datasheet

SKM400GAR12T4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
616
A
Tc = 80 °C
474
A
400
A
ICnom
ICRM
SEMITRANS® 3
Fast IGBT4 Modules
SKM400GAR12T4
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
1200
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
440
A
Tc = 80 °C
329
A
400
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
•
•
•
•
Electronic welders at fsw up to 20 kHz
DC/DC – converter
Brake chopper
Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
IFRM
IFRM = 3xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1980
A
-40 ... 175
°C
Tc = 25 °C
440
A
Tc = 80 °C
329
A
400
A
Tj
Freewheeling diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 3xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1980
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 400 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
2.50
2.88
m
3.75
4.00
m
5.8
6.5
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 15.2 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
Tj = 150 °C
5
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
24.6
nF
f = 1 MHz
1.62
nF
f = 1 MHz
1.38
nF
2260
nC
1.9

GAR
© by SEMIKRON
Rev. 3 – 03.09.2013
1
SKM400GAR12T4
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
SEMITRANS® 3
Fast IGBT4 Modules
SKM400GAR12T4
rF
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
Electronic welders at fsw up to 20 kHz
DC/DC – converter
Brake chopper
Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Qrr
Err
Rth(j-c)
chiplevel
IRRM
Qrr
Err
Rth(j-c)
typ.
chiplevel
max.
Unit
220
ns
Tj = 150 °C
47
ns
Tj = 150 °C
33
mJ
Tj = 150 °C
505
ns
Tj = 150 °C
78
ns
Tj = 150 °C
42
mJ
0.072
K/W
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.3
2.5
m
3.1
3.4
m
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 8800 A/µs T = 150 °C
j
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
min.
Tj = 150 °C
per IGBT
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
chiplevel
IRRM
Features
•
•
•
•
Rth(j-c)
Conditions
VCC = 600 V
IC = 400 A
VGE = ±15 V
RG on = 1 
RG off = 1 
di/dton = 9700 A/µs
di/dtoff = 4300 A/µs
450
A
68
µC
30.5
mJ
0.14
K/W
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.3
2.5
m
3.1
3.4
m
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 8800 A/µs T = 150 °C
j
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
per Diode
450
A
68
µC
30.5
mJ
0.14
K/W
20
nH
Module
LCE
RCC'+EE'
15
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
TC = 25 °C
0.25
TC = 125 °C
0.5
0.02
to terminals M6
m
m
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
GAR
2
Rev. 3 – 03.09.2013
© by SEMIKRON
SKM400GAR12T4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3 – 03.09.2013
3
SKM400GAR12T4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 3 – 03.09.2013
© by SEMIKRON
SKM400GAR12T4
SEMITRANS 3
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 03.09.2013
5