SANGDEST MICROELECTRONICS MURF3020CT Technical Data Data Sheet N0360, Rev. A Green Products MURF3020CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • Ultra-Fast Switching High Current Capability Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm SYMBOL A A1 A2 A3 b b1 b2 b3 b4 c D E e e1 H1 L L1 L2 L3 ΦP1(上口) ΦP2(下口) Q Θ1 Θ2 Θ3 Θ4 Θ5 MIN. 4.30 1.10 2.80 2.50 0.50 1.10 1.50 1.20 1.60 0.55 14.80 9.96 6.50 12.70 1.60 0.80 0.60 3.30 2.99 2.50 TYP. 4.50 1.30 3.00 2.70 0.60 1.20 1.60 1.30 1.70 0.60 15.00 10.16 2.55 5.10 6.70 13.20 1.80 1.00 0.80 3.50 3.19 2.70 5° 4° 10° 5° 5° MAX. 4.70 1.50 3.20 2.90 0.75 1.35 1.75 1.45 1.85 0.75 15.20 10.36 6.90 13.70 2.00 1.20 1.00 3.70 3.39 2.90 ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MURF3020CT Technical Data Data Sheet N0360, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL MUR F 30 20 CT SSG YY WW L = Device Type = Package type = Forward Current (30A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) MURF3020CT Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Symbol VRWM IF (AV) Peak One Cycle NonRepetitive Surge Current (Per leg) IFSM Condition 50% duty cycle @Tc=125°C, rectangular wave form Max. 200 30 Units V A 8.3ms, Half Sine pulse 110 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MURF3020CT Technical Data Data Sheet N0360, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop* (Per leg) Reverse Current* (Per leg) Reverse Recovery Time RSM Isolation Voltage (t=1.0 second,R.H.< =30%, TA =25°C) Symbol Condition VF1 @15A, Pulse, TJ = 25°C IR1 @VR = rated VR TJ = 25°C @VR = rated VR TJ = 125°C IF=500mA, IR=1A,and Irm=250mA IR2 trr V1so Clip mouting, the epoxy body away from the heatsink edge by more than 0.110”along the lead direction. Clip mouting, the epoxy body is inside the heatsink Screw mounting, the epoxy body is inside the heatsink. Max. Units 1.05 V 10 μA 3.5 mA 35 ns 4500 V 3500 1500 * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation - Specification -55 to +150 -55 to +150 1.5 Units °C °C °C/W 2 g ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0360, Rev. A MURF3020CT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •