STW8NC70Z N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC70Z ■ ■ ■ ■ ■ VDSS RDS(on) ID 700 V < 1.38 Ω 7A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. TO-247 APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (● ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Value Unit Drain-source Voltage (VGS = 0) Parameter 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ±25 V Drain Current (continuos) at TC = 25°C 7 A Drain Current (continuos) at TC = 100°C 4.4 A Drain Current (pulsed) 28 A Total Dissipation at TC = 25°C 160 W Derating Factor 1.28 W/°C Gate-source Current (*) ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 3 KV Peak Diode Recovery voltage slope 3 V/ns –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. (*)Limited only by maximum temperature allowed May 2001 1/8 STW8NC70Z THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Tl 0.78 °C/W 30 °C/W Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 7 A 250 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS ∆BVDSS/∆TJ Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Breakdown Voltage Temp. Coefficient ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 700 Unit V 1 V/°C VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA VGS = ±20V ±10 µA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 3.5 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 3 4 5 V 1.1 1.38 Ω 7 A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =3.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 7 S 1840 pF 140 pF 18 pF STW8NC70Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Qg Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 350V, ID = 3.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) Gate-Source Charge Qgd Gate-Drain Charge VDD = 560V, ID = 7 A, VGS = 10V Max. Unit 24 ns 8 ns 47 Total Gate Charge Qgs Typ. 66 nC 11 nC 19 nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 560V, ID = 7 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 11 ns 10 ns 19 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) Max. Unit 7 A 28 A 1.6 V 575 ns 5.8 µC 20 A GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance IGS = 50 mA 90 Ω BVGSO 25 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW8NC70Z Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance STW8NC70Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW8NC70Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW8NC70Z TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G H 10.9 15.3 0.429 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/8 STW8NC70Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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