Datasheet

AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
30V
46A
RDS(ON) (at VGS=10V)
< 5.9mΩ
RDS(ON) (at VGS = 4.5V)
< 11.9mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
TO252 DPAK: AOD514
ID (at VGS=10V)
TO251A IPAK: AOI514
D
TO251B (IPAK short lead): AOY514
TopView
Bottom View
Bottom View
Top View
D
D
G
D
S
D
G
S
G
G
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Units
V
±20
V
36
A
17
IDSM
TA=70°C
Maximum
30
163
IDM
TA=25°C
Continuous Drain
Current
D
46
ID
TC=100°C
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
S
S
D
A
13
IAS
25
A
Avalanche energy L=0.1mH C
EAS
31
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev.6.0: July 2013
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
50
-55 to 175
Typ
16
41
2.5
www.aosmd.com
°C
Max
20
50
3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD514/AOI514/AOY514
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
30
1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
5
1.6
VGS=10V, ID=20A
100
nA
2.4
V
4.3
5.9
5.4
7.5
11.9
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
8.5
gFS
Forward Transconductance
VDS=5V, ID=20A
91
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
0.7
mΩ
mΩ
S
1
V
46
A
1187
pF
483
pF
60
VGS=0V, VDS=0V, f=1MHz
µA
2
RDS(ON)
TJ=125°C
Units
V
VDS=30V, VGS=0V
IGSS
Max
1.5
pF
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18
Qg(4.5V) Total Gate Charge
8.8
nC
4.1
nC
VGS=10V, VDS=15V, ID=20A
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
7.3
ns
tr
Turn-On Rise Time
10.5
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
21.8
ns
5
ns
14.7
ns
nC
24
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: July 2013
www.aosmd.com
Page 2 of 6
AOD514/AOI514/AOY514
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
80
VDS=5V
80
7V
5V
4V
60
ID(A)
ID (A)
60
40
40
125°C
20
25°C
20
VGS=3.0V
0
0
0
1
2
3
4
0
5
12
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.6
10
VGS=4.5V
8
6
4
VGS=10V
2
VGS=10V
ID=20A
1.4
1.2
1
VGS=4.5V
ID=20A
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
9
1.0E+00
IS (A)
125°C
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.6.0: July 2013
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD514/AOI514/AOY514
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=20A
8
1400
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
Coss
400
2
200
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
300
1000.0
10µs
100.0
10.0
100µs
1ms
DC
1.0
Power (W)
10µs
RDS(ON)
ID (Amps)
Crss
0
200
TJ(Max)=150°C
TC=25°C
100
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton
on/T
TJ,PK
J,PK=TC
C+PDM
DM.ZθJC
θJC.RθJC
θJC
1
InIndescending
descendingorder
order
D=0.5,
D=0.5,0.3,
0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
RθJC
θJC=3°C/W
0.1
Single Pulse
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.6.0: July 2013
www.aosmd.com
Page 4 of 6
AOD514/AOI514/AOY514
60
60
50
50
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
40
30
20
10
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
/T
D=T
on
TJ,PK=T
=TA+P
+PDM.Z
.ZθJA.RθJA
T
J,PK
A
DM θJA.RθJA
RθJA
=50°C/W
R
=64°C/W
θJA
descendingorder
order
InIndescending
D=0.5,0.3,
0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
D=0.5,
0.1
0.01
Single
Pulse
Single
Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.6.0: July 2013
www.aosmd.com
Page 5 of 6
AOD514/AOI514/AOY514
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.6.0: July 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6