Photomicrosensor (Transmissive) EE-SX198 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 3-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. 12.2±0.3 ■ Absolute Maximum Ratings (Ta = 25°C) 5±0.1 Item Four, C0.3 0.5±0.1 Emitter Optical axis 10±0.2 8.5±0.1 Two, C1±0.3 6.5+0.1 Detector 6.2±0.5 Four, 0.5±0.1 Four, 0.25±0.1 2.5±0.1 Cross section BB 9.2±0.3 Cross section AA Ambient temperature Internal Circuit K Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) C Soldering temperature A E Terminal No. A K C E Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Name Anode Cathode Collector Emitter Rated value Forward current Unless otherwise specified, the tolerances are ±0.2 mm. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Symbol Value Condition VF 1.2 V typ., 1.4 V max. Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 5 V Dark current ID 2 nA typ., 200 nA max. VCE = 20 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Forward voltage IF = 30 mA Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 94 EE-SX198 Photomicrosensor (Transmissive) ■ Engineering Data IF = 20 mA IF = 10 mA Collector−Emitter voltage VCE (V) Response time tr, tf (μs) VCC = 5 V Ta = 25°C Load resistance RL (kΩ) Response Time Measurement Circuit Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70°C IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Distance d (mm) 120 IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 30 mA Ta = 25°C Dark current ID (nA) IF = 40 mA Ta = −30°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 50 mA Ta = 25°C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Ta = 25°C Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Input Output 90 % 10 % Input Output EE-SX198 Photomicrosensor (Transmissive) 95