INTERSIL 5962D9569402VEC

HS-0548RH, HS-0549RH
TM
Data Sheet
August 2001
Radiation Hardened Single 8/Differential 4
Channel CMOS Analog Multiplexers with
Active Overvoltage Protection
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The HS-0548RH and HS-0549RH are radiation hardened
analog multiplexers with Active Overvoltage Protection and
guaranteed rON matching. Analog input levels may greatly
exceed either power supply without damaging the device or
disturbing the signal path of other channels. Active
protection circuitry assures that signal fidelity is maintained
even under fault conditions that would destroy other
multiplexers. Analog inputs can withstand constant 70V
peak-to-peak levels with ±15V supplies and digital inputs will
sustain continuous faults up to 4V greater than either supply.
In addition, signal sources are protected from short circuiting
should multiplexer supply loss occur: each input presents
1kΩ of resistance under this condition. These features make
the HS-0548RH and HS-0549RH ideal for use in systems
where the analog inputs originate from external equipment
or separately powered circuitry. Both devices are fabricated
with 44V dielectrically isolated CMOS technology. The
HS-0548 is an 8 channel device and the HS-0549 is a
4 channel differential version. If input overvoltage protection
is not needed, the HS-0508 and HS-509 multiplexers are
recommended.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95694. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com
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Ordering Information
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5962D9569401VEA
HS1-0548RH-Q
-55 to 125
5962D9569401VEC
HS1B-0548RH-Q
-55 to 125
5962D9569402VEA
HS1-0549RH-Q
-55 to 125
5962D9569402VEC
HS1B-0549RH-Q
-55 to 125
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(oC)
3543.4
Features
• Electrically Screened to SMD # 5962-95694
• QML Qualified per MIL-PRF-38535 Requirements
• Gamma Dose . . . . . . . . . . . . . . . . . . . . . . 1 x 104RAD(Si)
• No Latch-Up
• No Channel Interaction During Overvoltage
• Guaranteed rON Matching
• Maximum Power Supply . . . . . . . . . . . . . . . . . . . . . . 44V
• Break-Before-Make Switching
• Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . ±15V
• Access Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0µs
Applications
• Data Acquisition Systems
• Control Systems
• Telemetry
Pinouts
HS-0548RH GDIP1-T16 (CERDIP)
OR CDIP2-T16 (SBDIP)
TOP VIEW
AO 1
16 A1
ENABLE 2
15 A2
-VSUPPLY 3
14 GND
IN 1 4
13 +VSUPPLY
IN 2 5
12 IN 5
IN 3 6
11 IN 6
IN 4 7
10 IN 7
8
9 IN 8
OUT
HS-0549RH GDIP1-T16 (CERDIP)
OR CDIP2-T16 (SBDIP)
TOP VIEW
A0 1
ENABLE 2
-VSUPPLY 3
1
File Number
16 A1
15 GND
14 +VSUPPLY
IN 1A
4
13 IN 1B
IN 2A
5
12 IN 2B
IN 3A
6
11 IN 3B
IN 4A
7
10 IN 4B
OUTA
8
9 OUT B
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HS-0548RH, HS-0549RH
Functional Diagrams
HS-0548
HS-0549
IN1
IN1A
OUT
OUT A
1K
1K
IN4A
IN2
1K
1K
DECODER/
DRIVER
IN1B
OUT B
1K
1K
DECODER/
DRIVER
IN4B
IN8
OVERVOLTAGE
CLAMP AND
SIGNAL
ISOLATION
OVERVOLTAGE
CLAMP AND
SIGNAL
ISOLATION
LEVEL
SHIFT
5V
REF
† DIGITAL INPUT PROTECTION
† † † †
5V
REF
LEVEL
SHIFT
† DIGITAL INPUT PROTECTION
A0 A1 A2 EN
HS-0548 TRUTH TABLE
† †
†
A0 A1
EN
HS-0549 TRUTH TABLE
A2
A1
A0
EN
“ON”
CHANNEL
X
X
X
L
NONE
L
L
L
H
1
L
L
H
H
2
L
H
L
H
3
L
H
H
H
4
H
L
L
H
5
H
L
H
H
6
H
H
L
H
7
H
H
H
H
8
A1
A0
EN
“ON”
CHANNEL
PAIR
X
X
L
NONE
L
L
H
1
L
H
H
2
H
L
H
3
H
H
H
4
Switching Waveforms
+10V
OUTPUT A
-8V
VA
A1
IN 2 THRU IN 7
A0
IN 8
EN
GND
-10V
VAH
VA INPUT
2V/DIV.
IN 1
±
VAL = 0V
1/2VAH
±10V
A2
VAH = 4.0 ADDRESS
DRIVE (VA)
10V
OUT
VOUT
CH 1 ON
OUTPUT A
5V/DIV.
10K
tA
CH 8 ON
200ns/DIV.
FIGURE 1. ACCESS TIME
2
HS-0548RH, HS-0549RH
Switching Waveforms
(Continued)
VAH = 4.0
0V
50%
IN 1
A1
VA
50%
+5V
A2
ADDRESS
DRIVE (VA)
OUTPUT
VA INPUT
2V/DIV.
IN 2 THRU IN 7
A0
IN 8
EN
OUT
GND
CH8 ON
CH 1 ON
VOUT
VAH
1K
OUTPUT
1V/DIV.
tOPEN
100ns/DIV.
FIGURE 2. BREAK-BEFORE-MAKE DELAY (tOPEN)
VAH = 4.0
A2
50%
+10V
IN 1
ENABLE
DRIVE
2V/DIV.
A1
IN 2 THRU IN 8
0V
A0
EN
OUTPUT
GND
VA
90%
OUT
CH 1 ON
1K
90%
tON(EN)
OUTPUT
4V/DIV.
