MBRD1045CT Technical Data Data Sheet N0849, Rev. A Green Products MBRD1045CT SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150°C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DPAK(CJ) • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBRD1045CT Technical Data Data Sheet N0849, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL MBR D 10 45 CT SSG YY WW L = Device Type = Package type = Forward Current (10A) = Reverse Voltage (45V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DPAK (Pb-Free) MBRD1045CT Shipping 2500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Output Current(Per device) Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM Io IFSM Condition 50% duty cycle @TC =105°C, rectangular wave form Max. 45 Units V 10 A 8.3 ms, half Sine pulse 125 A • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBRD1045CT Technical Data Data Sheet N0849, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Reverse Current (per leg) * Symbol VF1 VF2 IR1 IR2 Junction Capacitance (per leg) Voltage Rate of Change * CT dv/dt Condition @ 5A, Pulse, TJ = 25 °C @ 5A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125°C @VR = 5V, TC = 25 °C fSIG = 1MHz - Max. 0.70 0.57 1.0 Units V V mA 15 mA 300 pF 10,000 V/μs Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Range Storage Temperature Range Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation - Specification -55 to +150 -55 to +150 Units °C °C 2.0 °C/W 0.39 g DPAK • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBRD1045CT Technical Data Data Sheet N0849, Rev. A 1000 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 10 1 TJ=125℃ 0.1 0.01 0.001 TJ=25℃ 0.0001 10 Reverse Voltage (V) 20 30 40 50 60 70 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.2 0.3 80 90 Percent of Rated Peak Reverse Voltage (%) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) 10000 Instantaneous Reverse Current-IR(MA) Green Products 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 1 100 MBRD1045CT Technical Data Data Sheet N0849, Rev. A Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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