SK50GB065 # * +, -. Absolute Maximum Ratings Symbol Conditions IGBT /0( #1 * +, - $ #1 * 5+, - $9: IGBT Module SK50GB065 344 / ,6 7 # * 84 - 64 7 34 7 ; +4 / #1 * 5+, - 54 @ # * +, - 36 7 # * 84 - 68 7 $9:* + $ / * <44 /= /%0 > +4 /= /0( ? 344 / Units # * +, - /%0( SEMITOP® 2 Values Inverse Diode $A #1 * 5,4 - $A9: $A9:* + $A $A(: * 54 = ' 7 #1 * 5,4 - +44 7 Module $9:( Preliminary Data 7 #'1 # Features ! "#! !" !# $%# & & ' Typical Applications* ( $' ( )"( / 7. 5 B !64 BBB C5,4 - !64 BBB C5+, - +,44 / # * +, -. Characteristics Symbol Conditions IGBT min. typ. max. Units < 6 , / /%0 /%0 * /0. $ * 5.6 7 $0( /%0 * 4 /. /0 * /0( #1 * +, - 4.4466 7 $%0( /0 * 4 /. /%0 * +4 / #1 * +, - +64 7 /04 0 /%0 * 5, / /0 $ * 34 7. /%0 * 5, / /0 * +,. /%0 * 4 / #1 * +, - 5.5 #1 * 5+, - 5.5 / / #1 * +,- 5, D #1 * 5+,- 5E #1 * +,- 'B + #1 * 5+,- 'B +.+ / * 5 :F <.+ 4.< A A D +., / 4.58 0 34 <4 5.5 ++4 +4 84 64 5.6 +84 +3 G 4.H 4.E G 4.8, IJK 9% * 53 D 9% * 53 D 0 91! $%# / * <44/ $* 647 #1 * 5+, - /%0*;5,/ A GB 1 12-05-2008 DIL © by SEMIKRON SK50GB065 Characteristics Symbol Conditions Inverse Diode /A * /0 $A * ,4 7= /%0 * 4 / /A4 min. typ. max. Units #1 * +, - 'B 5.6, 5.H / #1 * 5,4 - 'B 5.6 5.H, / 4.8, 4.E #1 * 5+, - 55 53 #1 * 5+, - 64 <.3 7 @ 4.,, G #1 * +, - #1 * 5+, - A ® SEMITOP 2 IGBT Module SK50GB065 Preliminary Data Features ! "#! !" !# $%# & & ' / #1 * +, - D $99: L $A * ,4 7 J * !5444 7J@ 0 /* <44/ 91! 5.5 : M + / 5E D IJK This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* ( $' ( )"( GB 2 12-05-2008 DIL © by SEMIKRON SK50GB065 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 12-05-2008 DIL © by SEMIKRON SK50GB065 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 12-05-2008 DIL © by SEMIKRON SK50GB065 UL recognized file no. E 63 532 #<+ ( . ". N + # <+ 5 % 12-05-2008 DIL © by SEMIKRON