TS8510VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H in mm): 0.250 x 0.250 x 0.17 • Peak wavelength: λ = 850 nm • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TS8510VA is a high power infrared, 850 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT φe (mW) ϕ (deg) λp (nm) tr (ns) 12 55 850 10 PACKAGING REMARKS PACKAGE FORM wafer sawn on foil MOQ: 25 000 pcs chip TS8510VA Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TS8510VA-SF-F Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward current Reverse voltage Surge forward current Junction temperature tp/T = 0.1, tp = 100 μs SYMBOL VALUE UNIT IF 70 mA VR 5 V IFSM 1 A Tj 100 °C Tamb -40 to +100 °C Storage temperature range chip Tstg1 -40 to +120 °C Storage temperature range on foil Tstg2 -40 to +40 °C Operating temperature range Rev. 1.0, 25-Feb-15 Document Number: 84308 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TS8510VA www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION SYMBOL IF = 20 mA, tp = 20 ms VF IF = 70 mA, tp = 20 ms VF IF = 50 mA φe IR = 5 μA VR 10 IF = 50 mA ϕ 50 55 60 840 855 870 Radiant power (1) Reverse voltage Angle of half intensity MIN. TYP. MAX. UNIT 1.4 V 1.6 V 12 mW V deg Peak wavelength IF = 50 mA λp Spectral bandwidth IF = 20 mA λ0.5 35 nm Rise time / fall time IF = 100 mA tr , tf 10 ns nm Note (1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating 0° 100 1 80 20° 30° IF = 20 mA IF = 30 mA 0.75 70 60 50 0.5 40 30 0.25 20 10 00 650 700 10° 750 750 800 850 850 900 950 0.9 50° 0.8 60° 70° 0.7 950 1000 80° 0.6 0.4 0.2 0 94 8013 Wavelength (nm) λ λ- -Wavelength (nm) 21776-1 40° 1.0 ϕ - Angular Displacement 90 Ie, rel - Relative Radiant Sensitivity e, rel Ie, rel Φ - Relative Radiant Intensity - Relative Radiant Power (%) BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Relative Spectral Emission φe rel = f (λ) Fig. 2 - Radiant Characteristics Irel = f(ϕ) MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.25 mm Length of chip edge (y-direction) Ly 0.25 mm Die height H 0.17 mm Diameter of bondpad d 0.100 mm ADDITIONAL INFORMATION Frontside metallization, cathode gold alloy Backside metallization, anode gold alloy Dicing Die bonding technology sawing epoxy bonding Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. Rev. 1.0, 25-Feb-15 Document Number: 84308 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TS8510VA www.vishay.com Vishay Semiconductors HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Rev. 1.0, 25-Feb-15 Document Number: 84308 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000