Datasheet

UNISONIC TECHNOLOGIES CO., LTD
13003DE
Preliminary
NPN SILICON TRANSISTOR
SILICON TRIPLE DIFFUSION
NPN BIPOLAR TRANSISTORS
„
DESCRIPTION
The UTC 13003DE is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC 13003DE is suitable for electronic ballasts and the
general power switch circuit, etc.
„
FEATURES
* High collector-base breakdown voltage
* High reliability
* Low reverse leakage current
„
EQUIVALENT CIRCUIT
C
B
E
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13003DEL-x-T60-F-K
13003DEG-x-T60-F-K
13003DEL-x-T92-A-B
13003DEG-x-T92-A-B
13003DEL-x-T92-A-K
13003DEG-x-T92-A-K
Note: Pin Assignment: B: Base C: Collector
E: Emitter
Package
TO-126
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Bulk
Tape Box
Bulk
13003DEL-T60-F-B
„
(1)Packing Type
(1) B: Bluk, K: Bulk
(2)Pin Assignment
(2) refer to Pin Assignment
(3)Package Type
(3) T60: TO-126, T92: TO-92
(4)Lead Free
(4) L: Lead Free, G: Halogen Free
MARKING
TO-126
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-92
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„
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Continuous Collector Current
IC
1.3
A
Power Dissipation
PD
0.8
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
„
SYMBOL
θJA
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note 1)
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
Low current and high current hFE2 hFE1 ratio
hFE1/ hFE2
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
Storage Time
tS
Rise Time
tR
Fall Time
tF
Transition Frequency
fT
Diode Forward Voltage
VF
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%
„
RATING
156
TEST CONDITIONS
IC=0.1mA
IC=1mA
IE=0.1mA
VCB=600V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
IC=0.2A, VCE=5.0V
hFE1: VCE=5V, IC=5mA
hFE2: VCE=5V, IC=0.2A
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
MIN TYP MAX
600
400
9
0.1
0.1
0.1
15
30
0.75
2
IC=0.2A, VCE=10V, f=1MHz
IF=1A
0.9
0.22
1
UI9600, IC=0.1A
UNIT
V
V
V
mA
mA
mA
0.8
1.5
4
1
1
5
1.5
V
V
μs
μs
μs
MHz
V
CLASSIFICATION OF hFE
RANK
RANGE
A
15 ~ 20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
20 ~ 25
C
25 ~ 30
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Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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