MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - Green Products MBR6040WT/MBR6045WT SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration Features: • • • • • • • • • 150°C TJ operation Center tap TO-247AD package Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request ANODE 1 ANODE 2 1 3 2 COMMON CATHODE BASE Mechanical Dimensions: In mm OPTION 1 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - Green Products OPTION 2 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - Green Products OPTION 3 TO-247AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR 60 45 WT SSG YY WW L = Device Type = Forward Current (60A) = Reverse Voltage (45V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBR6045WT Package Shipping TO-247AD (Pb-Free) 30pcs/ tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Reverse Voltage Max. Average Forward Current Repetitive Avalanche Current(per leg) Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy(per leg) Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =135℃ rectangular wave form IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max.VA=1.5×VR typical IFSM 8.3 ms, half Sine pulse EAS TJ=25℃,IAS=4A,L=3.4mH 40 45 Max MBR6040WT MBR6045WT 30(per leg) 60(per leg) 6 Units V A A 432 A 27 mJ • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change Symbol VF1 VF2 IR1 IR2 CT LS dv/dt Condition @ 30A, Pulse, TJ = 25℃ @ 30 A, Pulse, TJ = 125℃ @VR = rated VDC ,TJ = 25℃ @VR = rated VDC ,TJ = 125℃ @VR = 5V, TC = 25℃ fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.65 0.55 1.0 150 1400 Units V V mA mA pF 7.5 nH 10,000 V/μs Specification -55 to +150 -55 to +150 1.0（per device） 0.5（per device） 0.24 Units ℃ ℃ ℃/W 6.7 g * Pulse Width < 300µs, Duty Cycle <2% Measured lead to lead 5 mm from package body Thermal-Mechanical Specifications: Characteristics Junction Temperature Range Storage Temperature Range Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance，Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg RθJC RθCS wt Condition DC operation Mounting surface, smooth and greased - ℃/W TO-247AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Green Products 1000 Reverse Current-IR(MA) 10000 1000 TJ=25℃ 100 100 10 TJ=125℃ 1 0.1 TJ=25℃ 0.01 0.001 0 5 10 15 20 25 30 35 40 10 20 30 40 50 60 70 80 90 Reverse Voltage-VR(%) Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Vs.Reverse Voltage Instantaneous Forward CurrentIF(A) Junction Capacitance-CT(PF) Technical Data Data Sheet N0745, Rev. - Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage 100 TJ=125℃ 10 TJ=25℃ 1 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage Drop-VF(V) Fig.3-Typical Forward Voltage Drop Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - MBR6040WT MBR6045WT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •