SANGDEST MICROELECTRONICS MUR530AX Technical Data Data Sheet N0269, Rev. - Green Products MUR530AX ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • • Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Low Power Loss Super Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MUR530AX Technical Data Data Sheet N0269, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MUR 5 30 AX SSG YY WW L = Device Type = Forward Current (5A) = Reverse Voltage (300V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DO-201AD (Pb-Free) MUR530AX Shipping 1250pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Symbol VRWM IF(AV) Peak One Cycle NonRepetitive Surge Current IFSM Condition 50% duty cycle @Tc=100°C, rectangular wave form 8.3ms, Half Sine pulse Max. 300 5 Units V A 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MUR530AX Technical Data Data Sheet N0269, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop (Per leg)* Reverse Current (Per leg)* Reverse Recovery Time (Per leg)* Symbol VF1 VF2 IR1 Condition @ IF=5A, Pulse, TJ = 25℃ @ IF=5A, Pulse, TJ = 125℃ @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ IF=500mA, IR=1A,and Irm=250mA Max. 1.3 1.2 10 Units V V μA 400 μA 50 ns Symbol TJ Tstg RθJC Condition - Specification -55 to +150 -55 to +150 1.5 Units ℃ ℃ ℃/W wt - 1.02 g IR2 trr * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Case (Per Leg) Approximate Weight Case Style DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MUR530AX Technical Data Data Sheet N0269, Rev. - Green Products 10 Reverse Current-IR(μA) Junction Capacitance-CT(PF) 1000 100 TJ=25℃ 10 1 TJ=125℃ 0.1 0.01 TJ=25℃ 0.001 1 0 5 10 15 20 25 30 35 0 40 50 Fig.1-Typical Junction Capacitance Instantaneous Forward Current-IF(A) 100 150 200 250 R everse Voltage-VR (V) Reverse Voltage-VR(V) Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Forward Voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 300 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0269, Rev. - MUR530AX Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •