Datasheet

AOD2610/AOI2610
60V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
60V
46A
RDS(ON) (at VGS=10V)
< 10.7mΩ
RDS(ON) (at VGS=4.5V)
< 13.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-251A
IPAK
TO-252
DPAK
Top View
Top View
Bottom View
D
Bottom View
D
D
D
D
G
S
S
G
G
D
S
S
D
G
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD2610
AOI2610
TO-252
TO-251A
Tape & Reel
Tube
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
TA=25°C
Continuous Drain
Avalanche Current
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: December 2014
IAS
36
A
EAS
65
mJ
72
V
71.5
2.5
Steady-State
Steady-State
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
35.5
PDSM
TA=70°C
A
8
PD
TA=25°C
Power Dissipation A
A
10
VSPIKE
TC=100°C
V
140
IDSM
C
±20
36
IDM
TA=70°C
Current
Units
V
46
ID
TC=100°C
Maximum
60
RθJA
RθJC
-55 to 175
Typ
15
41
1.7
www.aosmd.com
°C
Max
20
50
2.1
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.4
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
nA
2.0
2.5
V
8.7
10.7
15.7
18.9
10.7
13.5
mΩ
1
V
46
A
85
0.72
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
V
5
VGS=10V, ID=20A
VDS=5V, ID=20A
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
IDSS
RDS(ON)
Typ
S
2007
VGS=0V, VDS=30V, f=1MHz
f=1MHz
0.6
mΩ
pF
177
pF
12.5
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
20.6
30
nC
Qg(4.5V)
Total Gate Charge
8.5
13
nC
Qgs
Gate Source Charge
5
nC
Qgd
Gate Drain Charge
2.2
nC
tD(on)
Turn-On DelayTime
8.5
ns
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
3.5
ns
27
ns
3
ns
IF=20A, dI/dt=500A/µs
19
ns
nC
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
69.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2014
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
100
4.5V
VDS=5V
4V
80
80
60
ID(A)
ID (A)
60
3.5V
40
40
125°C
25°C
20
20
VGS=3V
0
0
0
1
2
3
4
1
5
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
14
2.4
Normalized On-Resistance
2.2
RDS(ON) (mΩ)
12
VGS=4.5V
10
8
VGS=10V
VGS=10V
ID=20A
2
1.8
1.6
1.4
VGS=4.5V
ID=20A
1.2
1
0.8
6
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
24
1.0E+02
ID=20A
1.0E+01
20
1.0E+00
16
IS (A)
RDS(ON) (mΩ)
125°C
125°C
1.0E-01
25°C
1.0E-02
12
1.0E-03
8
25°C
1.0E-04
4
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2014
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=30V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2000
1500
1000
2
500
Coss
Crss
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
50
60
500
RDS(ON)
limited
10.0
10µs
100µs
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
DC
400
Power (W)
10µs
100.0
ID (Amps)
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
300
200
100
0.1
1
VDS (Volts)
10
0
0.0001 0.001 0.01
100
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.1°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2014
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
TA=100°C
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
10
TA=125°C
80
60
40
20
1
0
1
10
100
1000
0
25
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
175
10000
60
TA=25°C
50
Power (W)
Current rating ID(A)
1000
40
30
100
20
10
10
0
0
25
50
75
100
125
150
175
1
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
0.001
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2014
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: December 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6