MBR60200W Technical Data Data Sheet N1808, Rev. - Green Products MBR60200W SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • 150 °C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm SYMBOL A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 L2 P P1 P2 Q S T U MIN. 4.80 2.21 1.90 1.10 0.55 20.80 15.6 19.42 3.50 6.05 TO-247AC • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • TYP. 5.00 2.41 2.00 1.20 2.00 3.00 0.60 21.00 16.55 1.20 15.8 13.30 5.00 2.50 5.44 19.92 4.13 2.15 3.60 2.50 5.80 6.15 10.00 6.20 MAX. 5.20 2.61 2.10 1.35 0.75 21.20 16.0 20.42 3.70 7.40 6.25 MBR60200W Technical Data Data Sheet N1808, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR 60 200 W SSG YY WW L = Device Type = Forward Current (60A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBR60200W Package Shipping TO-247AC (Pb-Free) 25pcs/ tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR Condition - Max. Units 200 V A Average Forward Current IF(AV) 50% duty cycle @TC = 123°C, rectangular wave form 75 Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 600 • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • A MBR60200W Technical Data Data Sheet N1808, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop* Symbol VF1 VF2 Reverse Current* IR1 IR2 Junction Capacitance (per leg) * CT Condition @ 60 A, Pulse, TJ = 25 °C @ 120 A, Pulse, TJ = 25 °C @ 60 A, Pulse, TJ = 125 °C @ 120 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Max. 0.90 1.00 0.80 0.85 Units 1 mA 25 mA 2000 pF Specification -55 to +150 -55 to +150 Units °C °C V V Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Range Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Approximate Weight Case Style Symbol TJ Tstg Condition - RθJC DC operation 0.3 °C/W RθJA DC operation 40 °C/W 6.7 g wt TO-247AC • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBR60200W Technical Data Data Sheet N1808, Rev. - Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •