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Application Note
Calculating thermal resistance
Light Emitting Diode
of LEDs
Contents
1. Objective
2. Features
3. Measurement Method and Procedures
4. LED Mounting
5. Calculation
6. Conclusion
This document contains tentative information; the contents may change without notice.
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Application Note
1. Objective
The thermal resistance of LEDs can be obtained by the junction temperature (TJ) estimated from
the forward voltage (VF) and the input power, since VF changes due to the ambient temperature
(TA). To ensure accuracy and repeatability, this application note describes the other measurement
methodology of the thermal resistance of LEDs in natural convection as described in JESD51-2 by
JEDEC (Joint Electron Device Engineering Council).
2. Features
Measurements of the thermal resistance vary depending on the ambient temperature, the
LED-mounting method, and the board construction. To minimize the measurement variation,
Light Emitting Diode
Nichia utilizes the measurement methods by controlling the following items:
Table 1 Measurement Conditions and Advantages
Control Item
Box as described in JESD51-2
Temperature
(no airflow , natural convection)
Voltage Measurement
Qty of LED
Board
Condition
Design
Advantages
Stable temperature
4 wire channel
No impact of contact resistance
1 pc.
Stable temperature
Unified design of the board size and
Minimizing the variation due to
the pattern
the board design
3. Measurement Method and Procedures
The temperature coefficient and the change ratio of VF can be measured as follows.
3-1. Measurement of Temperature Coefficient
Put an LED into a constant temperature chamber and measure the VF according to the TA
change.
- Increase the TA from 25°C at a regular interval of 20°C.
- To minimize the heat generation from the LED die and increase the measurement repeatability,
apply 1 mA to each die. The measurement current (IM) is determined by being multiplied by the
circuit connected in parallel.
(e.g. 2 dice in series and 3 dice in parallel; IM = 1 mA × 3 =3 mA)
* The TA shall be increased till it exceeds the TJ at the rated current.
* To regard TA as being the same as TJ, measure the VF after a while.
Figure 1 shows the relation between TA and VF.
Herein, the slope of the line corresponds to the temperature coefficient.
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Light Emitting Diode
Forword Voltage(V)
Application Note
Ambient Temperature(℃)
Figure 1
Relation between TA and VF
3.2 Change Ratio of VF
The change ratio of VF can be obtained by increasing TJ at the rated current.
1) Put an LED into natural convection within an enclosure (cf. Figure 2).
2)
3)
Apply IM to the LED and measure the VF1.
Make the LED generate heat by applying IF. (IM + IF = rated current)
4)
Measure the VP and VF2 and stop applying IM.
Please refer to Figure 3 (Page 4) for the measurement timing in 2) to 4) above.
* Apply IF at the pulse interval of 10µ, 100µ seconds,・・・; 10 times longer.
* To measure RƟJS, connect a thermocouple to the Ts measuring point with solder paste and
measure the Ts. (cf. Section 4)
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Light Emitting Diode
Application Note
Test Fixture (Front View)
Test Fixture (Side View)
Position of LED (the center of the box)
TA
Measuring Point
Test Fixture (Front View)
The temperatures shall be measured in a closed environment with the front covered by a board.
The support fixture depends on the test board; Left: FR-4, Right: Aluminum.
Figure 2
Test Enclosure Assembly in accordance with JESD51-2
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Application Note
Voltage
VP
VF 1
VF 2
Light Emitting Diode
Time
Heating Time
(10μsec,100μsec,…)
I M ON
I F ON
I M OFF
I F OFF
Figure 3
Measurement Timing of VF
4. LED Mounting
Mount an LED on a test board. When the input power is high, mount the LED on an aluminum
board (cf. Figure 4). On the other hand, when the input power is low, mount the LED on an FR-4
(cf. Figure 5) (*TJ= 85°C)
TS Measuring Point
Patterns on Copper Foil
Resist
Picture
Board Depth: 1.5mm, Insulating Layers’ Depth: 120μm, Copper Foil Depth: 105μm
Figure 4
Aluminum Board (NVSW119B)
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Application Note
φ0.85 hole × 108
B
D
Close up
TS Measuring point
Light Emitting Diode
1st Layer
2nd Layer
4th Layer
3rd Layer
Picture -Completed Board
- Board Depth: 1.6 mm, Copper Foil Depth: 70 μm (1st and 4th layer), 35 μm (2nd and 3rd layer)
- Diameter of Through Holes: 85 μm, Diameter of Through Hole Land: 125 μm
- The 4th layer above was seen from the reverse side of the board.
- The electrical conduction is provided by the connection between anode (at B on 2nd layer) and cathode (at D
on 3rd layer) through the via holes (Through Holes).
Figure 5 Glass Epoxy Board (e.g. NS2W757A)
* Ts measuring point shall be 1mm outside the land pattern.
* Please refer to the specifications concerning the recommended location of copper pattern and
Ts measuring point, since they depend on each model.
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Application Note
5. Calculation
RƟJA and RƟJS can be obtained by the following formulae:
- K (℃/ V ) 
where,
T A 2  T A1
V F (T A1 )  V F (T A 2 )
K = temperature coefficient
TA1, TA2 = TA in measuring each temperature coefficient
VF(TA1), VF(TA2) = VF(TA) in measuring each temperature coefficient
VF(TA2) < VF2 < VF(TA1), TA1 < TA2
- ΔTJ (℃)  (VF 1  VF 2 )  K
Light Emitting Diode
- P (W )  ( I M  I F )  VP
- RθJA (℃/W ) 
ΔTJ
P
- T J (℃) ΔT J  T A
Herein, TA is the ambient temperature before the test.
- RθJS (℃/W ) 
TJ  TS
P
RƟJA= thermal resistance between TJ and TA, RƟJS = thermal resistance between TJ and TS
RƟJA and RƟJS shall be calculated in a thermally stable condition after the LED is operated.
When the transient thermal resistance should be measured before the thermal stability, RƟJA can
be obtained by the above described formula. Please refer to Figure 6 for the transient thermal
resistance curve.
Figure 6 Transient Thermal Resistance Curve
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Application Note
6. Conclusion
Light Emitting Diode
If you are concerned, please contact us.
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