HI-506A, HI-507A, HI-508A, HI-509A Data Sheet June 1999 File Number 3143.2 16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection Features The HI-506A, HI-507A, HI-508A and HI-509A are analog multiplexers with active overvoltage protection. Analog input levels may greatly exceed either power supply without damaging the device or disturbing the signal path of other channels. Active protection circuitry assures that signal fidelity is maintained even under fault conditions that would destroy other multiplexers. Analog inputs can withstand constant 70VP-P levels with ±15V supplies. Digital inputs will also sustain continuous faults up to 4V greater than either supply. In addition, signal sources are protected from short circuiting should multiplexer supply loss occur. Each input presents 1kΩ of resistance under this condition. These features make the HI-506A, HI-507A, HI-508A and HI-509A ideal for use in systems where the analog inputs originate from external equipment, or separately powered circuitry. All devices are fabricated with 44V dielectrically isolated CMOS technology. The HI-506A is a single 16-Channel multiplexer, the HI-507A is an 8-Channel differential multiplexer, the HI-508A is a single 8-Channel multiplexer and the HI-509A is a differential 4-Channel multiplexer. If input overvoltage protection is not needed the HI-506/507/508/509 multiplexers are recommended. For further information see Application Notes AN520 and AN521. • Maximum Power Supply . . . . . . . . . . . . . . . . . . . . . . . 44V • Analog Overvoltage . . . . . . . . . . . . . . . . . . . . . . . . 70VP-P • No Channel Interaction During Overvoltage • Fail Safe with Power Loss (No Latch-Up) • Break-Before-Make Switching • Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . ±15V • Access Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns • Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . 7.5mW Applications • Data Acquisition Systems • Industrial Controls • Telemetry Ordering Information PART NUMBER TEMP. RANGE (oC) HI1-0506A-2 -55 to 125 28 Ld CERDIP F28.6 HI1-0506A-5 0 to 75 28 Ld CERDIP F28.6 -55 to 125 28 Ld CERDIP + 160 Hour Burn-In F28.6 HI1-0506A-8 HI3-0506A-5 HI1-0507A-8 HI3-0507A-5 28 Ld PDIP -55 to 125 28 Ld CERDIP + 160 Hour Burn-In 0 to 75 28 Ld PDIP PKG. NO. E28.6 F28.6 E28.6 HI1-0508A-7 0 to 75 16 Ld CERDIP + 96 Hour Burn-In F16.3 HI1-0508A-8 -55 to 125 16 Ld CERDIP + 160 Hour Burn-In F16.3 HI3-0508A-5 +0 to 75 HI1-0509A-2 HI1-0509A-5 HI1-0509A-8 HI3-0509A-5 1 0 to 75 PACKAGE 16 Ld PDIP E16.3 -55 to 125 16 Ld CERDIP F16.3 0 to 75 16 Ld CERDIP F16.3 -55 to 125 16 Ld CERDIP + 160 Hour Burn-In F16.3 0 to 75 16 Ld PDIP E16.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HI-506A, HI-507A, HI-508A, HI-509A Pinouts HI-506A (CERDIP, PDIP) TOP VIEW 28 OUT +VSUPPLY 1 HI-507A (CERDIP, PDIP) TOP VIEW +VSUPPLY 1 28 OUT A NC 2 27 -VSUPPLY NC 3 26 IN 8 NC 3 26 IN 8A IN 16 4 25 IN 7 IN 8B 4 25 IN 7A IN 15 5 24 IN 6 IN 7B 5 24 IN 6A IN 14 6 23 IN 5 IN 6B 6 23 IN 5A IN 13 7 22 IN 4 IN 5B 7 22 IN 4A IN 12 8 21 IN 3 IN 4B 8 21 IN 3A IN 11 9 20 IN 2 IN 3B 9 20 IN 2A IN 10 10 19 IN 1 IN 2B 10 19 IN 1A 18 ENABLE IN 1B 11 18 ENABLE IN 9 11 OUT B 2 27 -VSUPPLY GND 12 17 ADDRESS A0 GND 12 17 ADDRESS A0 VREF 13 16 ADDRESS A1 VREF 13 16 ADDRESS A1 ADDRESS A3 14 15 ADDRESS A2 NC 14 15 ADDRESS A2 HI-508A (CERDIP, PDIP) TOP VIEW A0 1 16 A1 ENABLE 2 15 A2 14 GND -VSUPPLY 3 HI-509A (CERDIP, PDIP) TOP VIEW A0 1 ENABLE 2 -VSUPPLY 3 16 A1 15 GND 14 +VSUPPLY IN 1 4 13 +VSUPPLY IN 1A 4 13 IN 1B IN 2 5 12 IN 5 IN 2A 5 12 IN 2B IN 3 6 11 IN 6 IN 3A 6 11 IN 3B IN 4 7 10 IN 7 IN 4A 7 10 IN 4B OUT 8 9 IN 8 OUT A 8 2 9 OUT B HI-506A, HI-507A, HI-508A, HI-509A Truth Tables HI-506A HI-508A A3 A2 A1 A0 EN “ON” CHANNEL A2 A1 A0 EN “ON” CHANNEL X X X X L None X X X L None L L L L H 1 L L L H 1 L L L H H 2 L L H H 2 L L H L H 3 L H L H 3 L L H H H 4 L H H H 4 L H L L H 5 H L L H 5 L H L H H 6 H L H H 6 L H H L H 7 H H L H 7 L H H H H 8 H H H H 8 H L L L H 9 H L L H H 10 H L H L H 11 A1 A0 EN “ON” CHANNEL PAIR H L H H H 12 X X L None H H L L H 13 L L H 1 H H L H H 14 L H H 2 H H H L H 15 H L H 3 H H H H H 16 H H H 4 HI-507A A2 A1 A0 EN “ON” CHANNEL PAIR X X X L None L L L H 1 L L H H 2 L H L H 3 L H H H 4 H L L H 5 H L H H 6 H H L H 7 H H H H 8 3 HI-509A HI-506A, HI-507A, HI-508A, HI-509A Functional Diagrams HI-506A HI-507A OUT 1K IN 1 OUT A 1K IN 1A 1K 1K IN 2 IN 8A OUT B 1K DECODER/ DRIVER IN 1B 1K IN 16 1K DECODER/ DRIVER IN 8B OVERVOLTAGE CLAMP AND SIGNAL ISOLATION 5V REF LEVEL SHIFT OVERVOLTAGE CLAMP AND SIGNAL ISOLATION † † † † † 5V REF † DIGITAL INPUT PROTECTION LEVEL SHIFT † VREF A0 A1 A2 A3 EN † DIGITAL INPUT VREF A0 PROTECTION HI-508A † † † A1 A2 EN HI-509A OUT 1K IN 1 OUT A 1K IN 1A 1K 1K IN 2 IN 4A OUT B 1K DECODER/ DRIVER IN 1B 1K IN 8 1K DECODER/ DRIVER IN 4B OVERVOLTAGE CLAMP AND SIGNAL ISOLATION 5V REF LEVEL SHIFT † † † † A0 A1 A2 EN OVERVOLTAGE CLAMP AND SIGNAL ISOLATION † DIGITAL INPUT PROTECTION 5V REF LEVEL SHIFT † † † A0 A1 EN † DIGITAL INPUT PROTECTION 4 HI-506A, HI-507A, HI-508A, HI-509A Schematic Diagrams ADDRESS INPUT BUFFER AND LEVEL SHIFTER TTL REFERENCE CIRCUIT V+ R10 R9 Q1 VREF Q4 D3 GND LEVEL SHIFTER V+ OVERVOLTAGE PROTECTION P P P N R2 P P P P R5 V+ R3 LEVEL SHIFTED ADDRESS TO DECODE N N R8 N N N N N V- V- GND ADD IN ADDRESS DECODER V+ P P P P A0 OR A0 A1 OR A1 A2 OR A2 A3 OR A3 P P P N N N TO P-CHANNEL DEVICE OF THE SWITCH N N TO N-CHANNEL DEVICE OF THE SWITCH N N ENABLE DELETE A3 OR A3 INPUT FOR HI-507A, HI-508A, HI-509A DELETE A2 OR A2 INPUT FOR HI-509A 5 P R7 R6 N D1 P R4 D2 R1 200 Ω P V- N HI-506A, HI-507A, HI-508A, HI-509A Schematic Diagrams (Continued) MULTIPLEX SWITCH FROM DECODE OVERVOLTAGE PROTECTION N V+ Q5 P R11 1K D7 D6 D4 D5 N IN OUT N Q6 VP FROM DECODE 6 HI-506A, HI-507A, HI-508A, HI-509A Absolute Maximum Ratings Thermal Information V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V V- to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Digital Input Voltage (VEN , VA) . . . . . . . . . . . . . (V-) -4V to (V+) +4V or 20mA, Whichever Occurs First Analog Signal (VIN, VOUT). . . . . . . . . . . . . . . (V-) -20V to (V+) +20V Continuous Current, IN or OUT . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak Current, IN or OUT, Pulsed 1ms, 10% Duty Cycle (Max). . 40mA Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W) 28 Ld CERDIP Package. . . . . . . . . . . . 55 18 16 Ld CERDIP Package. . . . . . . . . . . . 85 32 28 Ld PDIP Package . . . . . . . . . . . . . . 60 N/A 16 Ld PDIP Package . . . . . . . . . . . . . . 90 N/A Maximum Junction Temperature CERDIP Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .175oC PDIP Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC Operating Conditions Temperature Ranges HI-506A/507A/508A/509A-2, -8 . . . . . . . . . . . . . . -55oC to 125oC HI-506A/507A/508A/509A-5, -7 . . . . . . . . . . . . . . . . . 0oC to 75oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications Supplies = +15V, -15V; VREF Pin = Open; VAH (Logic Level High) = 4V; VAL (Logic Level Low) = 0.8V, Unless Otherwise Specified. For Test Conditions, Consult Test Circuits Section TEST CONDITIONS PARAMETER -2, -8 -5, -7 TEMP (oC) MIN TYP MAX MIN TYP MAX UNITS 25 - 0.5 - - 0.5 - µs Full - - 1.0 - - 1.0 µs 25 25 80 - 25 80 - ns DYNAMIC CHARACTERISTICS Access Time, tA Note 2 Break-Before-Make Delay, tOPEN Note 2 Enable Delay (ON), tON(EN) Note 2 25 - 300 500 - 300 - ns Full - - 1000 - - 1000 ns 25 - 300 500 - 300 - ns Full - - 1000 - - 1000 ns To 0.1% 25 - 1.2 - - 1.2 - µs To 0.01% 25 - 3.5 - - 3.5 - µs To 0.1% 25 - 1.2 - - 1.2 - µs To 0.01% 25 - 3.5 - - 3.5 - µs Note 7 25 50 68 - 50 68 - dB 25 - 10 - - 10 - pF HI-506A 25 - 52 - - 52 - pF HI-507A 25 - 30 - - 30 - pF HI-508A 25 - 25 - - 25 - pF Note 2 Enable Delay (OFF), tOFF(EN) Settling Time, tS HI-506A and HI-507A HI-508A and HI-509A Off Isolation Channel Input Capacitance, CS(OFF) Channel Output Capacitance, CD(OFF) 25 - 12 - - 12 - pF Digital Input Capacitance, CA HI-509A 25 - 10 - - 10 - pF Input to Output Capacitance, CDS(OFF) 25 - 0.1 - - 0.1 - pF Full - - 0.8 - - 0.8 V DIGITAL INPUT CHARACTERISTICS Input Low Threshold, TTL Drive, VAL Note 2 Input High Threshold, VAH (Note 9) Note 2 Full 4.0 - - 4.0 - - V Input Leakage Current (High or Low), IA Notes 2, 6 Full - - 1.0 - - 1.0 µA 7 HI-506A, HI-507A, HI-508A, HI-509A Electrical Specifications Supplies = +15V, -15V; VREF Pin = Open; VAH (Logic Level High) = 4V; VAL (Logic Level Low) = 0.8V, Unless Otherwise Specified. For Test Conditions, Consult Test Circuits Section (Continued) TEST CONDITIONS TEMP (oC) -2, -8 -5, -7 MIN TYP MAX MIN TYP MAX UNITS MOS Drive, VAL , HI-506A/HI-507A VREF = +10V 25 - - 0.8 - - 0.8 V MOS Drive, VAH , HI-506A/HI-507A VREF = +10V 25 6.0 - - 6.0 - - V Analog Signal Range, VIN Note 2 Full -15 - +15 -15 - +15 V On Resistance, rON Notes 2, 3 PARAMETER ANALOG CHANNEL CHARACTERISTICS 25 - 1.2 1.5 - 1.5 1.8 kΩ Full - 1.5 1.8 - 1.8 2.0 kΩ 25 - 0.03 - - 0.03 - nA Full - - 50 - - 50 nA 25 - 0.1 - - 0.1 - nA HI-506A Full - - 300 - - 300 nA HI-507A Full - - 200 - - 200 nA HI-508A Full - - 200 - - 200 nA HI-509A Full - - 100 - - 100 nA 25 - 4.0 - - 4.0 - nA Full - - 2.0 - - - µA Off Input Leakage Current, IS(OFF) Off Output Leakage Current, ID(OFF) ID(OFF) With Input Overvoltage Applied On Channel Leakage Current, ID(ON) Notes 2, 4 Notes 2, 4 Note 5 25 - 0.1 - - 0.1 - nA HI-506A Notes 2, 4 Full - - 300 - - 300 nA HI-507A Full - - 200 - - 200 nA HI-508A Full - - 200 - - 200 nA HI-509A Full - - 100 - - 100 nA Full - - 50 - - 50 nA Full - 0.5 2.0 - 0.5 2.0 mA Full - 0.02 1.0 - 0.02 1.0 mA Full - 7.5 - - 7.5 - mW Differential Off Output Leakage Current, IDIFF , (HI-507A, HI-509A Only) POWER SUPPLY CHARACTERISTICS Current, I+ Notes 2, 8 Current, I- Notes 2, 8 Power Dissipation, PD NOTES: 2. 100% tested for Dash 8. Leakage currents not tested at -55oC. 3. VOUT = ±10V, IOUT = +100µA. 4. 10nA is the practical lower limit for high speed measurement in the production test environment. 5. Analog Overvoltage = ±33V. 6. Digital input leakage is primarily due to the clamp diodes (see Schematic). Typical leakage is less than 1nA at 25oC. 7. VEN = 0.8V, RL = 1K, CL = 15pF, VS = 7VRMS , f = 100kHz. 8. VEN , VA = 0V or 4V. 9. To drive from DTL/TTL Circuits, 1kΩ pull-up resistors to +5V supply are recommended. 8 HI-506A, HI-507A, HI-508A, HI-509A Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open, Unless Otherwise Specified 100µA V2 IN OUT VIN rON = V2 100µA FIGURE 1A. TEST CIRCUIT 1.4 1.2 1.1 25oC 1.0 -55oC 0.9 0.8 0.7 0.6 -10 -55oC TO 125oC VIN = +5V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -8 -6 -4 -2 0 2 4 ANALOG INPUT (V) 6 8 10 5 6 7 8 9 10 11 12 13 14 SUPPLY VOLTAGE (±V) FIGURE 1B. ON RESISTANCE vs ANALOG INPUT VOLTAGE FIGURE 1C. NORMALIZED ON RESISTANCE vs SUPPLY VOLTAGE FIGURE 1. ON RESISTANCE 100nA LEAKAGE CURRENT 10nA ON LEAKAGE CURRENT ID(ON) OFF OUTPUT CURRENT ID(OFF) +0.8V EN OUT 1nA A 10pA ±10V OFF INPUT LEAKAGE CURRENT IS(OFF) 100pA 25 50 75 100 ID(OFF) ± ON RESISTANCE (kΩ) NORMALIZED RESISTANCE (REFERRED TO VALUE AT ±15V) 125oC 1.3 10V 125 TEMPERATURE (oC) FIGURE 2A. LEAKAGE CURRENT vs TEMPERATURE 9 FIGURE 2B. ID(OFF) TEST CIRCUIT (NOTE 10) 15 HI-506A, HI-507A, HI-508A, HI-509A Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open, Unless Otherwise Specified (Continued) OUT OUT IS(OFF) A A +0.8V EN ± ±10V A0 10V A1 ID(ON) EN ±10V 10V ± 4V FIGURE 2C. IS(OFF) TEST CIRCUIT (NOTE 10) FIGURE 2D. ID(On) TEST CIRCUIT (NOTE 10) NOTE: 10. Two measurements per channel: ±10V and +10V. (Two measurements per device for ID(OFF) ±10V and +10V.) FIGURE 2. LEAKAGE CURRENTS ANALOG INPUT CURRENT (mA) 18 6 ANALOG INPUT CURRENT (IIN) 15 5 12 4 9 3 6 2 OUTPUT OFF LEAKAGE CURRENT ID(OFF) 3 1 0 OUTPUT OFF LEAKAGE CURRENT (nA) 7 A IIN A ID(OFF) ±VIN 0 15 18 21 24 27 30 33 36 ANALOG INPUT OVERVOLTAGE (±V) FIGURE 3A. ANALOG INPUT OVERVOLTAGE CHARACTERISTICS FIGURE 3B. TEST CIRCUIT FIGURE 3. ANALOG INPUT OVERVOLTAGE CHARACTERISTICS ±14 -55oC SWITCH CURRENT (mA) ±12 ±10 25oC 125oC ±8 ±6 ±VIN ±4 A ±2 0 0 2 4 6 8 10 12 14 VOLTAGE ACROSS SWITCH (±V) FIGURE 4A. ON CHANNEL CURRENT vs VOLTAGE FIGURE 4. ON CHANNEL CURRENT 10 FIGURE 4B. TEST CIRCUIT HI-506A, HI-507A, HI-508A, HI-509A Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open, Unless Otherwise Specified (Continued) +15V/+10V +ISUPPLY V+ IN 1 HI-506A † A2 IN 2 THRU A1 IN 7/IN 15 6 ±10V/±5V A3 VSUPPLY = ±15V 4 VA 50Ω VSUPPLY = ±10V A0 2 IN 8/IN 16 EN +4V GND 0 1K 10K 100K TOGGLE FREQUENCY (Hz) 1M ± SUPPLY CURRENT (mA) A OUT V- 10V/ 10 MΩ ± 8 5V 14 pF A -ISUPPLY 10M -15V/-10V FIGURE 5A. SUPPLY CURRENT vs TOGGLE FREQUENCY † Similar connection for HI-507A/HI-508A/HI-509A FIGURE 5B. TEST CIRCUIT FIGURE 5. DYNAMIC SUPPLY CURRENT +15V 900 ACCESS TIME (ns) VREF A3 700 A2 VA 600 50Ω A1 HI-506A † IN 16 EN +4V GND 400 ±10V IN 2 THRU IN 7/IN 15 A0 500 V+ IN 1 ± VREF = OPEN FOR LOGIC HIGH LEVEL ≤ 6V VREF = LOGIC HIGH FOR LOGIC HIGH LEVELS > 6V 800 10V OUT V- 300 3 4 5 6 7 9 10 11 12 8 LOGIC LEVEL (HIGH) (V) 13 14 FIGURE 6A. ACCESS TIME vs LOGIC LEVEL (HIGH) 15 -15V † Similar connection for HI-507A/HI-580A/HI-509A FIGURE 6B. TEST CIRCUIT VAH = 4.0V VA INPUT 2V/DIV. ADDRESS DRIVE (VA) S1 ON 1/ V 2 AH 0V +10V OUTPUT 5V/DIV. OUTPUT 10% -10V S16 ON tA 200ns/DIV. FIGURE 6C. MEASUREMENT POINTS FIGURE 6D. WAVEFORMS FIGURE 6. ACCESS TIME 11 10 kΩ 50 pF HI-506A, HI-507A, HI-508A, HI-509A Test Circuits and Waveforms A3 TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open, Unless