset voltage. Both inputs are
added together internally.
The auxiliary amplifier, chopper input switches and
chopper output switches provide a high DC gain to the
input signal. DC errors are modulated to higher
frequencies, while white noise is modulated to a low
frequency.
DS20005434B-page 18
VIN+
VIN–
+
+
-
Main
Amp.
+
-
NC
Low-Pass
Filter
+ Aux. +
- Amp. -
FIGURE 4-3:
Second Chopping Clock
Phase; Equivalent Amplifier Diagram.
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
4.1.3
INTERMODULATION DISTORTION
(IMD)
These op amps will show intermodulation distortion
(IMD) products when an AC signal is present.
The signal and clock can be decomposed into sine
wave tones (Fourier series components). These tones
interact with the zero-drift circuitry’s nonlinear response
to produce IMD tones at sum and difference
frequencies. Each of the square wave clock’s
harmonics has a series of IMD tones centered on it
(see Figures 2-40 and 2-41).
4.2
4.2.1
Other Functional Blocks
RAIL-TO-RAIL INPUTS
The input stage of the MCP6V91/1U/2/4 op amps uses
two differential CMOS input stages in parallel. One
operates at low common-mode input voltage (VCM,
which is approximately equal to VIN+ and VIN- in normal
operation), and the other operates at high VCM. With
this topology, the input operates with VCM up to
VDD + 0.3V and down to VSS – 0.2V, at +25°C (see
Figure 2-19). The input offset voltage (VOS) is
measured at VCM = VSS – 0.2V and VDD + 0.3V to
ensure proper operation.
4.2.1.1
Phase Reversal
The input devices are designed to not exhibit phase
inversion when the input pins exceed the supply
voltages. Figure 2-46 shows an input voltage
exceeding both supplies with no phase inversion.
4.2.1.2
VDD Bond
Pad
VIN+ Bond
Pad
VSS Bond
Pad
FIGURE 4-4:
Structures.
The ESD protection on the inputs can be depicted as
shown in Figure 4-4. This structure was chosen to
protect the input transistors against many (but not all)
overvoltage conditions and to minimize input bias
current (IB).
 2015-2016 Microchip Technology Inc.
Simplified Analog Input ESD
The input ESD diodes clamp the inputs when they try to
go more than one diode drop below VSS. They also
clamp any voltages well above VDD; their breakdown
voltage is high enough to allow normal operation but not
low enough to protect against slow overvoltage (beyond
VDD) events. Very fast ESD events (that meet the
specification) are limited so that damage does not occur.
In some applications, it may be necessary to prevent
excessive voltages from reaching the op amp inputs;
Figure 4-5 shows one approach to protecting these
inputs. D1 and D2 may be small signal silicon diodes,
Schottky diodes for lower clamping voltages or
diode-connected FETs for low leakage.
VDD
U1
D1
Input Voltage Limits
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the voltages at
the input pins (see Section 1.1 “Absolute Maximum
Ratings †”). This requirement is independent of the
input current limits discussed later on.
Bond V –
IN
Pad
Input
Stage
MCP6V9X
V1
+
D2
V2
-
VOUT
FIGURE 4-5:
Protecting the Analog Inputs
Against High Voltages.
DS20005434B-page 19
MCP6V91/1U/2/4
4.2.1.3
4.3
Input Current Limits
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the currents
into the input pins (see Section 1.1 “Absolute
Maximum Ratings †”). This requirement is
independent of the voltage limits discussed previously.
Figure 4-6 shows one approach to protecting these
inputs. The R1 and R2 resistors limit the possible
current in or out of the input pins (and into D1 and D2).
The diode currents will dump onto VDD.
V1
V2
R1
MCP6V9X
D2
Table 1-1 gives both the linear and quadratic
temperature coefficients (TC1 and TC2) of input offset
voltage. The input offset voltage, at any temperature in
the specified range, can be calculated as follows:
EQUATION 4-1:
2
T
=
TA – 25°C
VOS(TA)
=
Input offset voltage at TA
VOS
=
Input offset voltage at +25°C
TC1
=
Linear temperature coefficient
TC2
=
Quadratic temperature coefficient
VOUT
-
R2
VSS – min(V1, V2)
2 mA
max(V1, V2) – VDD
min(R1, R2) >
2 mA
min(R1, R2) >
FIGURE 4-6:
Protecting the Analog Inputs
Against High Currents.
It is also possible to connect the diodes to the left of the
R1 and R2 resistors. In this case, the currents through
the D1 and D2 diodes need to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN-) should be very small.
A significant amount of current can flow out of the
inputs (through the ESD diodes) when the commonmode input voltage (VCM) is below ground (VSS) (see
Figure 2-18).
4.2.2
INPUT OFFSET VOLTAGE OVER
TEMPERATURE
Where:
U1
+
4.3.1
V OS  T A  = VOS + TC 1  T + TC2  T
VDD
D1
Application Tips
RAIL-TO-RAIL OUTPUT
The output voltage range of the MCP6V91/1U/2/4
zero-drift op amps is VDD – 9 mV (typical) and
VSS + 7 mV (typical) when RL = 10 kΩ is connected to
VDD/2 and VDD = 5.5V. Refer to Figures 2-20 and 2-21
for more information.
This op amp is designed to drive light loads; use
another amplifier to buffer the output from heavy loads.
4.3.2
DC GAIN PLOTS
Figures 2-10 to 2-12 are histograms of the reciprocals
(in units of µV/V) of CMRR, PSRR and AOL,
respectively. They represent the change in input offset
voltage (VOS) with a change in common-mode input
voltage (VCM), power supply voltage (VDD) and output
voltage (VOUT). The histograms are based on data
taken with the production test equipment and the
results reflect the trade-off between accuracy and test
time. The actual performance of the devices is typically
higher than shown in Figures 2-10 to 2-12.
The 1/AOL histogram is centered near 0 µV/V because
the measurements are dominated by the op amp’s
input noise. The negative values shown represent
noise and tester limitations, not unstable behavior.
Production tests make multiple VOS measurements,
which validates an op amp's stability; an unstable part
would show greater VOS variability or the output would
stick at one of the supply rails.
4.3.3
OFFSET AT POWER-UP
When these parts power up, the input offset (VOS) starts
at its uncorrected value (usually less than ±5 mV).
Circuits with high DC gain can cause the output to reach
one of the two rails. In this case, the time to a valid
output is delayed by an output overdrive time (like tODR)
in addition to the start-up time (like tSTR).
It can be simple to avoid this extra start-up time.
Reducing the gain is one method. Adding a capacitor
across the feedback resistor (RF) is another method.
DS20005434B-page 20
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
SOURCE RESISTANCES
The input bias currents have two significant
components: switching glitches that dominate at room
temperature and below, and input ESD diode leakage
currents that dominate at +85°C and above.
Make the resistances seen by the inputs small and
equal. This minimizes the output offset caused by the
input bias currents.
The inputs should see a resistance on the order of 10Ω
to 1 kΩ at high frequencies (i.e., above 1 MHz). This
helps minimize the impact of switching glitches, which
are very fast, on overall performance. In some cases, it
may be necessary to add resistors in series with the
inputs to achieve this improvement in performance.
Small input resistances may be needed for high gains.
Without them, parasitic capacitances might cause
positive feedback and instability.
4.3.5
SOURCE CAPACITANCE
The capacitances seen by the two inputs should be
small. Large input capacitances and source
resistances, together with high gain, can lead to
positive feedback and instability.
4.3.6
CAPACITIVE LOADS
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. These zero-drift op amps have a different
output impedance than most op amps, due to their
unique topology.
When driving a capacitive load with these op amps, a
series resistor at the output (RISO in Figure 4-7)
improves the feedback loop’s phase margin (stability)
by making the output load resistive at higher
frequencies. The bandwidth will be generally lower
than the bandwidth with no capacitive load.
GN is the circuit’s noise gain. For noninverting gains,
GN and the Signal Gain are equal. For inverting gains,
GN is 1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
1000
Recommended R ISO (Ω)
4.3.4
VDD = 5.5 V
RL = 10 kȍ
100
GN:
1 V/V
10 V/V
100 V/V
10
1
1p
10p
10n
100n
1µ
After selecting RISO for your circuit, double check the
resulting frequency response peaking and step
response overshoot. Modify the RISO value until the
response is reasonable. Bench evaluation is helpful.
4.3.7
STABILIZING OUTPUT LOADS
This family of zero-drift op amps has an output
impedance that has a double zero when the gain is low
(see Figures 2-32 and 2-33). This can cause a large
phase shift in feedback networks that have lowimpedance near the part’s bandwidth. This large phase
shift can cause stability problems.
Figure 4-9 shows that the load on the output is
(RL + RISO)||(RF + RG), where RISO is before the load
(like Figure 4-7). This load needs to be large enough to
maintain stability; it should be at least 10 kΩ.
RG
RF
RISO
VOUT
-
RL
CL
+
U1
VOUT
+
1n
FIGURE 4-8:
Recommended RISO Values
for Capacitive Loads.
RISO
-
100p
Normalized Load Capacitance; CL/√
√GN (F)
CL
MCP6V9X
FIGURE 4-9:
Output Load.
U1
MCP6V9X
FIGURE 4-7:
Output Resistor, RISO,
Stabilizes Capacitive Loads.
Figure 4-8 gives recommended RISO values for different
capacitive loads and gains. The x-axis is the load
capacitance (CL). The y-axis is the resistance (RISO).
 2015-2016 Microchip Technology Inc.
DS20005434B-page 21
MCP6V91/1U/2/4
4.3.8
GAIN PEAKING
4.3.9
Figure 4-10 shows an op amp circuit that represents
noninverting amplifiers (VM is a DC voltage and VP is
the input) or inverting amplifiers (VP is a DC voltage
and VM is the input). The CN and CG capacitances
represent the total capacitance at the input pins; they
include the op amp’s common-mode input capacitance
(CCM), board parasitic capacitance and any capacitor
placed in parallel. The CFP capacitance represents the
parasitic capacitance coupling the output and
noninverting input pins.
RN
VP
CN
CFP
U1
+
MCP6V9X
-
VM
RG
FIGURE 4-10:
Capacitance.
CG
Reduce undesired noise and signals with:
• Low-bandwidth signal filters:
- Minimize random analog noise
- Reduce interfering signals
• Good Printed Circuit Board (PCB) layout
techniques:
- Minimize crosstalk
- Minimize parasitic capacitances and
inductances that interact with fast-switching
edges
• Good power supply design:
- Isolation from other parts
- Filtering of interference on supply line(s)
4.3.10
RF
VOUT
Amplifier with Parasitic
CG acts in parallel with RG (except for a gain of +1 V/V),
which causes an increase in gain at high frequencies.
CG also reduces the phase margin of the feedback
loop, which becomes less stable. This effect can be
reduced by reducing either CG or RF||RG.
CN and RN form a low-pass filter that affects the signal
at VP. This filter has a single real pole at 1/(2πRNCN).
The largest value of RF that should be used depends
on noise gain (see GN in Section 4.3.6 “Capacitive
Loads”), CG and the open-loop gain’s phase shift. An
approximate limit for RF is:
EQUATION 4-2:
3.5 pF
R F  10 k   ---------------  G N2
CG
Some applications may modify these values to reduce
either output loading or gain peaking (step-response
overshoot).
At high gains, RN needs to be small in order to prevent
positive feedback and oscillations. Large CN values
can also help.
REDUCING UNDESIRED NOISE
AND SIGNALS
SUPPLY BYPASSING AND
FILTERING
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
of the pin for good high-frequency performance.
These parts also need a bulk capacitor (i.e., 1 µF or
larger) within 100 mm to provide large, slow currents.
This bulk capacitor can be shared with other low-noise
analog parts.
In some cases, high-frequency power supply noise
(e.g., switched mode power supplies) may cause
undue intermodulation distortion with a DC offset shift;
this noise needs to be filtered. Adding a small resistor
into the supply connection can be helpful.
4.3.11
PCB DESIGN FOR DC PRECISION
In order to achieve DC precision on the order of ±1 µV,
many physical errors need to be minimized. The design
of the PCB, the wiring and the thermal environment
have a strong impact on the precision achieved. A poor
PCB design can easily be more than 100 times worse
than the MCP6V91/1U/2/4 op amps’ minimum and
maximum specifications.
4.3.11.1
PCB Layout
Any time two dissimilar metals are joined together, a
temperature-dependent voltage appears across the
junction (the Seebeck or thermojunction effect). This
effect is used in thermocouples to measure
temperature. The following are examples of
thermojunctions on a PCB:
• Components (resistors, op amps, …) soldered to
a copper pad
• Wires mechanically attached to the PCB
• Jumpers
• Solder joints
• PCB vias
DS20005434B-page 22
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Typical thermojunctions have temperature-to-voltage
conversion coefficients of 1 to 100 µV/°C (sometimes
higher).
4.4
Microchip’s AN1258 “Op Amp Precision Design: PCB
Layout Techniques” (DS01258) contains in-depth
information on PCB layout techniques that minimize
thermojunction effects. It also discusses other effects,
such as crosstalk, impedances, mechanical stresses
and humidity.
Many sensors are configured as Wheatstone bridges.
Strain gauges and pressure sensors are two common
examples. These signals can be small and the
common-mode noise large. Amplifier designs with high
differential gain are desirable.
4.3.11.2
Crosstalk
DC crosstalk causes offsets that appear as a larger
input offset voltage. Common causes include:
Typical Applications
4.4.1
WHEATSTONE BRIDGE
Figure 4-11 shows how to interface to a Wheatstone
bridge with a minimum of components. Because the
circuit is not symmetric, the ADC input is single-ended
and there is a minimum of filtering; the CMRR is good
enough for moderate common-mode noise.
• Common-mode noise (remote sensors)
• Ground loops (current return paths)
• Power supply coupling
R R
Interference from the mains (usually 50 Hz or 60 Hz)
and other AC sources can also affect the DC
performance. Nonlinear distortion can convert these
signals to multiple tones, including a DC shift in voltage.
When the signal is sampled by an ADC, these AC
signals can also be aliased to DC, causing an apparent
shift in offset.
FIGURE 4-11:
To reduce interference:
4.4.2
-
Keep traces and wires as short as possible
Use shielding
Use ground plane (at least a star ground)
Place the input signal source near the DUT
Use good PCB layout techniques
Use a separate power supply filter (bypass
capacitors) for these zero-drift op amps
4.3.11.3
Miscellaneous Effects
R R
0.2R
0.2R
MCP6V91
VDD
RW
 2015-2016 Microchip Technology Inc.
U1
+
The ratiometric circuit in Figure 4-12 conditions a
two-wire RTD for applications with a limited
temperature range. U1 acts as a difference amplifier
with a low-frequency pole. The sensor’s wiring
resistance (RW) is corrected in firmware. Failure (open)
of the RTD is detected by an out-of-range voltage.
Make the (trace) capacitances seen by the input pins
small and equal. This is helpful in minimizing switching
glitch-induced offset voltages.
Humidity can cause electrochemical potential voltages
to appear in a circuit. Proper PCB cleaning helps, as
does the use of encapsulants.
+ ADC
-
100R
RESISTANCE TEMPERATURE
DETECTOR (RTD) SENSOR
RT
RN
34.8 kΩ 10.0 kΩ
Mechanical stresses can make some capacitor types
(such as some ceramics) output small voltages. Use
more appropriate capacitor types in the signal path and
minimize mechanical stresses and vibration.
VDD
Simple Design.
Keep the resistances seen by the input pins as small
and as near to equal as possible, to minimize bias
current-related offsets.
Bending a coax cable with a radius that is too small
causes a small voltage drop to appear on the center
conductor (the triboelectric effect). Make sure the
bending radius is large enough to keep the conductors
and insulation in full contact.
1 kΩ
0.01C
VDD
10 nF
RF
2.00 MΩ
U1 +
RRTD
100Ω MCP6V91 RG
RF
RW
10.0 kΩ 2.00 MΩ
RB
4.99 kΩ
1.0 µF
10 nF
1.00 kΩ
100 nF
VDD
+ ADC
-
FIGURE 4-12:
RTD Sensor.
DS20005434B-page 23
MCP6V91/1U/2/4
4.4.3
OFFSET VOLTAGE CORRECTION
Figure 4-13 shows MCP6V91 (U2) correcting the input
offset voltage of another op amp (U1). R2 and C2
integrate the offset error seen at U1’s input. The
integration needs to be slow enough to be stable (with
the feedback provided by R1 and R3). R4 and R5
attenuate the integrator’s output. This shifts the
integrator pole down in frequency.
R1
VIN
R3
R2
R2
VDD/2
R4
C2
-
+
R5
+
VOUT
U1
MCP6XXX
U2
VDD/2
MCP6V91
FIGURE 4-13:
4.4.4
Offset Correction.
PRECISION COMPARATOR
Use high gain before a comparator to improve the
latter’s performance. Do not use MCP6V91/1U/2/4 as
a comparator by itself; the VOS correction circuitry does
not operate properly without a feedback loop.
U1
VIN
R1
MCP6V91
+
-
R2
VDD/2
R3
R4
R5
VOUT
+
-
U2
MCP6541
FIGURE 4-14:
DS20005434B-page 24
Precision Comparator.
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
NOTES:
 2015-2016 Microchip Technology Inc.
DS20005434B-page 25
MCP6V91/1U/2/4
5.0
DESIGN AIDS
Microchip provides the basic design aids needed for
the MCP6V91/1U/2/4 family of op amps.
5.1
FilterLab® Software
5.4
Application Notes
The following Microchip Application Notes are
available on the Microchip web site at www.microchip.
com/appnotes and are recommended as supplemental
reference resources.
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter (using op
amps) design. Available at no cost from the Microchip
web site at www.microchip.com/filterlab, the FilterLab
design tool provides full schematic diagrams of the filter
circuit with component values. It also outputs the filter
circuit in SPICE format, which can be used with the
macro model to simulate actual filter performance.
ADN003: “Select the Right Operational Amplifier for
your Filtering Circuits” (DS21821)
5.2
AN990: “Analog Sensor Conditioning Circuits –
An Overview” (DS00990)
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps efficiently identify
Microchip devices that fit a particular design
requirement. Available at no cost from the Microchip
web site at www.microchip.com/maps, MAPS is an
overall selection tool for Microchip’s product portfolio
that includes Analog, Memory, MCUs and DSCs. Using
this tool, a customer can define a filter to sort features
for a parametric search of devices and export
side-by-side technical comparison reports. Helpful links
are also provided for data sheets, purchase and
sampling of Microchip parts.
5.3
Analog Demonstration and
Evaluation Boards
AN722: “Operational Amplifier Topologies and DC
Specifications” (DS00722)
AN723: “Operational Amplifier AC Specifications and
Applications” (DS00723)
AN884: “Driving Capacitive Loads With Op Amps”
(DS00884)
AN1177: “Op Amp Precision Design: DC Errors”
(DS01177)
AN1228: “Op Amp Precision Design: Random Noise”
(DS01228)
AN1258: “Op Amp Precision Design: PCB Layout
Techniques” (DS01258)
AN1767:
“Solutions
for
Radio
Frequency
Electromagnetic Interference in Amplifier Circuits”
(DS00001767)
These Application Notes and others are listed in the
design guide:
“Signal Chain Design Guide” (DS21825)
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help customers achieve faster time to
market. For a complete listing of these boards and their
corresponding user’s guides and technical information,
visit
the
Microchip
web
site
at
www.microchip.com/analog tools.
Some boards that are especially useful are:
• MCP6V01 Thermocouple Auto-Zeroed Reference
Design (MCP6V01RD-TCPL)
• MCP6XXX Amplifier Evaluation Board 1
(DS51667)
• MCP6XXX Amplifier Evaluation Board 2
(DS51668)
• MCP6XXX Amplifier Evaluation Board 3
(DS51673)
• MCP6XXX Amplifier Evaluation Board 4
(DS51681)
• Active Filter Demo Board Kit User’s Guide
(DS51614)
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board
(SOIC8EV)
• 14-Pin SOIC/TSSOP/DIP Evaluation Board
(SOIC14EV)
DS20005434B-page 26
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
NOTES:
 2015-2016 Microchip Technology Inc.
