UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DH is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light. FEATURES * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-T92-A-K Note: Pin Assignment: B: Base Halogen Free 13003DHG-x-TM3-T 13003DHG-x-T60-F-K 13003DHG-x-T92-A-B 13003DHG-x-T92-A-K C: Collector E: Emitter Package TO-251 TO-126 TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E E C B E C B Packing Tube Bulk Tape Box Bulk 13003DHL-T60-F-B (1)Packing Type (1) T: Tube, B: Bluk, K: Bulk (2)Pin Assignment (2) refer to Pin Assignment (3)Package Type (3) TM3: TO-251, T60: TO-126, T92: TO-92 (4)Lead Free (4) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R223-011.c 13003DH Preliminary NPN SILICON TRANSISTOR MARKING INFORMATION PACKAGE MARKING TO-251 TO-126 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R223-011.c 13003DH Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current RATINGS UNIT 600 V 400 V 9 V 1.8 A TA=25°C 1.25 W Power Dissipation PD TC=25°C 50 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Cut-Off Current Emitter-Base Cut-Off Current DC Current Gain (Note 1) SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE Low current and high current hFE2 hFE1 ratio hFE1/ hFE2 Collector-Emitter Saturation Voltage (Note) VCE(SAT) Base-Emitter Saturation Voltage (Note) VBE(SAT) Storage Time tS Rise Time tR Fall Time tF Transition Frequency fT Diode Forward Voltage VF Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2% TEST CONDITIONS IC=0.1mA IC=1mA IE=0.1mA VCB=600V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 IC=0.2A, VCE=5.0V hFE1: VCE=5V, IC=5mA hFE2: VCE=5V, IC=0.2A IC=1A, IB=0.25A IC=1A, IB=0.25A MIN TYP MAX 600 400 9 0.1 0.1 0.1 15 30 0.75 0.9 0.30 0.9 0.8 1.2 5 1 1 V V μs μs μs MHz 2.5 V 3 UI9600，IC=0.1A IC=0.1A, VCE=10V, f=1MHz IF=1.5A UNIT V V V mA mA mA 5 CLASSIFICATION OF hFE RANK RANGE A 15 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 20 ~ 25 C 25 ~ 30 3 of 4 QW-R223-011.c 13003DH Preliminary NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R223-011.c