ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
FEATURES AND BENEFITS
• Industry-leading total output accuracy achieved with new
piecewise linear digital temperature compensation of
offset and sensitivity
• Industry-leading noise performance through proprietary
amplifier and filter design techniques
• 120 kHz typical bandwidth
• 4.1 µs output rise time in response to step input current
• Integrated shield greatly reduces capacitive coupling
from current conductor to die due to high dV/dt signals,
and prevents offset drift in high-side, high voltage
applications
• Greatly improved total output error through digitally
programmed and compensated gain and offset over the
full operating temperature range
• Small package size, with easy mounting capability
• Monolithic Hall IC for high reliability
• Ultra-low power loss: 100 µΩ internal conductor
resistance
• Galvanic isolation allows use in economical, high-side
current sensing in high voltage systems
• 4.5 to 5.5 V, single supply operation
• Output voltage proportional to AC or DC currents
• Factory-trimmed for accuracy
• Extremely stable output offset voltage
Continued on the next page…
Package: 5-pin package (suffix CB)
pe d
Ty ste
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PFF
Leadform
TÜV America
Certificate Number:
U8V 14 05 54214 028
PSF
Leadform
DESCRIPTION
The Allegro™ ACS770 family of current sensor ICs provides
economical and precise solutions for AC or DC current sensing.
Typical applications include motor control, load detection and
management, power supply and DC-to-DC converter control,
inverter control, and overcurrent fault detection.
The device consists of a precision, low-offset linear Hall
circuit with a copper conduction path located near the die.
Applied current flowing through this copper conduction
path generates a magnetic field that is concentrated by a low
magnetic hysteresis core, then converted by the Hall IC into a
proportional voltage. Device accuracy is optimized through the
close proximity of the magnetic signal to the Hall transducer.
A precise, proportional output voltage is provided by the
low-offset, chopper-stabilized BiCMOS Hall IC, which is
programmed for accuracy at the factory. Proprietary digital
temperature compensation technology greatly improves the
IC accuracy and temperature stability without influencing the
high bandwidth operation of the analog output.
High level immunity to current conductor dV/dt and stray
electric fields is offered by Allegro proprietary integrated shield
technology for low output voltage ripple and low offset drift
in high-side, high voltage applications.
The output of the device has a positive slope (>VCC/2 for
bidirectional devices) when an increasing current flows through
the primary copper conduction path (from terminal 4 to terminal
5), which is the path used for current sampling. The internal
resistance of this conductive path is 100 µΩ typical, providing
low power loss.
The thickness of the copper conductor allows survival of the
device at high overcurrent conditions. The terminals of the
Continued on the next page…
Additional leadforms available for qualifying volumes
5V
Application 1: the ACS770 outputs an analog
signal, VOUT , that varies linearly with the
bidirectional AC or DC primary sampled current, IP , within the range specified. RF and
CF are for optimal noise management, with
values that depend on the application.
4
VCC
IP+
ACS770
IP
GND
5
1
2
CF
IP–
VIOUT
3
Typical Application
ACS770-DS, Rev. 4
CBYP
0.1 µF
RF
VOUT
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Features and Benefits (continued)
Description (continued)
• Undervoltage lockout for VCC below specification
• AEC Q-100 automotive qualified
• UL certified, File No. E316429
conductive path are electrically isolated from the signal leads (pins
1 through 3). This allows the ACS770 family of sensor ICs to be
used in applications requiring electrical isolation without the use of
opto-isolators or other costly isolation techniques.
The device is fully calibrated prior to shipment from the factory.
The ACS770 family is lead (Pb) free. All leads are plated with 100%
matte tin, and there is no Pb inside the package. The heavy gauge
leadframe is made of oxygen-free copper.
Selection Guide
Part Number1
Package
Terminals
Signal Pins
Primary Sampled
Current , IP
(A)
Sensitivity
Sens (Typ.)
(mV/A)
Current
Directionality
ACS770LCB-050B-PFF-T
Formed
Formed
±50
40.
Bidirectional
ACS770LCB-050U-PFF-T
Formed
Formed
50
80.
Unidirectional
ACS770LCB-100B-PFF-T
Formed
Formed
±100
20.