Otherwise Specified (Continued) HI-506A † A2 +5V IN 1 VAH = 4.0V IN 2 THRU VA 50Ω +4.0V A1 IN 7/IN 15 A0 IN 8/IN 16 EN OUT ADDRESS DRIVE (VA) 0V VOUT OUTPUT GND 1kΩ 50pF 50% tOPEN † Similar connection for HI-507A/HI-508A/HI-509A FIGURE 7A. TEST CIRCUIT FIGURE 7B. MEASUREMENT POINTS VA INPUT 2V/DIV. S1 ON S16 ON OUTPUT 0.5V/DIV. 100ns/DIV. FIGURE 7C. WAVEFORMS FIGURE 7. BREAK-BEFORE-MAKE DELAY 12 50% HI-506A, HI-507A, HI-508A, HI-509A Test Circuits and Waveforms A3 TA = 25oC, VSUPPLY = ±15V, VAH = 4V, VAL = 0.8V, VREF = Open, Unless Otherwise Specified (Continued) HI-506A † A2 IN 1 A1 IN 2 THRU IN 7/IN 15 IN 8 /IN 16 +10V VAH = 4.0V 50% 50% 0V A0 EN VA 50Ω ENABLE DRIVE (VA) VOUT OUT GND 1kΩ 90% OUTPUT 10% 0V 50pF tON(EN) tOFF(EN) † Similar connection for HI-507A//HI-508A/HI-509A FIGURE 8A. TEST CIRCUIT FIGURE 8B. MEASUREMENT POINTS ENABLE DRIVE 2V/DIV. DISABLED ENABLED (S1 ON) OUTPUT 2V/DIV. 100ns/DIV. FIGURE 8C. WAVEFORMS FIGURE 8. ENABLE DELAYS 13 HI-506A, HI-507A, HI-508A, HI-509A Die Characteristics DIE DIMENSIONS: WORST CASE CURRENT DENSITY: 1.4 x 105 A/cm2 159 mils x 83.9 mils TRANSISTOR COUNT: METALLIZATION: 485 Type: CuAl Thickness: 16kÅ ±2kÅ PROCESS: SUBSTRATE POTENTIAL (NOTE): CMOS-DI -VSUPPLY PASSIVATION: Silox: 12kÅ ±2kÅ Nitride: 3.5kÅ ±1kÅ NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a conductor at -VSUPPLY potential. Metallization Mask Layouts HI-506A EN (18) A0 (17) A1 A2 (16) (15) HI-507A A3 VREF (14) (13) GND (12) EN (18) A0 (17) A1 A2 (16) (15) NC VREF (14) (13) GND (12) IN 1 (19) IN 9 (11) IN 1A (19) IN 2 (20) IN 10 (10) IN 2A (20) IN 3 (21) IN 11 (9) IN 3A (21) IN 3B (9) IN 4 (22) IN 12 (8) IN 4A (22) IN 4B (8) IN 5 (23) IN 6 (24) IN 13 (7) IN 14 (6) IN 5A (23) IN 6A (24) IN 5B (7) IN 6B (6) IN 7 (25) IN 15 (5) IN 7A (25) IN 7B (5) IN 8 (26) IN 16 (4) IN 8A (26) IN 8B (4) V- (27) +V (1) OUT (28) 14 NC (2) V- (27) IN 1B (11) IN 2B (10) OUT A (28) +V (1) OUT B(2) HI-506A, HI-507A, HI-508A, HI-509A Die Characteristics DIE DIMENSIONS: WORST CASE CURRENT DENSITY: 1.4 x 105 A/cm2 108 mils x 83 mils TRANSISTOR COUNT: METALLIZATION: 253 Type: CuAl Thickness: 16kÅ ±2kÅ PROCESS: SUBSTRATE POTENTIAL (NOTE): CMOS-DI -VSUPPLY PASSIVATION: Silox: 12kÅ ±2kÅ Nitride: 3.5kÅ ±1kÅ NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a conductor at -VSUPPLY potential. Metallization Mask Layouts HI-508A IN 6 (11) IN 7 IN 8 (10) (9) HI-509A OUT (8) IN 4 IN 3 (7) (6) IN 3B IN 4B OUT B (11) (10) (9) OUT A (8) IN 4A IN 3A (7) (6) IN 5 (12) IN 2 (5) IN 2B (12) IN 2A (5) +V (13) GND (14) IN 1 (4) -V (3) IN 1B (13) +V (14) IN 1A (4) -V (3) A2 (15) A1 (16) A0 (1) EN (2) GND (15) A1 (16) A0 (1) EN (2) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 15