DS20005434B-page 27
MCP6V91/1U/2/4
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SC70 (MCP6V91U)
Example
Device
MCP6V91UT-E/LTY
Code
DWNN
5-Lead SOT-23 (MCP6V91, MCP6V91U)
XXXXY
WWNNN
Device
DW56
Example
Code
AABJ5
MCP6V91T-E/OT
AABJY
10256
MCP6V91UT-E/OT
AABKY
8-Lead MSOP (MCP6V92)
Example
6V92
544256
8-Lead TDFN (MCP6V92)
Example
Device
MCP6V92T-E/MNY
Note:
DS20005434B-page 28
Code
ACY
Applies to 8-Lead 2x3 TDFN.
ACY
544
25
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
14-Lead TSSOP (MCP6V94)
XXXXXXXX
YYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example
MCP6V94
1544
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2015-2016 Microchip Technology Inc.
DS20005434B-page 29
MCP6V91/1U/2/4
5-Lead Plastic Small Outine Transistor (LTY) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
b
3
1
2
E1
E
4
5
e
A
e
A2
c
A1
L
*
,
.1
2
+,,+%-
+.
.
./
0
!
2
/'4
5
3!"#
6
27%7
5
6
6
/'8
5
278
!
!
9!
/',
5
!
:
,
,
3
,%7
5
6
3
,8
1
!
6
!
"#$ "
%
&'
((
Microchip
Technology
Drawing
%
&
(
# C04-083B
;3"
DS20005434B-page 30
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
5-Lead Plastic Small Outine Transistor (LTY) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015-2016 Microchip Technology Inc.
DS20005434B-page 31
MCP6V91/1U/2/4
:
7(=
27
$>>(((
>7
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
*
,
.1
2
+,,+%-
+.
./
0
.
!
,2
<!"#
/,2
/'4
<
6
27%7
5<
6
9
6
!
/'8
6
9
278
9
6
5
/',
6
9
<"#
!
:
,
,
6
3
:
,
9!
6
5
:
?
6
9?
,%7
5
6
3
,8
1
6
!
!
"#$ "
%
&'
((
%
& ( # ;<"
DS20005434B-page 32
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015-2016 Microchip Technology Inc.
DS20005434B-page 33
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005434B-page 34
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015-2016 Microchip Technology Inc.
DS20005434B-page 35
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005434B-page 36
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
8-Lead Plastic Dual Flat, No Lead Package (MNY) – 2x3x0.75mm Body [TDFN]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
B
N
(DATUM A)
(DATUM B)
E
NOTE 1
2X
0.15 C
1
2
2X
0.15 C
TOP VIEW
0.10 C
C
(A3)
A
SEATING
PLANE
8X
0.08 C
A1
SIDE VIEW
0.10
C A B
D2
L
1
2
0.10
C A B
NOTE 1
E2
K
N
8X b
e
0.10
0.05
C A B
C
BOTTOM VIEW
Microchip Technology Drawing No. C04-129-MNY Rev D Sheet of 2
 2015-2016 Microchip Technology Inc.
DS20005434B-page 37
MCP6V91/1U/2/4
8-Lead Plastic Dual Flat, No Lead Package (MNY) – 2x3x0.75mm Body [TDFN]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
N
Number of Pins
e
Pitch
A
Overall Height
A1
Standoff
Contact Thickness
A3
D
Overall Length
E
Overall Width
Exposed Pad Length
D2
Exposed Pad Width
E2
b
Contact Width
L
Contact Length
Contact-to-Exposed Pad
K
MIN
0.70
0.00
1.45
1.60
0.20
0.25
0.20
MILLIMETERS
NOM
8
0.50 BSC
0.75
0.02
0.20 REF
2.00 BSC
3.00 BSC
0.25
0.30
-
MAX
0.80
0.05
1.65
1.80
0.30
0.45
-
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing No. C04-129-MNY Rev D Sheet 2 of 2
DS20005434B-page 38
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
8-Lead Plastic Dual Flat, No Lead Package (MNY) – 2x3x0.75mm Body [TDFN]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X2
EV
8
ØV
C
Y2
EV
Y1
1
2
SILK SCREEN
X1
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
Optional Center Pad Width
X2
Optional Center Pad Length
Y2
Contact Pad Spacing
C
Contact Pad Width (X8)
X1
Contact Pad Length (X8)
Y1
Thermal Via Diameter
V
Thermal Via Pitch
EV
MIN
MILLIMETERS
NOM
0.50 BSC
MAX
1.65
1.80
2.90
0.25
0.85
0.30
1.00
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
2. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during
reflow process
Microchip Technology Drawing No. C04-129-MNY Rev. A
 2015-2016 Microchip Technology Inc.
DS20005434B-page 39
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005434B-page 40
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015-2016 Microchip Technology Inc.
DS20005434B-page 41
MCP6V91/1U/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005434B-page 42
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
APPENDIX A:
REVISION HISTORY
Revision B (March 2016)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
Added new devices to the family: MCP6V92 and
MCP6V94, and related information throughout
the document.
Added Figure 2-37.
Updated Table 3-1 in Section 3.0, Pin Descriptions.
Added markings and specification drawings for
the new packages in Section 6.0, Packaging
Information.
Updated the Product Identification System
section with the new packages.
Corrected typographical errors.
Revision A (September 2015)
• Original release of this document.
 2015-2016 Microchip Technology Inc.
DS20005434B-page 43
MCP6V91/1U/2/4
NOTES:
DS20005434B-page 44
 2015-2016 Microchip Technology Inc.
MCP6V91/1U/2/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
[X](1)
–X
Device Tape and Reel Temperature
Range
Device:
/XX
Package
MCP6V91T:
Single Op Amp (Tape and Reel)
(SOT-23 only)
MCP6V91UT: Single Op Amp (Tape and Reel)
(SC-70, SOT-23)
MCP6V92:
Dual Op Amp (MSOP, 2x3 TDFN)
MCP6V92T: Dual Op Amp (Tape and Reel) (MSOP,
2x3 TDFN)
MCP6V94:
Quad Op Amp (TSSOP)
MCP6V94T: Quad Op Amp (Tape and Reel) (TSSOP)
Temperature Range:
E
Package:
LTY* = Plastic Small Outline Transistor, SC-70, 5-lead
OT
= Plastic Small Outline Transistor, SOT-23, 5-lead
MNY* = Plastic Dual Flat, No-Lead - 2×3×0.75 mm Body,
TDFN, 8-lead
MS
= Plastic Micro Small Outline, MSOP, 8-lead
ST
= Plastic Thin Shrink Small Outline - 4.4 mm Body,
TSSOP, 14-lead
*Y
= -40°C to +125°C (Extended)
= Nickel palladium gold manufacturing designator.
Only available on the SC70 and TDFN packages.
 2015-2016 Microchip Technology Inc.
Examples:
a)
MCP6V91T-E/OT:
a)
MCP6V91UT-E/LTY: Tape and Reel
Extended temperature,
5LD SC70 package
MCP6V91UT-E/OT: Tape and Reel,
Extended temperature,
5LD SOT-23 package
b)
a)
b)
c)
Tape and Reel,
Extended temperature,
5LD SOT-23 package
MCP6V92-E/MS:
Extended temperature,
8LD MSOP package
MCP6V92T-E/MS: Tape and Reel,
Extended temperature,
8LD MSOP package
MCP6V92T-E/MNY: Tape and Reel,
Extended temperature,
8LD 2x3 TDFN package
a)
MCP6V94-E/ST:
b)
MCP6V94T-E/ST:
Note 1:
Extended temperature,
14LD TSSOP package
Tape and Reel,
Extended temperature,
14LD TSSOP package
Tape and Reel identifier only appears in the
catalog part number description. This identifier is used for ordering purposes and is not
printed on the device package. Check with
your Microchip Sales Office for package
availability with the Tape and Reel option.
DS20005434B-page 45
MCP6V91/1U/2/4
NOTES:
DS20005434B-page 46
 2015-2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2015-2016 Microchip Technology Inc.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2015-2016, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0312-8
DS20005434B-page 47
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Germany - Dusseldorf
Tel: 49-2129-3766400
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
China - Dongguan
Tel: 86-769-8702-9880
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
Germany - Karlsruhe
Tel: 49-721-625370
India - Pune
Tel: 91-20-3019-1500
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Italy - Venice
Tel: 39-049-7625286
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-213-7828
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Poland - Warsaw
Tel: 48-22-3325737
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
07/14/15
DS20005434B-page 48
 2015-2016 Microchip Technology Inc.