UNISONIC TECHNOLOGIES CO., LTD UD4614 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4614 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UTC UD4614 may be used in H-bridge, inverters and other applications. FEATURES * N-Channel: 40V/6A RDS(ON) = 23.2mΩ (typ.) @ VGS =10V RDS(ON) = 32.6mΩ (typ.) @ VGS= 4.5V * P-Channel: -40V/-5A RDS(ON) = 34.7mΩ (typ.) @ VGS= -10V RDS(ON) = 50.6mΩ (typ.) @ VGS= -4.5V * Super high dense cell design * Reliable and Rugged SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UD4614L-S08-R UD4614G-S08-R www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package Packing SOP-8 Tape Reel 1 of 9 QW-R502-147.B UD4614 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-147.B UD4614 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) N-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation TC=25°C TC=25°C TC=25°C TC=100°C Junction Temperature Storage Temperature SYMBOL VDS VGS ID IDM RATINGS 40 ±20 6 20 2 1.28 +150 -55 ~ +150 PD TJ TSTG UNIT V V A A W W °C °C P-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) RATINGS UNIT -40 V ±20 V TC=25°C -5 A TC=25°C -20 A TC=25°C 2 W PD Power Dissipation TC=100°C 1.28 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDS VGS ID IDM THERMAL DATA PARAMETER Junction to Ambient (Note3) SYMBOL θJA MIN TYP 74 MAX 110 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge SYMBOL MIN BVDSS IDSS IGSS VGS=0V, ID=10mA VDS=32V, VGS=0V VDS=0V, VGS=±20V 40 VGS(TH) VDS=VGS, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=5A 1 RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VGS=0V,VDS=20V,f=1.0MHz VDS=20V, VGS=10V, RG=3Ω, RL=3.3Ω VDS=20V, VGS=10V, ID=6A TYP 2.3 23.2 32.6 MAX UNIT 1 ±100 V uA nA 3 31 45 V mΩ mΩ 404 95 37 pF pF pF 4.2 3.3 15.6 3 8.3 1.3 2.3 ns ns ns ns nC nC nC 3 of 9 QW-R502-147.B UD4614 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Diode Continuous Forward Current IS Reverse Recovery Time tRR IDS=6A, dI/dt=100A/μs Reverse Recovery Charge QRR MIN TYP 0.77 MAX UNIT 1 3 V A ns nC 20.5 14.5 P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-10mA VDS=-32V, VGS=0V VDS=0V, VGS=±20V -40 VGS(TH) VDS=VGS, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-2A -1 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=-20V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) VDS=-20V, VGS=-10V, Turn-ON Rise Time tR RG=3Ω, RL=4Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=-20V, VGS=-10V, ID=-5A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Diode Continuous Forward Current IS Reverse Recovery Time tRR IDS=-5A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width≤300us, duty cycle ≤2%. 2 3. Surface Mounted on 1in pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -1.9 34.7 50.6 MAX UNIT -1 ±100 V uA nA -3 45 63 V mΩ mΩ 657 143 63 pF pF pF 7.5 6.7 26 11.2 13.6 1.8 3.9 ns ns ns ns nC nC nC -0.75 22.3 15.2 -1 -3.2 V A ns nC 4 of 9 QW-R502-147.B UD4614 Power MOSFET TYPICAL CHARACTERISTICS N-CHANNEL On-Resign Characteristics Drain Current, ID(A) 25 10V Transfer Characteristics 20 5V VDS=5V 4.5V Drain Current, ID(A) 30 20 4V 15 10 VGS=3.5V 5 1 3 4 2 Drain Source Voltage, VDS(V) 10 125℃ 25℃ 5 0 5 2 2.5 3 3.5 4 Gate Source Voltage, VGS(V) 4.5 Capacitance (pF) Gate Source Voltage, VGS (V) Source Current, IS (A) On-Resistance, RDS(ON) (mΩ) 0 0 15 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-147.B UD4614 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Single Pulse Power Rating Junctionto-Ambient Maximum Forward Biased Safe Operating Area 40 100.0 TJ(Max)=150℃ TA=25℃ 10μs 30 100μs 10.0 1ms Power (w) Drain Current, ID (A) RDS (ON) Limited 10ms 10s 1.0 1s TJ(Max)=150℃ TA=25℃ 1 10 Drain Source Voltage, VDS (V) 0 0.001 100 0.01 0.1 1 10 Pulse Width (s) 100 1000 Normalized Transient Thermal Resistance,ZθJA 0.1 0.1 10 0.1s DC 20 On-Resistance vs. Drain Current and Gate Voltage On-Resistance, RDS(ON) (mΩ) 50 40 VGS=4.5V 30 VGS=10V 20 0 5 10 15 20 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R502-147.B UD4614 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Drain Current, -ID (A) Drain Current, -ID (A) P-CHANNEL On-Resistance vs. Gate-Source Voltage 160 1.0E+00 ID=-5A Source Current, -IS (A) On-Resistance, RDS(ON) (mΩ) 140 120 100 125℃ 80 60 40 2 5 6 7 8 9 4 Gate Source Voltage, -VGS (V) 1.0E-02 1.0E-03 10 1.0E-06 0.0 Gate-Charge Characteristics 800 6 4 COSS 0 0 15 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw CISS 400 200 5 10 Gate Charge, -QG (nC) 1.0 600 2 0 0.2 0.1 0.6 0.8 Source Drain Voltage, -VSD (V) Capacitance Characteristics 1000 VDS=-20V ID=-5A 8 25℃ 1.0E-04 Capacitance (pF) Gate Source Voltage, -VGS (V) 3 125℃ 1.0E-01 1.0E-05 25℃ 20 10 Body-Diode Characteristics 1.0E+01 CRSS 0 10 20 30 40 Drain Source Voltage, -VDS (V) 7 of 9 QW-R502-147.B UD4614 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Normalized Transient Thermal Resistance,ZθJA Power (W) Drain Current, -ID (A) On-Resistance vs. Drain Current and Gate Voltage 60 55 VGS=-4.5V 50 45 40 VGS=-10V 35 30 0 2 4 6 8 10 Drain Current, -ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-147.B UD4614 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-147.B