Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1797
PNP SILICON TRANSISTOR
POWER TRANSISTOR

FEATURES
* Low Saturation Voltage.
VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA
* Excellent DC Current Gain Characteristics

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1797G-x-AA3-R
2SA1797G-x-AB3-R
2SA1797L-x-T9N-B
2SA1797G-x-T9N-B
2SA1797L-x-T9N-K
2SA1797G-x-T9N-K
2SA1797L-x-TN3-R
2SA1797G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter

Package
SOT-223
SOT-89
TO-92NL
TO-92NL
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
MARKING
SOT-89
2SA1797G
SOT-223
Date Code
1
TO-252
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
TO-92NL
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2SA1797

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
SYMBOL
VCBO
VCEO
VEBO
DC
PULSE(Note 1)
TO-92NL
SOT-223
SOT-89
TO-252
IC
PC
RATINGS
-50
-50
-6
-2
-5
1
0.8
0.5
1.9
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
W
W
C
C
Junction Temperature
TJ
Storage Temperature
TSTG
Note: 1. Single pulse, PW=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Note: Measured using pulse current.

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
fT
COB
TEST CONDITIONS
IC = -50A
IC = -1mA
IE = -50A
VCB = -50V
VEB = -5V
IC/IB = -1A/-50mA (Note)
VCE = -2V, IC=-0.5A (Note)
VCE = -2V, IE=0.5A, f=100MHz
VCB = -10V, IE=0A, f=1MHz
MIN
-50
-50
-6
120
TYP
MAX UNIT
V
V
V
-0.1
A
-0.1
A
-0.15 -0.35
V
400
200
MHz
36
pF
CLASSIFICATION OF hFE
RANK
RANGE
A
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
200-400
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TYPICAL CHARACTERISTICS
800m
600m
400m
С
-40°
-2m
-1m
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE (V)
0 1 2 3 4 5 6 7 8 9 10
Collector to Emitter Voltage, VCE (V)
Collector Saturation voltage, VCE(SAT) (V)
200m
0
TA =
7 mA
A
6m
5mA
4mA
3mA
2mA
1mA
1.2
1
5°С
9mA
8mA
VCE=2V
TA =2
IB=10mA
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-5m
=1
00
°С
1.6
1.4
TA=25°С
Grounded Emitter Propagation
Characteristics
TA
1.8
Grounded Emitter Output
Characteristics
Collector Current, IC (mA)
Collector Current, IC (A)
2.0
DC Current Gain, hFE

PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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