AOD5N40/AOI5N40 400V,4.2A N-Channel MOSFET General Description Product Summary The AOD5N40 & AOI5N40 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View Bottom View VDS 500V@150℃ ID (at VGS=10V) 4.2A RDS(ON) (at VGS=10V) < 1.6Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View Top View D D D G G S S G AOI5N40 AOD5N40 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C S D D S G G S Maximum 400 Units V ±30 V 4.2 ID 2.8 A IDM 10 Avalanche Current C IAR 1.7 A Repetitive avalanche energy C EAR 43 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 86 5 78 mJ V/ns W 0.63 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev1: Jan 2012 PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 38 Maximum 55 Units °C/W 1.33 0.5 1.6 °C/W °C/W www.aosmd.com Page 1 of 6 AOD5N40/AOI5N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 500 V ID=250µA, VGS=0V 0.4 V/ oC VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ±100 3.4 µA 4 4.5 nΑ V 1.6 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 1.25 gFS Forward Transconductance VDS=40V, ID=1A 5 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4.2 A ISM Maximum Body-Diode Pulsed Current 10 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=320V, ID=4.2A S 0.77 260 331 400 pF 25 42 60 pF 1.5 3 5.5 pF 2 4 6 Ω 5.5 6.9 8.5 nC 1.5 2.0 2.5 nC 1 2.3 3.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=4.2A,dI/dt=100A/µs,VDS=100V 125 160 200 Qrr Body Diode Reverse Recovery Charge IF=4.2A,dI/dt=100A/µs,VDS=100V 0.7 0.93 1.2 Body Diode Reverse Recovery Time VGS=10V, VDS=200V, ID=4.2A, RG=25Ω 16.5 ns 15 ns 24 ns 11.5 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.7A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Jan 2012 www.aosmd.com Page 2 of 6 AOD5N40/AOI5N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 100 10V VDS=40V 7V -55°C 10 125°C ID(A) ID (A) 6 6V 4 2 1 0.1 25°C VGS=5.5V 0 0.01 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 Normalized On-Resistance 6.0 5.0 4.0 RDS(ON) (Ω Ω) 4 VGS=10V 3.0 2.0 1.0 0.0 VGS=10V ID=1A 2 1.5 1 0.5 0 0 2 4 6 8 -100 10 1.2 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 1.0E+00 40 1.1 125°C 1.0E-01 1 25°C IS (A) BVDSS (Normalized) ID=30A 125° 1.0E-02 0.9 1.0E-03 25° 0.8 1.0E-04 -100 Rev1: Jan 2012 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AOD5N40/AOI5N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 15 Ciss VDS=320V ID=4.2A Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 10 Crss 3 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 10 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 10 1 1ms DC TJ(Max)=150°C TC=25°C 600 Power (W) 10µs 100µs RDS(ON) limited ID (Amps) 1 400 10ms 0.1 0.1s TJ(Max)=150°C TC=25°C 0.01 200 0 1 10 100 1000 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: Jan 2012 www.aosmd.com Page 4 of 6 AOD5N40/AOI5N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 5.0 4.0 60 Current rating ID(A) Power Dissipation (W) 70 50 40 30 20 3.0 2.0 1.0 10 0 0.0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note B) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 1000 TJ(Max)=150°C TA=25°C Power (W) 800 600 400 200 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev1: Jan 2012 www.aosmd.com Page 5 of 6 AOD5N40/AOI5N40 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev1: Jan 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6