Bidirectional
ACS770LCB-100U-PFF-T
Formed
Formed
100
40.
Unidirectional
ACS770LCB-100U-PSF-T
Straight
Formed
100
40.
Unidirectional
ACS770KCB-150B-PFF-T
Formed
Formed
±150
13.3
Bidirectional
ACS770KCB-150B-PSF-T
Straight
Formed
±150
13.3
Bidirectional
ACS770KCB-150U-PFF-T
Formed
Formed
150
26.7
Unidirectional
ACS770KCB-150U-PSF-T
Straight
Formed
150
26.7
Unidirectional
ACS770ECB-200B-PFF-T
Formed
Formed
±200
10.
Bidirectional
ACS770ECB-200B-PSF-T
Straight
Formed
±200
10.
Bidirectional
ACS770ECB-200U-PFF-T
Formed
Formed
200
20.
Unidirectional
ACS770ECB-200U-PSF-T
Straight
Formed
200
20.
Unidirectional
1Additional
TOP
(°C)
Packing2
–40 to 150
–40 to 125
34 pieces
per tube
–40 to 85
leadform options available for qualified volumes.
for additional packing options.
2Contact Allegro
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
SPECIFICATIONS
Absolute Maximum Ratings
Characteristic
Rating
Unit
VCC
6
V
Reverse Supply Voltage
VRCC
–0.5
V
Forward Output Voltage
VIOUT
25
V
Forward Supply Voltage
Symbol
Reverse Output Voltage
VRIOUT
Output Source Current
IOUT(Source)
Output Sink Current
Nominal Operating Ambient Temperature
Maximum Junction
Storage Temperature
IOUT(Sink)
TOP
Notes
VIOUT to GND
Minimum pull-up resistor of 500 Ω, from VCC to VIOUT
–0.5
V
3
mA
10
mA
Range E
–40 to 85
ºC
Range K
–40 to 125
ºC
Range L
–40 to 150
ºC
TJ(max)
165
ºC
Tstg
–65 to 165
ºC
Rating
Unit
4800
VAC
990
VDC or Vpk
Isolation Characteristics
Characteristic
Symbol
Notes
Dielectric Strength Test Voltage*
VISO
Agency type-tested for 60 seconds per
UL standard 60950-1, 2nd Edition
Working Voltage for Basic Isolation
VWFSI
For basic (single) isolation per UL standard 60950-1, 2nd
Edition
Working Voltage for Reinforced Isolation
VWFRI
For reinforced (double) isolation per UL standard 609501, 2nd Edition
700
Vrms
636
VDC or Vpk
450
Vrms
*60-second testing is only done during the UL certification process. In production, Allegro conducts 1-second isolation testing according to UL 60950-1, 2nd Edition.
Thermal Characteristics may require derating at maximum conditions
Characteristic
Package Thermal Resistance
Symbol
Test Conditions*
Value
Unit
RθJA
Mounted on the Allegro evaluation board with 2800 mm2
(1400 mm2 on component side and 1400 mm2 on opposite
side) of 4 oz. copper connected to the primary leadframe
and with thermal vias connecting the copper layers.
Performance is based on current flowing through the
primary leadframe and includes the power consumed by
the PCB.
7
ºC/W
Notes
*Additional thermal information available on the Allegro website
Typical Overcurrent Capabilities1,2
Characteristic
Overcurrent
Symbol
IPOC
Rating
Unit
TA = 25°C, 1s duration, 1% duty cycle
1200
A
TA = 85°C, 1s duration, 1% duty cycle
900
A
TA = 150°C, 1s duration, 1% duty cycle
600
A
1Test
was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only.
2For more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
3
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
IP+
V+
VCC
To all subcircuits
Programming
Control
Temperature
Sensor
C BYP
EEPROM and
Control Logic
Dynamic Offset
Cancellation
Sensitivity Control
Offset Control
VIOUT
Signal Recovery
IP–
CL
GND
Functional Block Diagram
IP+
IP–
4
5
Terminal List Table
3
VIOUT
2
GND
1
VCC
Pin-out Diagram
Number
Name
1
VCC
Description
Device power supply terminal
2
GND
3
VIOUT
Signal ground terminal
4
IP+
Terminal for current being sampled
5
IP–
Terminal for current being sampled
Analog output signal
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
COMMON OPERATING CHARACTERISTICS valid at TOP = –40°C to 150°C, CBYP = 0.1 µF, and VCC = 5 V, unless
otherwise specified
Characteristic
Symbol
Test Conditions
Supply Voltage
VCC
Supply Current
ICC
Output open
Supply Zener Voltage
Power-On Delay1,2
Temperature Compensation
Power-On Time1
Undervoltage Lockout (UVLO)
Threshold1
UVLO Enable/Disable Delay
Time1,2
Power-On Reset Voltage1
Rise Time1,2
Propagation Delay Time1,2
Ratiometry1
1See
2See
4.5
5.0
5.5
V
–
10
15
mA
6.5
7.5
–
V
TA = 25°C, CBYP = open
–
90
–
µs
tTC
TA = 25°C, CBYP = open
–
90
–
µs
VUVLOH
TA = 25°C, VCC rising
–
3.8
–
V
VUVLOL
TA = 25°C, VCC falling
–
3
–
V
tUVLOE
TA = 25°C, CBYP = open, VCC Fall Time (5 V to 3 V) = 1 μs
–
75
–
µs
tUVLOD
TA = 25°C, CBYP = Open,
VCC Recover Time (3 V to 5 V) = 1 μs
–
14
–
µs
VPORH
TA = 25°C, VCC rising
–
2.9
–
V
VPORL
TA = 25°C, VCC falling
–
2.7
–
V
–
4.1
–
µs
–
2.4
–
µs
–
4.6
–
µs
tr
tPROP
BWi
Quiescent Output Voltage1
Unit
TA = 25°C, ICC = 30 mA
Internal Bandwidth
Primary Conductor Resistance
Max.
VZ
tRESPONSE
Output Load Capacitance
Typ.
tPOD
Response Time1,2
Output Load Resistance
Min.
IP step = 60% of IP+, 10% to 90% rise time, TA = 25°C,
CL = 0.47 nF
IP step = 60% of IP+, 20% input to 20% output, TA = 25°C,
CL = 0.47 nF
IP step = 60% of IP+, 80% input to 80% output, TA = 25°C,
COUT = 0.47 nF
–
120
–
kHz
RL
VIOUT to GND
–3 dB; TA = 25°C, CL = 0.47 nF
4.7
–
–
kΩ
CL
VIOUT to GND
–
–
10
nF
RPRIMARY
TA = 25°C
–
100
–
µΩ
VIOUT(QBI)
Bidirectional variant, IP = 0 A, TA = 25°C
–
VCC/2
–
V
VIOUT(QUNI)
VRAT
Unidirectional variant, IP = 0 A, TA = 25°C
VCC = 4.5 to 5.5 V
–
–
0.5
100
–
–
V
%
Characteristic Definitions section of this datasheet.
Timing Data Section of this data sheet
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X050B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Test Conditions
IP
Measured using full scale IP , TA = 25°C
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
Sensitivity Drift Over
Lifetime3
Noise4
Nonlinearity
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Typ.
Max.
Unit
–50
–
50
A
mV/A
39.04
40
40.96
39.04
40
40.96
mV/A
38.6
40
41.4
mV/A
–0.72
±0.24
0.72
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
10
–
mV
Measured using full scale and half scale IP,
–1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ΔSensLIFE
VNOISE
ELIN
VOE(TA)
Electrical Offset Voltage5,6
Min.
∆VOE(LIFE)
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 50 A
–
120
300
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 150°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
ΔETOT(LIFE)
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
6
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X050U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Test Conditions
IP
Measured using full scale IP , TA = 25°C
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
Sensitivity Drift Over
Lifetime3
Noise4
Nonlinearity
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Typ.
Max.
Unit
0
–
50
A
mV/A
78.08
80
81.92
78.08
80
81.92
mV/A
77.2
80
82.8
mV/A
–1.44
±0.48
1.44
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
20
–
mV
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ΔSensLIFE
VNOISE
ELIN
VOE(TA)
Electrical Offset Voltage5,6
Min.
