AOS Semiconductor Product Reliability Report AOTF11C60, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOTF11C60. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOTF11C60 passes AOS quality and reliability requirements. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Appendix: Test data I. Product Description: The AOTF11C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOTF11C60L Details refer to the datasheet. II. Die / Package Information: AOTF11C60 Standard sub-micron 600V N-Channel MOSFET Package Type TO220F Lead Frame Bare Cu Die Attach Soft solder Bonding Al wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOTF11C60 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@250°c Temp = 150°c , Vgs=100% of Vgsmax - 12 lots 168hrs 500 hrs 1000 hrs 3 lots 4 lots Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 3 lots 4 lots 77 pcs / lot HAST 130°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 96 hrs 9 lots Pressure Pot 121°c , 29.7psi, RH=100% 96 hrs HTGB HTRB Temperature Cycle -65°c to 150°c , air to air, 250 / 500 cycles Lot Attribution Total Sample size Number of Failures Reference Standard 2112pcs 0 JESD22A113 539pcs 0 JESD22A108 0 JESD22A108 495pcs 0 JESD22A110 (Note A*) 9 lots 55 pcs / lot 693pcs 0 JESD22A102 (Note A*) 77 pcs / lot 0 JESD22A104 77 pcs / lot 539pcs 12 lots (Note A*) 924pcs 77 pcs / lot IV. Reliability Evaluation FIT rate (per billion): 4.16 MTTF = 27426 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOTF11C60). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate (FIT) = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (6x77x500 +8x77x1000) x259] = 4.16 9 8 MTTF = 10 / FIT = 2.40 x 10 hrs = 27426 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 x 10-5eV / K 130 deg C 150 deg C 2.59 1 3