Datasheet

AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
General Description
Product Summary
The AOD9N50 & AOI9N50 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
TO252
DPAK
Top View
VDS
600V@150℃
ID (at VGS=10V)
9A
RDS(ON) (at VGS=10V)
< 0.86Ω
100% UIS Tested!
100% Rg Tested!
TO251A
IPAK
Top View
Bottom View
D
Bottom View
D
D
G
S
G
S
G
S
D
S
G
D
S
G
AOD9N50
AOI9N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
TC=100°C
C
Maximum
500
Units
V
±30
V
9
ID
5.7
A
IDM
27
Avalanche Current C
IAR
3.8
A
Repetitive avalanche energy C
EAR
216
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
dv/dt
433
5
178
mJ
V/ns
W
1.4
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev 0: Feb 2012
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
Typical
45
Maximum
55
Units
°C/W
0.5
0.5
0.7
°C/W
°C/W
RθJC
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Page 1 of 6
AOD9N50/AOI9N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.56
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
3.3
µA
3.9
4.5
nΑ
V
0.86
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
0.71
gFS
Forward Transconductance
VDS=40V, ID=4.5A
9
VSD
Diode Forward Voltage
IS=1A,VGS=0V
S
0.72
IS
Maximum Body-Diode Continuous Current
9
A
ISM
Maximum Body-Diode Pulsed Current
27
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
760
962
1160
pF
65
98
130
pF
4.5
8
12
pF
1.5
3.2
5
Ω
15
19.5
24
nC
VGS=10V, VDS=400V, ID=9A
Qgs
Gate Source Charge
4.6
nC
Qgd
Gate Drain Charge
7.1
nC
tD(on)
Turn-On DelayTime
24
ns
tr
Turn-On Rise Time
44
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=9A,dI/dt=100A/µs,VDS=100V
260
332
400
Qrr
Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
2.8
3.5
4.5
VGS=10V, VDS=250V, ID=9A,
RG=25Ω
55
ns
35
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Feb 2012
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AOD9N50/AOI9N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
100
10V
-55°C
VDS=40V
10
6.5V
6V
10
125°C
ID(A)
ID (A)
8
6
4
1
5.5V
25°C
2
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
3
1.7
2.5
VGS=10V
1.4
RDS(ON) (Ω
Ω)
Normalized On-Resistance
2.0
1.1
0.8
0.5
10
VGS=10V
ID=4.5A
2
1.5
1
0.5
0
0.2
0
4
8
12
16
-100
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
ID=30A
40
125°C
1E+00
1
IS (A)
BVDSS (Normalized)
1E+01
1.1
125°
1E-01
25°C
1E-02
0.9
25°
1E-03
0.8
1E-04
-100
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev 0: Feb 2012
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0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1
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AOD9N50/AOI9N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=400V
ID=4.5A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
1
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
30
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000
100
10µs
100µs
1
1ms
DC
10ms
0.1
TJ(Max)=150°C
TC=25°C
800
Power (W)
RDS(ON)
limited
10
ID (Amps)
1
600
400
200
TJ(Max)=150°C
TC=25°C
0
0.01
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.7°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb 2012
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Page 4 of 6
AOD9N50/AOI9N50
200
10
160
8
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
80
40
6
4
2
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note B)
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
TA=25°C
Power (W)
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: Feb 2012
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Page 5 of 6
AOD9N50/AOI9N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 0: Feb 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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