∆VOE(LIFE)
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 50 A
–
120
300
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 150°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
ΔETOT(LIFE)
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
7
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X100B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
Min.
Typ.
Max.
–100
–
100
A
19.52
20
20.48
mV/A
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C
19.52
20
20.48
mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
19.3
20
20.7
mV/A
–0.36
±0.12
0.36
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
6
–
mV
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
SensTA
Sensitivity2
Sensitivity Drift Over Lifetime3
Noise4
Nonlinearity
ΔSensLIFE
VNOISE
ELIN
VOE(TA)
Electrical Offset Voltage5,6
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Test Conditions
IP
∆VOE(LIFE)
Measured using full scale IP , TA = 25°C
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
Unit
IERROM
IP = 0 A, TA = 25°C, after excursion of 100 A
–
170
400
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 150°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
ΔETOT(LIFE)
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift is
a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
8
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X100U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Sensitivity Drift Over Lifetime3
Noise4
Nonlinearity
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Typ.
Max.
Unit
0
–
100
A
39.04
40
40.96
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 150°C
39.04
40
40.96
mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
38.6
40
41.4
mV/A
–0.72
±0.24
0.72
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
12
–
mV
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ΔSensLIFE
VNOISE
ELIN
∆VOE(LIFE)
Measured using full scale IP , TA = 25°C
Min.
mV/A
VOE(TA)
Electrical Offset Voltage5,6
Test Conditions
IP
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 100 A
–
170
400
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 150°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
TOP = –40°C to 150°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
ΔETOT(LIFE)
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
9
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X150B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 125°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Test Conditions
IP
Measured using full scale IP , TA = 25°C
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 125°C
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
Sensitivity Drift Over
Lifetime3
Noise4
Nonlinearity
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Symmetry
Typ.
Max.
Unit
–150
–
150
A
mV/A
13.01
13.33
13.65
13.01
13.33
13.65
mV/A
12.86
13.33
13.8
mV/A
–0.24
±0.08
0.24
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
4
–
mV
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ΔSensLIFE
VNOISE
ELIN
VOE(TA)
Electrical Offset Voltage5,6
Min.
∆VOE(LIFE)
TOP = –40°C to 125°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 125°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 150 A
–
225
400
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 125°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
TOP = –40°C to 125°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
99
100
101
%
ΔETOT(LIFE)
ESYM
Over half-scale of IP
1See
Characteristic Performance Data page for parameter distributions over temperature range.
2This parameter may drift a maximum of ΔSens
LIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift is
a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
10
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X150U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 125°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Test Conditions
IP
Measured using full scale IP , TA = 25°C
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 125°C
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
Sensitivity Drift Over
Lifetime3
Noise4
Nonlinearity
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Typ.
Max.
Unit
0
–
150
A
mV/A
26.02
26.66
27.30
26.02
26.66
27.30
mV/A
25.73
26.66
27.59
mV/A
–0.48
±0.16
0.48
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
6
–
mV
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ΔSensLIFE
VNOISE
ELIN
VOE(TA)
Electrical Offset Voltage5,6
Min.
∆VOE(LIFE)
TOP = –40°C to 125°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 125°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 150 A
–
225
400
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 125°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
TOP = –40°C to 125°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
ΔETOT(LIFE)
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
11
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X200B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Sensitivity Drift Over Lifetime3
Noise4
Nonlinearity
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Typ.
Max.
Unit
–200
–
200
A
9.76
10
10.24
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 85°C
9.76
10
10.24
mV/A
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
9.65
10
10.35
mV/A
–0.18
±0.06
0.18
mV/A
TA= 25°C, 10 nF on VIOUT pin to GND
–
3
–
mV
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ΔSensLIFE
VNOISE
ELIN
∆VOE(LIFE)
Measured using full scale IP , TA = 25°C
Min.
mV/A
VOE(TA)
Electrical Offset Voltage5,6
Test Conditions
IP
TOP = –40°C to 85°C, shift after AEC Q100 grade 0
qualification testing
IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 200 A
–
250
575
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 85°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
ΔETOT(LIFE)
TOP = –40°C to 85°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift is
a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
12
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
X200U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC = 5 V, unless otherwise
specified
Characteristic
Primary Sampled Current
Symbol
SensTA
Sensitivity2
Test Conditions
IP
Measured using full scale IP , TA = 25°C
Sens(TOP)HT Measured using full scale IP , TOP = 25°C to 85°C
Sens(TOP)LT Measured using full scale IP , TOP = –40°C to 25°C
Sensitivity Drift Over
Lifetime3
Noise4
Nonlinearity
ΔSensLIFE
VNOISE
Electrical Offset Voltage Drift
Over Lifetime3
Magnetic Offset Error
Total Output Error7
Total Output Error Drift Over
Lifetime3
Typ.
Max.
Unit
0
–
200
A
mV/A
19.52
20
20.48
19.52
20
20.48
mV/A
19.3
20
20.7
mV/A
–0.36
±0.12
0.36
mV/A
mV
TA= 25°C, 10 nF on VIOUT pin to GND
–
6
–
Measured using full scale and half scale IP –1
–
1
%
IP = 0 A, TA = 25°C
–10
±4
10
mV
VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C
–10
±6
10
mV
VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C
–20
±6
20
mV
–5
±2
5
mV
ELIN
VOE(TA)
Electrical Offset Voltage5,6
TOP = –40°C to 85°C, shift after AEC Q100 grade 0
qualification testing
Min.
∆VOE(LIFE)
IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0
qualification testing
IERROM
IP = 0 A, TA = 25°C, after excursion of 200 A
–
250
575
mA
ETOT(TA)
Measured using full scale IP , TA = 25°C
–2.4
±0.5
2.4
%
ETOT(HT)
Measured using full scale IP , TOP = 25°C to 85°C
–2.4
±1.5
2.4
%
ETOT(LT)
Measured using full scale IP , TOP = –40°C to 25°C
–3.5
±2
3.5
%
ΔETOT(LIFE)
TOP = –40°C to 85°C, shift after AEC Q100 grade 0
qualification testing
–1.9
±0.6
1.9
%
1See
Characteristic Performance Data page for parameter distributions over temperature range.
parameter may drift a maximum of ΔSensLIFE over lifetime.
3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
4±3 sigma noise voltage.
5Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
6This parameter may drift a maximum of ΔV
OE(LIFE) over lifetime.
7This parameter may drift a maximum of ΔE
TOT(LIFE) over lifetime.
2This
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
13
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
ACS770xCB
CHARACTERISTIC PERFORMANCE DATA
Data Taken using the ACS770LCB-50B
Accuracy Data
Sensitivity versus Ambient Temperature
6
41.0
4
40.8
2
40.6
Sens (mV/A)
VOE (mV)
Electrical Offset Voltage versus Ambient Temperature
0
-2
40.4
40.2
40.0
-4
39.8
-6
39.6
-8
–50
39.4
-25
0
25
50
75
100
125
150
–50
-25
0
25
TA (°C)
50
75
100
125
150
TA (°C)
Nonlinearity versus Ambient Temperature
Magnetic Offset Error versus Ambient Temperature
0
250
-0.1
200
-0.3
IERROM (mA)
ELIN (%)
-0.2
-0.4
-0.5
-0.6
-0.7
150
100
50
-0.8
-0.9
–50
-25
0
25
50
75
100
125
0
–50
150
-25
0
25
TA (°C)
50
75
100
125
150
TA (°C)
Total Output Error versus Ambient Temperature
2.5
2.0
ETOT (%)
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
–50
-25
0
25
50
75
100
125
150
TA (°C)
Mean + 3 sigma
Mean
Mean – 3 sigma
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
14
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
ACS770xCB
Data Taken using the ACS770LCB-100B
Accuracy Data
Sensitivity versus Ambient Temperature
8
20.4
6
20.3
4
20.2
Sens (mV/A)
VOE (mV)
Electrical Offset Voltage versus Ambient Temperature
2
0
-2
20.1
20.0
19.9
-4
19.8
-6
19.7
19.6
-8
–50
-25
0
25
50
75
100
125
150
–50
-25
0
25
TA (°C)
Nonlinearity versus Ambient Temperature
400
-0.1
