UNISONIC TECHNOLOGIES CO., LTD UT5003 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UT5003 can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology. This device is suitable for use as a load switch or in PWM applications. FEATURES * N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A * P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A * Super high dense cell design * Reliable and rugged SYMBOL ORDERING INFORMATION Ordering Number Note: UT5003G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source Pin Assignment 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-167.B UT5003 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) N-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation Junction Temperature Storage Temperature TC=25°C TC=25°C SYMBOL VDSS VGSS ID IDM PD TJ TSTG RATINGS 30 ±20 7 20 2 +150 -55 ~ +150 UNIT V V A A W °C °C P-Channel: PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note3) TC=25°C ID -5 A Pulsed Drain Current (Note3) TC=25°C IDM -20 A Power Dissipation PD 2 W Junction Temperature TJ +150 V Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note3) SYMBOL θJA RATINGS 62.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS=0V, ID=250uA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=250uA VGS=10V, ID=7A RDS(ON) VGS=4.5V, ID=6A 1 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=15V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) VDS=10V, VGS=10V, ID≒1A, Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) RG=3Ω Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=0.5*BVDSS, VGS=10V, ID=7A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Diode Continuous Forward Current IS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 1.5 20.5 30 MAX UNIT 1 ±100 V uA nA 2.5 27.5 40 V mΩ mΩ 680 105 75 4.6 4 20 5 14 1.9 3.3 pF pF pF 7 6 30 8 ns ns ns ns nC nC nC 1 1.3 V A 2 of 7 QW-R502-167.B UT5003 Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-24V, VGS=0V VDS=0V, VGS=±20V -30 VGS(TH) VDS=VGS, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A -1 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-15V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) Turn-ON Rise Time tR VDS=-10V, VGS=-10V, ID≒1A, RG=3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=0.5*BVDSS, VGS=-10V, Gate-Source Charge QGS ID=-5A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Diode Continuous Forward Current IS Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤ 2%. 3. Surface Mounted on 1in 2 pad area, t ≤ 10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -1.5 37.5 62 MAX UNIT -1 ±100 V uA nA -2.5 45 80 V mΩ mΩ 780 145 79 7.7 5.7 20 9.5 15.1 2.1 4.0 pF pF pF 11.5 8.5 30 14 ns ns ns ns nC nC nC -1 -1.3 V A 3 of 7 QW-R502-167.B UT5003 Power MOSFET TYPICAL CHARACTERISTICS N-CHANNEL: On-Region Characteristics 10V 25 Drain Current,ID (A) 2.4 6.0V 5.0V 4.5V 20 Normalized Drain-Source OnResistance,RDS(ON) 30 4V 15 3.5V 10 5 VGS=3V 2.0 4V 1.8 4.5V 1.6 5.0V 1.4 6.0V 1.2 7.0V 10V 1.0 1 4 2 3 Drain Source Voltage,VDS (V) 5 0 6 12 18 24 30 Drain Current,ID (A) On-Resistance,RDS(ON) (Ω) Transfer Characteristics 30 100 25 TA=-55℃ 20 Reverse Drain Current,IS (A) VDS=10V Drain Current,ID (A) VGS=3.5V 2.2 0.8 0 Normalized Drain-Source OnResistance,RDS(ON) 0 On-Resistance Variation with Drain Current and Gate Voltage 25℃ 15 125℃ 10 5 0 Body Diode Forward Voltage Variation with Source Current and Temperature VGS=0V TA=125℃ 10 1 25℃ -55℃ 0.1 0.01 0.001 1 1.5 2.0 2.5 3.0 Gate-to-Source Voltage,VGS (V) 3.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Body Diode Forward Voltage,VSD (V) 4 of 7 QW-R502-167.B UT5003 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate Charge Characteristics 10 VDS=5V ID=7A Capacitance Characteristics 1000 10V 8 f=1MHZ VGS=V 900 800 15V CISS 700 6 600 500 400 4 300 200 2 COSS 100 0 0 4 8 12 Gate Charge,QG (nC) 1ms 10ms 100ms 100μs 1s 10s 1 DC VGS=10V Single Pulse RθJA=135℃/W TA=25℃ 0.01 0.1 1 Peak Transient Power,P(PK) (W) 50 10 5 10 15 20 25 30 Drain-to-Source Voltage,VDS (V) RDS(ON) Limit Drain Current,ID (A) 0 16 Maximum Safe Operating Area 100 0.1 CRSS 0 Single Pulse Maximum Power Dissipation Single Pulse RθJA=135℃/W TA=25℃ 40 30 20 10 0 10 0.001 100 Drain-Source Voltage,VDS (V) 0.01 0.1 1 10 Time,t1 (sec) 100 1000 Drain Current,-ID (A) Normalized Drain-Source OnResistance,RDS(ON) P-CHANNEL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-167.B UT5003 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On-Resistance Variation with Temperature Normalized Drain-Source OnResistance,RDS(ON) 1.6 ID=-5A 1.4 1.2 1.0 0.8 0.6 -50 TA=125℃ 0.05 2 100 25℃ TA=-55℃ 20 Reverse Drain Current,-IS (A) 25 15 125℃ 10 5 8 4 6 Gate-to-Source Voltage,-VGS (V) 10 Body Diode Forward Voltage Variation with Source Current and Temperature VGS=0V TA=125℃ 10 1 25℃ -55℃ 0.1 0.01 0.001 0 3.5 4.5 5.5 2.5 Gate-to-Source Voltage,-VGS (V) Gate Charge Characteristics 10 25℃ 0 VDS=-10V Drain Current,-ID (A) 0.1 -25 0 25 50 75 100 125 150 Junction TemperaturemTJ (℃) 30 ID=-5A 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Body Diode Forward Voltage,-VSD (V) Capacitance Characteristics 1200 VDS=-5V -10V 8 f=1MHZ VGS=V 1000 Capacitance,C (pF) Gate Source Voltage,-VGS (V) 0.15 Transfer Characteristics 0 1.5 On-Resistance Variation with Gateto-Source Voltage 0.2 ID=-5A VGS=-10V On-Resistance,RDS(ON) (Ω) -15V 6 4 CISS 800 600 400 COSS 2 200 CRSS 0 0 0 5 10 15 Gate Charge,QG (nC) 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 5 10 20 15 Drain-to-Source Voltage,-VDS (V) 6 of 7 QW-R502-167.B UT5003 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Maximum Safe Operating Area 100 50 Drain Current,-ID (A) RDS(ON) Limit 100μs 1ms 10 10ms 100ms 1s 10s 1 0.1 DC VGS=-10V Single Pulse RθJA=135℃/W TA=25℃ 0.01 0.1 1 Peak Transient Power,P(PK) (W) Single Pulse Maximum Power Dissipation Single Pulse RθJA=135℃/W TA=25℃ 40 30 20 10 0 10 100 0.01 0.1 1 10 Time,t1 (sec) 100 1000 Normalized Effective Transient Thermal Resistance,r (t) Drain-Source Voltage,-VDS (V) 0.001 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-167.B