SMP4050-12UTG Technical Data Data Sheet N1737 Rev.- Green Products Description The SMP4050 integrates low capacitance diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can safely absorb up to 20A per IEC61000-4-5 (tp=8/20μs) without performance degradation and a minimum ±30kV ESD per IEC61000-4-2 International Standard. Their low loading capacitance also makes them ideal for protecting high speed signal pins. Features • • • ESD protection in accordance with: IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC 61000-4-5 (lightning) 20A (8/20μs) IEC 61000-4-4 (EFT) 40A (5/50ns) Low capacitance: 4.4pF typical per I/O Low leakage current of 1μA (MAX) at 2.5V Applications • • • • • LCD/PDP TVs Desktops Game Consoles Set Top Boxes Notebooks Pinout Functional Block Diagram Note: Pinout diagrams above shown as device footprint on circuit board. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP4050-12UTG Technical Data Data Sheet N1737 Rev.- Green Products Ordering Information: Device SMP4050-12UTG Package Min. Order Qty. μDFN-12 (Pb-Free) 3000 Absolute Maximum Ratings: Parameter Symbol Value Unit Peak Pulse Current (tp=8/20μs) IPP 20 A Peak Pulse Power (tp=8/20μs) PPK 300 W Operating Junction Temperature Range TOP -40 to + 85 °C TSTOR -50 to + 150 °C Value Unit -65 to + 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature(Soldering 10s) 260 °C Storage Temperature Range Thermal Information: Parameter Storage Temperature Range Electrical Characteristics: (TOP=25°C) Characteristics Reverse Stand-Off Voltage Snap Back Voltage Reverse Leakage Current Clamping Voltage1 Symbol VRWM VSB ILEAK VC ESD With stand Voltage1 Junction Capacitance1 Junction Capacitance1 VESD CI/O-GND CI/O-I/O Condition ISB=50mA VR = 2.5V, I/O to ground IPP = 1A, tp=8/20μs, Fwd IPP = 10A, tp=8/20μs, Fwd IPP = 20A, tp=8/20μs, Fwd IEC61000-4-2 (Contact) IEC61000-4-2 (Air) VR = 0V, fSIG = 1MHz VR = 0V, fSIG = 1MHz Min. 2.0 ±30 ±30 - Typ. 0.5 4.5 8.9 13.2 4.5 2.2 Note: 1. Parameter is guaranteed by design and/or device characterization. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • Max. 2.5 1.0 5.0 - Units V V μA V V V kV kV pF pF SMP4050-12UTG Technical Data Data Sheet N1737 Rev.- Marking Diagram Green Products Part Name Information SMP 4050 – 12 U T G G= Green PH12 T= Tape & Reel Where PH12 is SMP4050-12UTG PH12 = Part Name Package U = μDFN-12 Number of Channels Series Silicon Protection Array Pulse Waveform Insertion Loss (S21) I/O to GND Clamping Voltage vs. IPP Capacitance vs. Bias • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP4050-12UTG Technical Data Data Sheet N1737 Rev.- Green Products Mechanical Dimensions (In mm/Inches): Symbol A A1 A2 b b1 D D2 E e e1 e2 L L1 L2 μDFN-12 Millimeters Inches Min Max Min Max 0.50 0.65 0.020 0.026 0.00 0.05 0.00 0.002 0.150 REF 0.006REF 0.15 0.25 0.006 0.010 0.10 0.30 0.004 0.012 3.40 3.60 0.134 0.142 2.70 0.106 2.40 2.60 0.095 0.103 0.50 BSC 0.020 BSC 0.60 BSC 0.024 BSC 1.10 BSC 0.044 BSC 0.30 0.40 0.012 0.016 0.90 1.10 0.036 0.044 0.70 0.90 0.028 0.036 Embossed Carrier Tape & Reel Specification μDFN-12 Symbol Millimeters Inches Min Max Min Max A0 2.63 2.83 0.104 0.112 B0 3.63 3.83 0.143 0.151 D0 1.40 1.60 0.055 0.063 E 1.65 1.85 0.065 0.073 F 5.45 5.55 0.215 0.219 K0 0.85 1.05 0.033 0.041 P0 3.90 4.10 0.154 0.161 P1 3.90 4.10 0.154 0.161 P2 1.95 2.05 0.077 0.081 T 0.18 0.22 0.007 0.009 W 11.90 12.30 0.469 0.484 • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SMP4050-12UTG Technical Data Data Sheet N1737 Rev.- Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •