Photomicrosensor (Transmissive) EE-SJ5-B Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 5-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. 15.4 ■ Absolute Maximum Ratings (Ta = 25°C) 2.1 × 0.5 Aperture holes (see note) 5±0.2 Item Emitter Optical axis 7.2±0.2 Detector Four, 0.25 9.2±0.3 Four, 0.5 2.54±0.2 Cross section AA Note: There is no difference in size between the slot on the emitter and that on the detector. Internal Circuit K Unless otherwise specified, the tolerances are as shown below. Dimensions E Terminal No. Name A K C Anode Cathode Collector E Emitter ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. Rated value IF Soldering temperature C A Ambient temperature Symbol Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 112 EE-SJ5-B Photomicrosensor (Transmissive) ■ Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Collector−Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = 25°C Ta = 70°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) IF = 50 mA Ta = −30°C Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (°C) Ta = 25°C Ta = 25°C VCE = 10 V Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Dark current ID (nA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 80 Distance d (mm) d 60 40 20 0 −2.0 Load resistance RL (kΩ) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Relative light current IL (%) Response time tr, tf (μs) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SJ5-B Photomicrosensor (Transmissive) 113