SANGDEST MICROELECTRONICS Technical Data Data Sheet N0086, Rev. - SB360 Green Products SB360 SCHOTTKY RECTIFIER Applications: • • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Features: • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability For use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB360 Technical Data Data Sheet N0086, Rev. - Green Products Marking Diagram: SSG XXXX SB360 Where XXXXX is YYWWL SB 3 60 SSG YY WW L = Device Type = Forward Current (3A) = Reverse Voltage (60V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SB360 DO-201AD (Pb-Free) 1250 pcs / Tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Condition - Max. 60 Units V Max. Average Forward IF(AV) 50% duty cycle @TC = 80 ℃ rectangular wave form(L=0.375”) 3.0 A Max. Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 80 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB360 Technical Data Data Sheet N0086, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 IR1 IR2 Typical Junction Capacitance * Cj Condition @ 3A, Pulse, TJ = 25℃ @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ @VR = 4.0 V, Tc=25℃ fSIG = 1MHz Max. 0.74 Units V 0.5 mA 20 mA 250 pF Specification -55 to +150 -55 to +150 Units ℃ ℃ 8 ℃/W 1.02 g Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB360 Technical Data Data Sheet N0086, Rev. - Green Products 100 Reverse Current-IR(MA) 1000 TJ=25℃ 100 TJ=125℃ 1 TJ=25℃ 0.01 0.0001 10 0 5 10 15 20 25 30 35 10 40 20 30 40 50 60 Reverse V oltage-VR(V ) Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Vs.Reverse Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage Voltage Instantaneous Forward CurrentIF(A) Junction Capacitance-CT(PF) 10000 100 TJ=125℃ TJ=25℃ 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop-VF(V) Fig.3-Typical Forward Voltage Drop Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0086, Rev. - SB360 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •