UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal. FEATURES * VDS =20 V * ID =6.5 A * RDS(ON)<22 mΩ @ VGS=4.5V, ID =6.5A SYMBOL ORDERING INFORMATION Ordering Number Package UT3416G-AE2-R UT3416G-AE3-R SOT-23-3 SOT-23 Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel MARKING 34SG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-325.E UT3416 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Ta=25°C) ID 6.5 A Pulsed Drain Current (Note 2) IDM 30 A Power Dissipation (Ta=25°C)(Note 3) PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. Surface mounted on 1in2 copper pad of FR4 board. THERMAL DATA PARAMETER SYMBOL Junction to Ambient (Note) θJA Note: Surface mounted on 1 in2 copper pad of FR4 board MIN TYP 85 MAX 125 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS IGSS ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current VGS(TH) ID(ON) Static Drain-Source On-Resistance RDS(ON) TEST CONDITIONS VGS =0V, ID =250µA VGS =0V, VDS =16V VGS =±4.5V, VDS =0V VGS = ±8V, VDS =0V 20 VDS =VGS, ID =250µA VGS =4.5V, VDS =5V VGS=4.5V, ID =6.5A VGS =2.5V, ID =5.5A VGS =1.8V, ID =5A 0.4 30 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS =0V, VDS =10V, f =1MHz Reverse Transfer Capacitance CRSS Gate Resistance RG VGS =0V , VDS =0V, f =1MHz SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS =5V, VDS =10V RL =10Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =10V,VGS =4.5V,ID =6.5A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS =1A, VGS =0V Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF =6.5A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR Note: Surface mounted on 1 in2 copper pad of FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±1 ±10 V µA µA µA 0.6 1 18 21 26 22 26 34 910 250 230 1.5 1100 270 250 pF pF pF Ω 30 75 335 210 155 12 14 50 85 360 250 170 ns ns ns ns nC nC nC 0.76 1 V 2.5 A 17.7 6.7 V A mΩ mΩ mΩ ns nC 2 of 3 QW-R502-325.E UT3416 Power MOSFET TYPICAL CHARACTERISTICS Power Dissipatio vs. Ambient Temperature ds (o n )L 100us R Drain current, ID (A) 10 im it 100 1ms 1 10ms 0.1 DC 0.01 TA=25ºC 0.1 1 10 100 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-325.E