AOD4158P 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application ID (at VGS=10V) 30V 46A RDS(ON) (at VGS=10V) < 9mΩ RDS(ON) (at VGS = 4.5V) < 13.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial TO252 (DPAK) TopView D Bottom View D G D S D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C V A 145 13 IDSM TA=70°C ±20 34 IDM TA=25°C Continuous Drain Current Units V 46 ID TC=100°C Maximum 30 A 11 IAS 25 A Avalanche energy L=0.1mH C EAS 31 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.4.0: March 2014 2.5 Steady-State Steady-State RθJA RθJC W 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s W 15 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 32 Typ 15 40 3.7 www.aosmd.com °C Max 20 50 4.7 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ Max 30 Units V VDS=30V, VGS=0V 1 µA IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 2 2.4 V VGS=10V, ID=20A 5.5 7.3 9 9.4 11.5 10.3 13.5 RDS(ON) TJ=55°C Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 7 91 0.7 mΩ mΩ S 1 V 35 A 850 1150 1500 pF 300 500 800 pF 15 60 150 pF 0.7 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 nC Qg(4.5V) Total Gate Charge 8.8 nC 4.1 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge 3.6 nC Qgs Gate Source Charge 4.1 nC Qgd Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 7.3 ns 10.5 ns 21.8 ns 5 ns 14.7 15 24 36 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: March 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 80 VDS=5V 80 7V 5V 4V 60 ID(A) ID (A) 60 40 40 125°C 20 25°C 20 VGS=3.0V 0 0 0 1 2 3 4 0 5 15 2 3 4 5 6 Normalized On-Resistance 1.6 VGS=4.5V 12 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 9 6 VGS=10V 3 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 9 6 25°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.4.0: March 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 8 1400 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 Coss 400 2 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10µs 100.0 10µs RDS(ON) limited 100µs 1ms DC 1.0 Power (W) 10.0 5 300 1000.0 ID (Amps) Crss 0 200 TJ(Max)=175°C TC=25°C 100 TJ(Max)=175°C TC=25°C 0.1 0.0 0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=T /T D=Ton on/T T =T C+P .Z θJC.R TJ,PK +PDM .RθJC J,PK=TC DM.ZθJC θJC 1 InIndescending descendingorder order D=0.5, D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse R RθJC =3°C/W θJC=4.7°C/W 0.1 Single Pulse Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.4.0: March 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 30 Current rating ID(A) Power Dissipation (W) 40 20 10 40 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 10000 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 45 TA=25°C 40 VBR(DSS)(V) Power (W) 1000 100 35 30 10 25 1 1E-05 0.001 0.1 10 20 1000 -60 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T /T D=T on TJ,PK=T =TA+P +PDM.Z .ZθJA.R .RθJA T J,PK 1 A DM θJA -20 20 60 100 140 180 Tj (° °C) VBR(DSS)=f(Tj); ID=1mA Figure 15: Drain-source breakdown voltage (Note E) descendingorder order InIndescending D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse D=0.5, θJA RθJA=64°C/W =50°C/W R θJA 0.1 0.01 Single Pulse Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.4.0: March 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.4.0: March 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6