UNISONIC TECHNOLOGIES CO., LTD UT4822 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4822 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. The UT4822 is suitable for using as a load switch or in PWM applications. FEATURES 1 * 30V/8.5A * Low RDS(ON) * Reliable and Rugged DFN-8(5x6) SYMBOL (7) (8) D1 (5) (6) D2 (4) G2 (2) G1 S2 (3) S1 (1) ORDERING INFORMATION Ordering Number Note: SOP-8 UT4822G-S08-R UT7852G-K08-5060-R Pin Assignment: G: Gate D: Drain Package SOP-8 DFN-8(5×6) S: Source Pin Assignment 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel Tape Reel MARKING SOP-8 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd DFN-8(5×6) 1 of 6 QW-R502-149.G UT4822 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current RATINGS UNIT 30 V ±20 V 8.5 A 40 A SOP-8 2 W Power Dissipation PD DFN-8(5×6) 2.7 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) SYMBOL VDS VGS ID IDM THERMAL DATA PARAMETER Junction to Ambient SYMBOL SOP-8 DFN-8(5×6) RATINGS 110 46 θJA UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250uA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=250uA VGS=10V, ID=8.5A VGS=4.5V, ID=6A 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=15V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=15V, VGS=10V, ID=8.5A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=15V, VGS=10V, RG=3Ω, Turn-ON Rise Time tR RL =1.8Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V Reverse Recovery Time tRR IF = 8.5A, dIF /dt = 100 A/μs Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 1.8 13.4 21 MAX UNIT 1 ±100 V uA nA 3 16 26 V mΩ mΩ 1040 1250 180 110 pF pF pF 19.2 2.6 4.2 5.2 4.4 17.3 3.3 7.5 6.5 25 5 nC nC nC ns ns ns ns 3 A 1 21 10 V ns nC 0.76 16.7 6.7 23 2 of 5 QW-R502-149.G UT4822 Power MOSFET TYPICAL CHARACTERISTICS On-Resistance Characteristics 30 4V 10V 25 VDS=5V 1.60E+01 4.5V 20 Transfer Characteristics 2.00E+01 3.5V 1.20E+01 125°С 15 8.00E+00 25°С 10 VGS=3V 4.00E+00 5 Pulse width ≤80us, duty cycle ≤0.5%. 0 0 ID=8.5A Pulse width ≤80us, duty cycle ≤0.5%. 4 2 2.5 3 3.5 Gate Source Voltage, VGS (V) Body-Diode Characteristics 1.0E+01 1.0E+00 40 Source Current, IS (A) On-Resistance, RDS(ON) (mΩ) 5 On-Resistance vs. Gate-Source Voltage 50 30 125°С 20 1.0E-01 125°С 1.0E-02 25°С 1.0E-03 1.0E-04 Pulse width ≤80us, duty cycle ≤0.5%. 10 2 4 1.0E-05 8 Gate Source Voltage, VGS (V) 6 0.0 10 0.2 0.4 0.6 0.8 1.0 Source Drain Voltage, VSD (V) Capacitance Characteristics 1500 VDS=15V ID=8.5A 8 Pulse width ≤80us, duty cycle ≤0.5%. 25°С Gate-Charge Characteristics 10 Pulse width ≤80us, duty cycle ≤0.5%. 1250 CISS Capacitance (pF) Gate Source Voltage, VGS (V) 1 2 3 4 Drain Source Voltage, VDS (V) 0.00E+00 1.5 6 4 2 1000 750 500 COSS 250 Pulse width ≤80us, duty cycle ≤0.5%. 0 0 4 12 8 16 Gate Charge, QG (nC) 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw CRSS 0 0 5 10 15 20 25 30 Drain Source Voltage, VDS (V) 3 of 5 QW-R502-149.G UT4822 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Power (W) Drain Current, ID (A) Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,θJA 10 D=TON/T TJ,PK=TA+PDM.θJA.θJA θJA=62.5°С/W In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 1 PDM 0.1 TON T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) On-Resistance vs. Drain Current and Gate Voltage On-Resistance, RDS(ON) (mΩ) 26 24 22 VGS=4.5V 20 18 16 VGS=10V 14 12 10 0 5 10 15 Drain Current, ID (A) 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-149.G UT4822 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (µA) Drain Current, IDSS (µA) Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-149.G