Datasheet

UNISONIC TECHNOLOGIES CO., LTD
T2096
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR

DESCRIPTION
The T2096 is a NPN Silicon Planar Transistors in TO-251
package. It is intended for high voltage, switching power supply and
industrial applications.

FEATURES
* Pb-free package is available
* Collector-Emitter voltage: VCEO = 400V
* Pulse collector current to 4A

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
T2096L-TM3-T
T2096G-TM3-T
T2096L-TN3-R
T2096G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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T2096

NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
DC Collector Current
Pulse Collector Current (Note 2)
RATINGS
UNIT
800
V
800
V
400
V
8
V
1
A
2
A
4
A
TA=25C
1
Collector Dissipation
W
PC
TC=25C
15
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width ≤300μS, Duty Cycle≤10%

SYMBOL
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE 1
hFE 2
fT
Cob
tON
tSTG
tF
TEST CONDITIONS
IC =1mA, IE =0
IC =5mA, RBE=∞
IE =1mA, IC =0
IC =1A, IB =0.2A
IC =1A, IB =0.2A
VCB =400V, IE =0
VEB =5V, IC =0
VCE =5V, IC =1mA
VCE =5V, IC =0.2A
VCE =10V, IC =0.2A
VCB =10V, f =1MHz
IC =1.0A, IB1 =0.05A
IB2 = -0.5A, RL =200Ω
VCC=200V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
800
400
8
TYP
MAX
0.8
1.5
10
10
45
120
UNIT
V
V
V
V
V
μA
μA
180
20
20
0.5
2.5
0.3
MHz
pF
μs
μs
μs
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T2096

NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
IB1
IB2
PW=20μS
D. C≤1%
OUTPUT
RB
INPUT
50Ω
RL
VR
+
+
100μF
470μF
VBE= -5V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VCC=200V
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T2096
NPN SILICON TRANSISTOR
Collector Current, IC (A)
Collector Current, IC (A)
TYPICAL CHARACTERISTICS
■
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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