SANGDEST MICROELECTRONICS MUR330AX Technical Data Data Sheet N0260, Rev. - Green Products MUR330AX ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • • Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Low Power Loss Super Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MUR330AX Technical Data Data Sheet N0260, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MUR 3 30 AX SSG YY WW L = Device Type = Forward Current (3A) = Reverse Voltage (300V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DO-201AD (Pb-Free) MUR330AX Shipping 1250pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Repetitive Peak Inverse Voltage Average Rectified Output Current One Cycle Non-Repetitive Surge Forward Current Symbol Condition Max. Units VRWM - 300 V 3 A 100 A Io IFSM 50% duty cycle @Tc=75°C, rectangular wave form 8.3ms, Half Sine pulse • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MUR330AX Technical Data Data Sheet N0260, Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop* Reverse Current* Symbol VF IR1 IR2 Reverse Recovery Time trr Condition @ IF=3A, Pulse, TJ = 25 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 100 °C IF=0.5A, IR=1A,and IRR=0.25A Max. 1.25 5 Units V μA 100 μA 35 ns Specification -55 to +150 -55 to +150 8 1.02 Units °C °C °C/W g * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation DO-201AD *1 Alumina Substrate Mounted (Soldering Lands=2×3.5mm, Both Sides) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MUR330AX Technical Data Data Sheet N0260, Rev. - Green Products 10 μA) Instantaneous Reverse Current.( Junction Capacitance.(PF) 100 TJ=25℃TJ=25℃ 10 1 0 5 10 15 20 25 30 35 TJ=125℃ 1 0.1 TJ=25℃ 0.01 0.001 10 40 30 40 50 60 70 80 90 Pe r ce n t o f Pe ak Re ve r s e V o ltag e .(%) Reverse Voltage.(V) Fig.1-Typical Junction Capacitance Instantaneous Forwar Current(A) 20 Fig.2-Typical Reverse Characteristics 100 10 TJ=25℃ 1 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Forward Voltage Drop-VFM(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0260, Rev. - MUR330AX Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •