AOS Semiconductor Product Reliability Report AOI2610, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOI2610. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOI2610 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AOI2610 Standard sub-micron 60V N-Channel MOSFET TO251A Bare Cu Solder Paste Al & Au wire Epoxy resin with silica filler Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 - 5313 pcs 0 JESD22-A113 96 hours 924 pcs 0 JESD22-A110 1000 hours 924 pcs 0 JESD22-A101 MSL Precondition HAST H3TRB 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) 130°C , 85%RH, 33.3 psia, Vds = 80% of Vdsmax Up to 42V 85°C , 85%RH, Vds = 80% of Vdsmax Up to 100V Autoclave 121°C , 29.7psia, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 HTSL Temp = 150°C 1000 hrs 924 pcs 0 JESD22-A103 Power 15000 693 pcs 0 AEC Q101 Tj = 100°C cycles Cycling Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 2.86 MTTF = 39912 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 2.86 9 MTTF = 10 / FIT = 39912 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3