US6X4 Transistors Low frequency amplifier (30V, 2A) US6X4 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. 370mV At lc=1.5A / lB=75mA ROHM : TUMT6 Abbreviated symbol : X04 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emiter-base voltage Collector current Power dissipation Junction temperature Range of storage temperautre Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 2 4 400 1.0 150 −55 to +150 Unit V V V A A∗1 mW ∗2 W ∗3 °C °C (6) (5) (4) (1) (2) (3) ∗1 Single pluse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended Land Pattern ∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltae Collector-emitter breakdown voltae Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 180 − 280 20 Max. − − − 100 100 370 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1.5A, IB=75mA VCE=2V, IC=200mA ∗ VCE=2V, IE=−200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz ∗ Pulsed Rev.B 1/2 US6X4 Transistors zPackaging specifications Package Type Taping TR Code Basic ordering unit (Pieces) 3000 US6X4 DC CURRENT GAIN : hFE Ta=25 C Ta=−25 C 100 10 0.001 0.01 0.1 1 10 10 Ta=−25 C Ta=25 C Ta=125 C 0.1 0.01 0.001 0.1 1 10 1000 TRANSITION FREQUENCY : fT (MHz) VCE=−2V Pulsed Ta=125 C 1 Ta=25 C Ta=−25 C 0.1 0.01 0.4 0.6 0.8 1 1.2 IC/IB=20/1 Pulsed Ta=−25 C Ta=25 C Ta=125 C 1 0.1 0.001 1.4 Ta=25 C VCE=−2V f= 100MHz 100 10 0.01 0.1 1 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 10 COLLECTOR CURRENT : IC (A) 0.01 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 0.2 IC/IB=20/1 Pulsed 1 COLLECTOR CURRENT : IC (A) 0.001 0 BASE SATURATION VOLTAGE : VBE(sat) (V) VCE=−2V Pulsed Ta=125 C 10 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves Fig.3 Base-emitter saturation voltage vs. collector current 1000 IC=0A f=1MHz Ta=25 C Cob 100 Cib 10 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output chapacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1