SEMIKRON SK75GB12T4T

SK75GB12T4T
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Absolute Maximum Ratings
Symbol Conditions
IGBT
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Units
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SEMITOP® 3
Values
Inverse Diode
IGBT Module
SK75GB12T4 T
. ' 02* +
56
56' 7 8 -6
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Module
>56-?
Target Data
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Features
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Typical Applications*
Remarks
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Characteristics
Symbol Conditions
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typ.
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GB-T
1
05-10-2009 DIL
© by SEMIKRON
SK75GB12T4T
Characteristics
Symbol Conditions
Inverse Diode
$ ' $%
' 2* : $% ' 1 $
$1
®
SEMITOP 3
IGBT Module
SK75GB12T4 T
min.
typ.
max.
Units
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0&7
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71
F79*M
C
Temperature sensor
5011
'011+ >5)*'*LC?
Target Data
Features
! " #
!
Typical Applications*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Remarks
$%&! & $ ' # ( (!
GB-T
2
05-10-2009 DIL
© by SEMIKRON
SK75GB12T4T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
05-10-2009 DIL
© by SEMIKRON
SK75GB12T4T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
05-10-2009 DIL
© by SEMIKRON
SK75GB12T4T
! 27 >- !
,
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! 27
5
@
05-10-2009 DIL
© by SEMIKRON