SK60GB125
% , -. /) Absolute Maximum Ratings
Symbol Conditions
IGBT
(0+
%1 , -. /
&
%1 , 3-. /
&89
3-44
(
.3
5
% , 64 /
7.
5
344
5
: -4
(
%1 , 3-. /
34
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% , -. /
.@
5
% , 64 /
76
5
&89, - &
( , 744 (; ('0 < -4 (;
(0+ = >44 (
Units
% , -. /
('0+
SEMITOP® 3
Values
Inverse Diode
IGBT Module
SK60GB125
&"
%1 , 3.4 /
&"89
&"89, - &"
&"+9
, 34 ; *
5
%1 , 3.4 /
..4
5
Module
&89+
Preliminary Data
5
%*1
%
Features
! " #$% &'% (
) * Typical Applications*
+
&*
+
!$+
(
5) 3 C
AB4 CCC D3.4
/
AB4 CCC D3-.
/
-.44
(
% , -. /) Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
B).
.).
>).
(
('0
('0 , (0) & , - 5
&0+
('0 , 4 () (0 , (0+
%1 , -. /
4)44>
5
&'0+
(0 , 4 () ('0 , -4 (
%1 , -. /
744
5
(
(04
0
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(0
& , .4 5) ('0 , 3. (
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3)B
3)E
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7>
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F
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B7
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*C
7)-
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*C
7)6.
(
, 3 9G
7)7
4).
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"
4)--
"
0
64
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6)7>
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--
H
7)7-
H
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8' , 77 F
8' , 77 F
0
81A
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&, B.5
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('0,:3.(
F
7)@
4)>
(
IJK
GB
1
12-05-2008 DIL
© by SEMIKRON
SK60GB125
Characteristics
Symbol Conditions
Inverse Diode
(" , (0
&" , .4 5; ('0 , 4 (
("4
min.
(
%1 , 3-. /
*C
3)6
(
(
IGBT Module
SK60GB125
3
3)-
%1 , 3-. /
3>
--
%1 , 3-. /
B4
6
5
?
-
H
%1 , -. /
&889
L
&" , .4 5
J , A644 5J?
0
(, >44(
81A
9
M
Units
-
%1 , -. /
"
SEMITOP 3
max.
%1 , -. /
*C
%1 , 3-. /
®
typ.
(
F
-)-.
74
F
4)E
IJK
-).
#
Preliminary Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
! " #$% &'% (
) * Typical Applications*
+
&*
+
!$+
GB
2
12-05-2008 DIL
© by SEMIKRON
SK60GB125
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
12-05-2008 DIL
© by SEMIKRON
SK60GB125
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
12-05-2008 DIL
© by SEMIKRON
SK60GB125
UL recognized file
no. E 63 532
%-@ + ) $) N -
% -@
5
'
12-05-2008 DIL
© by SEMIKRON