MBRB10100 N0790 REV.-

SANGDEST
MICROELECTRONICS
MBRB10100
Technical Data
Data Sheet N0790, Rev. -
Green Products
MBRB10100 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions (In Inches / mm):
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
4.85
0.25
2.89
0.96
0.61
1.37
8.85
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
15.6
2.70
1.40
2.20
0.25BSC
5°
4°
4°
8°
OPTION 1(HD)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRB10100
Technical Data
Data Sheet N0790, Rev. -
Green Products
OPTION 2(MX)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRB10100
Technical Data
Data Sheet N0790, Rev. -
Green Products
OPTION 3(CJ)
D²PAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRB10100
Technical Data
Data Sheet N0790, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
B
10
100
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (10A)
= Reverse Voltage (100V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
D²PAK
(Pb-Free)
MBRB10100
Shipping
800pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle
Non-Repetitive Surge Current
Symbol
VRWM
IF(AV)
IFSM
Condition
50% duty cycle @TC =105°C,
rectangular wave form
Max.
100
10
Units
V
A
8.3 ms, half Sine pulse
150
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRB10100
Technical Data
Data Sheet N0790, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Symbol
VF1
Condition
@ 10A, Pulse, TJ = 25 °C
Max. Forward Voltage Drop
VF2
@ 10A, Pulse, TJ = 125 °C
0.80
V
Max. Reverse Current at DC
condition
Max. Reverse Current
IR1
1.0
mA
6.0
mA
Max. Junction Capacitance
CT
250
pF
Typical Series Inductance
LS
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
8.0
nH
10,000
V/μs
Specification
-55 to +150
-55 to +150
6.0
Units
°C
°C
°C/W
1.85
g
Max. Voltage Rate of Change
*
IR2
dv/dt
Max.
0.90
Units
V
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
D2PAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBRB10100
Technical Data
Data Sheet N0790, Rev. -
Green Products
10000
Instantaneous Reverse Current (μA)
Junction Capacitance (PF)
1000
TJ=25℃
100
10
0
5
10
15
20
25
30
35
TJ=125℃
1000
100
10
TJ=25℃
1
0.1
0.01
10
40
30
40
50
60
70
80
90
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
20
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
100
TJ=125℃
10
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0790, Rev. -
MBRB10100
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •