UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)= 30 V * ID=136 A * RDS(ON)= 4.5mΩ@VGS=10 V * RDS(ON) = 5.6mΩ@VGS=4.5 V SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT136N03L-TA3-R UT136N03G-TA3-T UT136N03L-TQ2-T UT136N03G-TQ2-T UT136N03L-TQ2-R UT136N03G-TQ2-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 5 QW-R502-459.a UT136N03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 136 A Pulsed Drain Current (Note1) IDM 400 A Single Pulsed Avalanche Energy (Note4) EAS 875 mJ Power Dissipation PD 100 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 1.4 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS (Note2) Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS=30 V,VGS =0 V VDS =0 V, VGS = ±20 V 30 VGS(TH) VDS =VGS, ID =250 µA VGS =10 V, ID =40 A VGS =4.5 V, ID =40 A 1 RDS(ON) DYNAMIC PARAMETERS (Note3) Input Capacitance CISS VDS =15V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note3) Total Gate Charge QG VDS =15V, VGS =5V, ID =16A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V, ID =1A, RGEN =6Ω V Turn-OFF Delay Time tD(OFF) GS =10 V Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20 A,VGS=0 V Drain-Source Diode Forward Current IS Note : 1. Pulse width limited by maximum junction temperature 2. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. 3. Guaranteed by design, not subject to production testing. 4. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 3.6 MAX UNIT 1 ±100 V µA nA 3 4.5 5.6 3800 800 600 60 20.8 22 25.7 10 128 34 V mΩ pF 72 nC 50 20 200 70 ns 1.5 90 V A 2 of 3 QW-R502-459.a UT136N03 Preliminary Power MOSFET TEST CIRCUIT AND WAVEFORM UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-459.a