CH 1 OFF
tOFF
(EN)
100ns/DIV.
FIGURE 3. ENABLE DELAY tON(EN) , t OFF(EN)
Schematic Diagrams
TTL REFERENCE CIRCUIT
V+
R10
R9
Q1
Q4
D3
LEVEL SHIFTER
V+
P
P
P
P
OVERVOLTAGE
PROTECTION
R3
V+
ADD
IN.
D2
R1
N
P
P
N
R5
R7
LEVEL
SHIFTED
ADDRESS
TO
DECODE
R6
R8
R4
N
N
N
N
200Ω
D1
N
N
V-
V-
FIGURE 4. ADDRESS INPUT BUFFER AND LEVEL SHIFTER
3
P
R2
N
P
P
P
N
LEVEL
SHIFTED
ADDRESS
TO
DECODE
HS-0548RH, HS-0549RH
Schematic Diagrams
(Continued)
FROM
DECODE
OVERVOLTAGE
+V
P
P
P
P
P
P
PROTECTION
N
V+
P
N
A0 OR A0
N
Q5
N
R11
N
D6
D7
D4
D5
IN
A1 OR A1
OUT
N
1K
N
N
Q6
A2 OR A2
N
V
ENABLE
P
VTO N-CHANNEL DEVICE OF THE SWITCH PAIR
TO P-CHANNEL DEVICE OF THE SWITCH PAIR
FROM
DECODE
FIGURE 5. ADDRESS DECODER
FIGURE 6. MULTIPLEX SWITCH
Burn-In/Life Test Circuits
V1
F0
1
16
F1
1
16
F3
2
15
F2
2
15
3
14
4
13
5
12
6
11
7
10
8
9
V1
D1
C1
R1
3
14
4
13
5
12
6
11
7
10
8
9
V2
V2
D2
D1
C1
C2
R1
HS-0548RH
DYNAMIC BURN-IN AND LIFE TEST CIRCUIT
V1
V2
R1
C1
=
=
=
=
D1
F0
F1
F2
F3
=
=
=
=
=
-15V maximum, -16V minimum
+15V minimum, +16V maximum
10kΩ ±5% 1/4W
C 2 = 0.01µF minimum (per socket) or 0.1µF minimum
(per row)
D 2 = 1N4002 (or equivalent)
100kHz 50% duty cycle; VIL = 0.8V Max; VIH = 4.0V Min.
F0/2
F1/2
F2/2
4
V3
D2
HS-0548RH
STATIC BURN-IN TEST CIRCUIT
V1
V2
V3
R1
C1
=
=
=
=
=
5V minimum, 6V maximum
-15V maximum, -16V minimum
+15V minimum, +16V maximum
10kΩ ±5% 1/4W
C2 = 0.01µF minimum (per socket) or 0.1µF minimum
(per row)
D1 = D2 = 1N4002 (or equivalent)
C2
HS-0548RH, HS-0549RH
Burn-In/Life Test Circuits
F0
1
16
F2
2
15
3
14
4
13
5
12
6
V3
D1
(Continued)
C1
F1
1
16
2
15
3
14
4
13
5
12
11
6
11
7
10
7
10
8
9
8
9
V2
D1
R1
V3
C1
D1
C1
=
=
=
=
=
=
+15.5V, ±.0.5V
-15.5V, ±0.5V
10kΩ, ±5%
0.01µF minimum (per socket)
1N4002 or equivalent (per board)
100kHz, ±10%; F1 = F0/2; F2 = F1/2 ,
50% duty cycle, VIL = 0.8V Max; VIH = 4.0V Min
V2
D1
R1
R1
R1
HS-0549RH
STATIC BURN-IN TEST CIRCUIT
HS-0549RH
DYNAMIC BURN-IN AND LIFE TEST CIRCUIT
V2
V3
R1
C1
D1
F0
V1
V1
V2
V3
R1
C1
D1
=
=
=
=
=
=
+5.5V, ±0.5V
+15.5V, ±0.5V
-15.5V, ±0.5V
10kΩ, ±10%
0.01µF minimum (per socket)
1N4002 or equivalent (per board)
Irradiation Circuits
+5V
-15V
+1V
1
16
2
15
3
14
4
13
5
6
+5V
1
16
2
15
3
14
4
13
12
5
12
11
6
11
7
10
7
10
8
9
8
9
+15V
+1V
R2
R1
-15V
+1V
R1
HS-0549RH
HS-0548RH
R1 = R2 = 10kΩ ±5%
R1 = 10kΩ ±5%
5
+15V
+1V
C1
HS-0548RH, HS-0549RH
Die Characteristics
DIE DIMENSIONS:
Substrate:
83 mils x 108 mils x 19 mils
CMOS, DI
INTERFACE MATERIALS:
ASSEMBLY RELATED INFORMATION:
Glassivation:
Substrate Potential:
Type: Nitride
Thickness: 7kÅ ±0.7kÅ
Floating
ADDITIONAL INFORMATION:
Top Metallization:
Worst Case Current Density:
Type: Al
Thickness: 16kÅ ±2kÅ
1.4 x 105 A/cm 2
Transistor Count:
253
Metallization Mask Layout
HS-0548RH
IN 6
IN 7
IN 8
HS-0549RH
OUT
IN 4
IN3B IN4B OUT B
IN 3
OUT A
IN4A IN3A
IN 5
IN 2
IN2B
IN2A
+V
IN 1
IN1B
IN1A
GND
-V
A2
A1
A0
EN
V-
+V
GND
A1
A0
EN
NOTE: Pad Numbers Correspond to DIP Pin Numbers Only
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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