AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO5803E/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO5803E and AO5803EL are electrically identical. -RoHS compliant -AO5803EL is Halogen Free Features VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V) D1 G1 D2 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain A, F Current TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead 1/5 C ±8 V ID -0.4 IDM -3 W 0.24 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 0.4 PD TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V -0.6 Pulsed Drain Current B A Maximum -20 RθJA RθJL Typ 275 360 300 °C Max 330 450 350 Units °C/W °C/W °C/W www.freescale.net.cn AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 IGSS Gate-Body leakage current VDS=0V, VGS=±4.5V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -3 TJ=55°C VGS=-4.5V, ID=-0.6A TJ=125°C µA -0.5 -0.9 V 0.62 0.8 0.87 1.1 A 1 Ω 1.25 Ω VDS=-5V, ID=-0.6A IS=-0.1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 0.9 -0.81 72 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS tD(on) Turn-On DelayTime VGS=-4.5V, VDS=-10V, RL=16.7Ω, RGEN=3Ω S -1 V -0.5 A 100 pF 17 pF 9 pF 60.5 ns 150 ns 612 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-0.6A, dI/dt=100A/µs, VGS=-9V 27 Qrr Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs, VGS=-9V 8.3 Body Diode Reverse Recovery Time Ω 0.96 Diode Forward Voltage Reverse Transfer Capacitance ±1 0.79 Forward Transconductance Output Capacitance µA VGS=-2.5V, ID=-0.5A gFS Crss -5 VGS=-1.8V, ID=-0.4A VSD Coss Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 436 ns 35 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 4: July 2011 2/5 www.freescale.net.cn AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 -6V -40°C VDS=-5V -4.5V 4 25°C -4V 2 -3.5V 3 -ID(A) -ID (A) -10V -3V 2 125°C 1 -2.5V 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 1 1.3 RDS(ON) (Ω ) Normalized On-Resistance VGS=-1.8V 1.1 1 VGS=-2.5V 0.9 0.8 0.7 VGS=-4.5V 0.6 0.5 4 5 VGS=-1.8V ID=-0.4A 1.40E+00 VGS=-4.5V ID=-0.6A 1.20E+00 VGS=-2.5V ID=-0.5A 1.00E+00 8.00E-01 6.00E-01 0 0.5 1 1.5 2 2.5 3 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+00 ID=-0.6A 1.1 1.0E-01 125°C 1 1.0E-02 125°C 0.9 -IS (A) RDS(ON) (Ω ) 3 1.60E+00 1.2 0.8 25°C 1.0E-03 -40°C 1.0E-04 0.7 25°C 1.0E-05 0.6 1.0E-06 0.5 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 5 VDS=-10V ID=-0.6A Ciss 80 Capacitance (pF) -VGS (Volts) 4 3 2 1 60 40 Coss Crss 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 1ms 1.00 20 100µs 10 10ms 0.1s 1s 10s TJ(Max)=150°C TA=25°C 12 Power (W) -ID (Amps) 15 14 TJ(Max)=150°C, T A=25°C RDS(ON) limited 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.00 0.10 5 DC 8 6 4 0.01 2 0 0.0001 0.00 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=330°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/5 www.freescale.net.cn AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn