datasheet

SK50GB065
# * +, -. Absolute Maximum Ratings
Symbol Conditions
IGBT
/0(
#1 * +, -
$
#1 * 5+, -
$9:
IGBT Module
SK50GB065
344
/
,6
7
# * 84 -
64
7
34
7
; +4
/
#1 * 5+, -
54
@
# * +, -
36
7
# * 84 -
68
7
$9:* + $
/ * <44 /= /%0 > +4 /=
/0( ? 344 /
Units
# * +, -
/%0(
SEMITOP® 2
Values
Inverse Diode
$A
#1 * 5,4 -
$A9:
$A9:* + $A
$A(:
* 54 = '
7
#1 * 5,4 -
+44
7
Module
$9:(
Preliminary Data
7
#'1
#
Features
!
"#! !"
!# $%#
& & '
Typical Applications*
(
$'
(
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/
7. 5 B
!64 BBB C5,4
-
!64 BBB C5+,
-
+,44
/
# * +, -. Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
<
6
,
/
/%0
/%0 * /0. $ * 5.6 7
$0(
/%0 * 4 /. /0 * /0(
#1 * +, -
4.4466
7
$%0(
/0 * 4 /. /%0 * +4 /
#1 * +, -
+64
7
/04
0
/%0 * 5, /
/0
$ * 34 7. /%0 * 5, /
/0 * +,. /%0 * 4 /
#1 * +, -
5.5
#1 * 5+, -
5.5
/
/
#1 * +,-
5,
D
#1 * 5+,-
5E
#1 * +,-
'B
+
#1 * 5+,-
'B
+.+
/
* 5 :F
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4.<
A
A
D
+.,
/
4.58
0
34
<4
5.5
++4
+4
84
64
5.6
+84
+3
G
4.H
4.E
G
4.8,
IJK
9% * 53 D
9% * 53 D
0
91!
$%#
/ * <44/
$* 647
#1 * 5+, -
/%0*;5,/
A
GB
1
12-05-2008 DIL
© by SEMIKRON
SK50GB065
Characteristics
Symbol Conditions
Inverse Diode
/A * /0
$A * ,4 7= /%0 * 4 /
/A4
min.
typ.
max.
Units
#1 * +, -
'B
5.6,
5.H
/
#1 * 5,4 -
'B
5.6
5.H,
/
4.8,
4.E
#1 * 5+, -
55
53
#1 * 5+, -
64
<.3
7
@
4.,,
G
#1 * +, -
#1 * 5+, -
A
®
SEMITOP 2
IGBT Module
SK50GB065
Preliminary Data
Features
!
"#! !"
!# $%#
& & '
/
#1 * +, -
D
$99:
L
$A * ,4 7
J * !5444 7J@
0
/* <44/
91!
5.5
:
M
+
/
5E
D
IJK
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
(
$'
(
)"(
GB
2
12-05-2008 DIL
© by SEMIKRON
SK50GB065
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
12-05-2008 DIL
© by SEMIKRON
SK50GB065
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
12-05-2008 DIL
© by SEMIKRON
SK50GB065
UL recognized file
no. E 63 532
#<+ ( . ". N +
# <+
5
%
12-05-2008 DIL
© by SEMIKRON