datasheet

SK50GB12T4T
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Absolute Maximum Ratings
Symbol Conditions
IGBT
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Values
Inverse Diode
IGBT Module
SK50GB12T4T
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Features
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Characteristics
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1
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
Characteristics
Symbol Conditions
Inverse Diode
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®
SEMITOP 3
IGBT Module
SK50GB12T4T
min.
typ.
max.
Units
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Features
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Typical Applications*
Remarks
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GB-T
2
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
! 26 >- !
,
# ! #! #N )?
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1,
chapter IX.
! 26
5
@
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describe only the usual characteristics of products to be expected in typical applications, which
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23-03-2016 MS
© by SEMIKRON