UNISONIC TECHNOLOGIES CO., LTD UF8010 Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control. FEATURES * RDS(ON) :12mΩ (Typ.) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective COSS to simplify design SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UF8010L-TA3-T UF8010G-TA3-T TO-220 UF8010L-TF3-T UF8010G-TF3-T TO-220F UF8010L-TQ2-T UF8010G-TQ2-T TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 8 QW-R502-348.E UF8010 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-348.E UF8010 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage VGS ±20 V Continuous Drain Current (VGS=10V,TC=25°C) ID 80 (Note 2) A Pulsed Drain Current IDM 320 A Single Pulse (Note 2) EAS 310 mJ Avalanche Energy 26 mJ Repetitive EAR Avalanche Current IAR 45 A Peak Diode Recovery dv/dt (Note 3) dv/dt 16 V/ns TO-220 / TO-263 260 W Power Dissipation(TC=25°C) TO-220F 54 W PD TO-220 / TO-263 1.8 W/°C Derating above 25°C 0.36 W/°C TO-220F Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ + 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ = 25°C, L = 0.31mH, RG =25Ω, IAS = 45A. 3. ISD≤45A, di/dt≤110A/μs, VDD≤BVDSS, TJ≤ 150°C THERMAL DATA PARAMETER Junction to Ambient TO-220 / TO-263 Junction to Case TO-220F SYMBOL θJA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.57 2.3 UNIT °C/W °C/W °C/W 3 of 8 QW-R502-348.E UF8010 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS STATIC CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250μA Drain-Source Leakage Current IDSS VDS=100V,VGS =0V Gate-Source Forward Current VGS = 20 V IGSS Gate-Source Reverse Current VGS = -20 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 45A (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25 V,VGS =0V, f =1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=80V, VGS=10V Gate-Source Charge QGS ID= 80A (Note 1) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDS =30V,ID = 1A, RG = 39Ω Rise Time tR VGS = 10V (Note 1) Turn-Off Delay Time tD(OFF) Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current (Note 1) IS=80 A ,VGS =0 V, Drain-Source Diode Forward Voltage VSD TJ = 25°C (Note 1) Reverse Recovery Time tRR IF=80A, VDD=50V, TJ = 150°C di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT 100 2.0 12 20 200 -200 V μA nA nA 4.0 15 V mΩ 3617 620 59 399 41 96 174 370 757 392 99 460 pF pF pF 450 200 450 850 450 nC nC nC ns ns ns ns 80 A 320 A 1.3 V 150 700 ns nC Note: Pulse width ≤ 300μs; duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-348.E UF8010 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-348.E UF8010 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 8 QW-R502-348.E UF8010 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-348.E UF8010 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-348.E