AOS Semiconductor Product Reliability Report AOTF10N50FD, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOTF10N50FD. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOTF10N50FD passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Details refer to the datasheet. II. Die / Package Information: AOTF10N50FD Standard sub-micron 500V, 10A N-Channel MOSFET with Fast Recovery Diode Package Type TO220F Lead Frame Bare Cu Die Attach Soft solder Bonding Al wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOTF10N50FD Test Item Test Condition Time Point Lot Attribution Total Sample size MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - 12 lots 2112pcs 0 JESD22A113 168hrs 500 hrs 1000 hrs 2 lots 3 lots 3 lots 616pcs 0 JESD22A108 HTRB Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs (Note A*) 2 lots 3 lots 3 lots 77 pcs / lot 616pcs 0 JESD22A108 HAST 130 , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 96 hrs (Note A*) 9 lots 77 pcs / lot 495pcs 0 JESD22A110 Pressure Pot 121°c , 29.7psi, RH=100% 96 hrs (Note A*) 9 lots 55 pcs / lot 693pcs 0 JESD22A102 (Note A*) 77 pcs / lot 0 JESD22A104 HTGB Temperature Cycle -65°c to 150°c , air to air, 250 / 500 cycles 12 lots (Note A*) Number of Failures 924pcs Reference Standard 77 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 5 MTTF = 23972 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOTF10N50FD). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (4x77x168 +6x77x500 +6x77x1000) x258] = 5 9 8 MTTF = 10 / FIT =2.10 x 10 hrs = 23972 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3