SANGDEST MICROELECTRONICS 15SQ040L Technical Data Data Sheet N0023, Rev. - Green Products 15SQ040L SCHOTTKY BARRIER RECTIFIER Applications： z z z z DC-DC converters AC adapter High frequency rectification circuit Bypass diodes Features: z z z z z Super-high speed & low noise switching Low voltage drop This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches/ mm R-6 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15SQ040L Technical Data Data Sheet N0023, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL 15SQ040L SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device 15SQ040L Package R-6 (Pb-Free) Shipping 500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15SQ040L Technical Data Data Sheet N0023, Rev. - Green Products Maximum ratings Type 15SQ040L Transient peak reverse voltage VRSM [V] @ half sine-wave 40 Characteristics Max. average forward current,R-load @Ta=50℃ Peak Repetitive Forward Current 8.3ms single half sine-wave Junction temperature at reduced reverse voltage VR ≤ 80%VRSM Forward voltage VF[V] @ IF=15A 0.48 Symbol Value Unit IFAV 15 A IFSM 150 A Tj VR ≤ 50% VRSM in DC forward mode Storage temperature Maximum DC Reverse Current at Rated DC blocking voltage @Ta=25℃， @Ta=100℃， Thermal resistance junction to case Thermal resistance junction to leads -50...+125 ≤ 150 ≤ 200 °C Ts -50…+175 °C IR <500 <100 uA mA RthC RthL 5 2.5 °C/W °C/W • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 15SQ040L Green Products 100 1000 10 Reverse Current-IR(MA) Junction Capacitance-CT(PF) Technical Data Data Sheet N0023, Rev. - TJ=25℃ 100 5 10 15 20 25 30 35 40 TJ=125℃ 1 0.1 0.01 0.001 TJ=25℃ 0.0001 0.00001 10 15 Reverse Voltage-VR(V) 25 30 35 40 Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Vs.Reverse Voltage Instantanous Forward CurrentIF(A) 20 Fig.2-Typical Values Of Reverse Current Vs.Reverse Voltage 100 10 TJ=25℃ 1 0.2 0.3 0.4 0.5 0.6 Forward Voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 45 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0023, Rev. - 15SQ040L Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •