PD - 95723A
IRF7380PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
RDS(on) max
73m:@VGS = 10V
80V
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
ID
3.6A
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
Units
80
V
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
3.6
2.9
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
2.0
W
Linear Derating Factor
0.02
W/°C
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
2.3
-55 to + 150
V/ns
°C
TSTG
Storage Temperature Range
ID @ TA = 25°C
ID @ TA = 100°C
h
c
A
29
e
Thermal Resistance
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
Parameter
–––
42
°C/W
RθJA
Junction-to-Ambient (PCB Mount) *
–––
50
Notes through are on page 8
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1
07/09/08
IRF7380PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.09
–––
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 2.2A
f
RDS(on)
Static Drain-to-Source On-Resistance
–––
61
73
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 80V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
–––
–––
S
Conditions
gfs
Qg
Forward Transconductance
4.3
VDS = 25V, ID = 2.2A
Total Gate Charge
–––
15
23
Qgs
Gate-to-Source Charge
–––
2.9
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
4.5
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
9.0
–––
VDD = 40V
tr
Rise Time
–––
10
–––
td(off)
Turn-Off Delay Time
–––
41
–––
tf
Fall Time
–––
17
–––
VGS = 10V
Ciss
Input Capacitance
–––
660
–––
VGS = 0V
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
15
–––
Coss
Output Capacitance
–––
710
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
72
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
140
–––
VGS = 0V, VDS = 0V to 64V
ID = 2.2A
nC
VDS = 40V
f
ID = 2.2A
ns
RG = 24Ω
f
VDS = 25V
pF
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
dh
Typ.
Max.
Units
–––
75
mJ
–––
2.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.6
A
MOSFET symbol
ISM
(Body Diode)
Pulsed Source Current
–––
–––
29
A
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
trr
Reverse Recovery Time
–––
50
–––
ns
Qrr
Reverse Recovery Charge
–––
110
–––
nC
ton
Forward Turn-On Time
2
ch
D
G
S
f
TJ = 25°C, IF = 2.2A, VDD = 40V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7380PbF
100
100
10
BOTTOM
1
3.7V
0.1
0.01
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
10
BOTTOM
3.7V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.001
0.1
1
10
100
0.1
1000
1
Fig 1. Typical Output Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
2.5
10
T J = 150°C
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
0
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
1000
Fig 2. Typical Output Characteristics
100
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (Α)
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
7.0
I D = 3.6A
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7380PbF
100000
VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
C oss
100
Crss
10
ID= 2.1A
VDS= 16V
8
6
4
2
1
0
1
10
100
0
2
VDS, Drain-to-Source Voltage (V)
6
8
10
12
14
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
4
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
T J= 25 ° C
TJ = 150 ° C
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 64V
VDS= 40V
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
2.0
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7380PbF
4.0
RD
VDS
VGS
ID , Drain Current (A)
3.0
D.U.T.
RG
+
-V DD
10V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
1
+T A
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS(on) , Drain-to -Source On Resistance (m Ω)
IRF7380PbF
RDS (on) , Drain-to-Source On Resistance (mΩ)
95
90
85
80
VGS = 10V
75
70
65
60
55
50
0
5
10
15
20
25
30
800
700
600
500
400
300
ID = 3.6A
200
100
0
3.0
ID , Drain Current (A)
5.0
7.0
9.0
11.0
13.0
15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
200
VG
EAS, Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
160
BOTTOM
ID
1.0A
1.8A
2.2A
120
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7380PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
(;$03/(7+,6,6$1,5)026)(7
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5(&7,),(5
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)
'$7(&2'(<::
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRF7380PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 31mH
RG = 25Ω, IAS = 2.2A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2008
8
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