350
100
125
150
300
IERROM (mA)
-0.2
ELIN (%)
75
Magnetic Offset Error versus Ambient Temperature
0
-0.3
-0.4
-0.5
-0.6
-0.7
–50
50
TA (°C)
250
200
150
100
50
-25
0
25
50
75
100
125
0
–50
150
-25
0
TA (°C)
25
50
75
100
125
150
TA (°C)
Total Output Error versus Ambient Temperature
2.5
2.0
1.5
ETOT (%)
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
–50
-25
0
25
50
75
100
125
150
TA (°C)
Mean + 3 sigma
Mean
Mean – 3 sigma
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
15
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
ACS770xCB
Data Taken using the ACS770KCB-150B
Accuracy Data
Electrical Offset Voltage versus Ambient Temperature
13.60
6
13.55
Sens (mV/A)
8
4
VOE (mV)
Sensitivity versus Ambient Temperature
2
0
13.45
13.40
13.35
13.30
13.25
-2
13.20
-4
-6
–50
13.50
13.15
-25
0
25
50
75
100
125
13.10
–50
150
-25
0
25
TA (°C)
75
100
125
150
Magnetic Offset Error versus Ambient Temperature
450
-0.1
400
-0.2
350
-0.3
IERROM (mA)
ELIN (%)
Nonlinearity versus Ambient Temperature
0
-0.4
-0.5
-0.6
-0.7
-0.8
–50
50
TA (°C)
300
250
200
150
100
50
-25
0
25
50
75
100
125
0
–50
150
-25
0
25
TA (°C)
50
75
100
125
150
TA (°C)
Total Output Error versus Ambient Temperature
2.0
1.5
ETOT (%)
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
–50
-25
0
25
50
75
100
125
150
TA (°C)
Mean + 3 sigma
Mean
Mean – 3 sigma
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
16
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
ACS770xCB
Data Taken using the ACS770ECB-200B
Accuracy Data
Sensitivity versus Ambient Temperature
6
10.15
4
10.10
Sens (mV/A)
VOE (mV)
Electrical Offset Voltage versus Ambient Temperature
2
0
-2
10.00
9.95
9.90
-4
9.85
9.80
-6
–50
10.05
-25
0
25
50
75
100
125
150
–50
-25
0
25
TA (°C)
75
100
125
150
Magnetic Offset Error versus Ambient Temperature
0
600
-0.1
500
-0.2
400
IERROM (mA)
ELIN (%)
Nonlinearity versus Ambient Temperature
-0.3
-0.4
-0.5
-0.6
–50
50
TA (°C)
300
200
100
-25
0
25
50
75
100
125
0
–50
150
-25
0
25
TA (°C)
50
75
100
125
150
TA (°C)
Total Output Error versus Ambient Temperature
1.5
1.0
ETOT (%)
0.5
0
-0.5
-1.0
-1.5
-2.0
–50
-25
0
25
50
75
100
125
150
TA (°C)
Mean + 3 sigma
Mean
Mean – 3 sigma
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
17
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Data Taken using the ACS770LCB-100B
Timing Data
Response Time
IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF
IP = 60 A
VIOUT
80% of input
80% of output
tRESPONSE = 4.56 µs
Rise Time
IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF
IP = 60 A
VIOUT
90% of output
tr = 4.1 µs
10% of output
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
18
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Propagation Time
IP = 60 A , 10% to 90% rise time = 1 µs, CBYPASS = 0.1 µF, CL = 0.47 nF
IP = 60 A
VIOUT
tPROP = 2.4 µs
20% of input
20% of output
Power-On Delay
IP = 60 A DC, CBYPASS = Open, CL = 0.47 nF
VCC
VCC (min)
tPOD = 88 µs
90% of output
VIOUT
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
19
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
UVLO Enable Time ( tUVLOE )
IP = 0 A , CBYPASS = Open, CL = Open, VCC 5 V to 3 V fall time = 1 µs
tUVLOE = 75.3 µs
VCC
VUVLOL
VIOUT
VIOUT = 0 V
UVLO Disable Time ( tUVLOD )
IP = 0 A , CBYPASS = Open, CL = Open, VCC 3 V to 5 V recovery time = 1 µs
tUVLOD = 13.9 µs
VCC
VCC (min)
VIOUT
90% of output
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
20
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
CHARACTERISTIC DEFINITIONS
Definitions of Accuracy Characteristics
SENSITIVITY (Sens)
The change in device output in response to a 1 A change through
the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain
(mV/G). The linear IC amplifier gain is programmed at the factory
to optimize the sensitivity (mV/A) for the half-scale current of the
device.
NOISE (VNOISE)
The noise floor is derived from the thermal and shot noise
observed in Hall elements. Dividing the noise (mV) by the sensitivity (mV/A) provides the smallest current that the device is able
to resolve.
NONLINEARITY (ELIN)
The ACS770 is designed to provide a linear output in response
to a ramping current. Consider two current levels, I1 and I2. Ideally, the sensitivity of a device is the same for both currents, for
a given supply voltage and temperature. Nonlinearity is present
when there is a difference between the sensitivities measured at
I1 and I2. Nonlinearity is calculated separately for the positive
(ELINpos ) and negative (ELINneg ) applied currents as follows:
∆Sens(∆V) =
Sens(VCC)
VCC
Sens(5V)
5V
× 100 (%)
QUIESCENT OUTPUT VOLTAGE (VIOUT(Q))
The output of the device when the primary current is zero. For
bidirectional current flow, it nominally remains at VCC ⁄ 2. Thus,
VCC = 5 V translates into VIOUT(QBI) = 2.5 V. For unidirectional
devices, when VCC = 5 V, VIOUT(QUNI) = 0.5 V. Variation in
VIOUT(Q) can be attributed to the resolution of the Allegro linear
IC quiescent voltage trim, magnetic hysteresis, and thermal drift.
ELECTRICAL OFFSET VOLTAGE (VOE)
The deviation of the device output from its ideal quiescent value
of VCC ⁄ 2 for bidirectional sensor ICs and 0.5 V for unidirectional
sensor ICs, due to nonmagnetic causes.
MAGNETIC OFFSET ERROR (IERROM)
ELINpos = 100 (%) × {1 – (SensIPOS2 / SensIPOS1 ) }
The magnetic offset is due to the residual magnetism (remnant
field) of the core material. The magnetic offset error is highest
when the magnetic circuit has been saturated, usually when the
device has been subjected to a full-scale or high-current overload
condition. The magnetic offset is largely dependent on the material used as a flux concentrator.
ELINneg = 100 (%) × {1 – (SensINEG2 / SensINEG1 )}
TOTAL OUTPUT ERROR (ETOT)
where:
SensIx = (VIOUT(Ix) – VIOUT(Q))/ Ix
and IPOSx and INEGx are positive and negative currents.
Then:
ELIN = max( ELINpos , ELINneg )
RATIOMETRY
The device features a ratiometric output. This means that the
quiescent voltage output, VIOUTQ, and the magnetic sensitivity,
Sens, are proportional to the supply voltage, VCC.The ratiometric
change (%) in the quiescent voltage output is defined as:
∆VIOUTQ(∆V) =
VIOUTQ(VCC) VIOUTQ(5V)
VCC
5V
The maximum deviation of the actual output from its ideal value,
also referred to as accuracy, illustrated graphically in the output
voltage versus current chart on the following page.
ETOT is divided into four areas:
• 0 A at 25°C. Accuracy at the zero current flow at 25°C,
without the effects of temperature.
• 0 A over Δ temperature. Accuracy at the zero current flow
including temperature effects.
• Full-scale current at 25°C. Accuracy at the full-scale current at
25°C, without the effects of temperature.
• Full-scale current over Δ temperature. Accuracy at the fullscale current flow including temperature effects.
× 100 (%)
and the ratiometric change (%) in sensitivity is defined as:
ETOT(IP) =
VIOUT(IP) – VIOUT_IDEAL(IP)
SensIDEAL × IP
× 100 (%)
where
VIOUT_IDEAL(IP) = VIOUT(Q) + (SensIDEAL × IP )
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21
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Definitions of Dynamic Response Characteristics
POWER-ON DELAY (tPOD)
Applied Magnetic Field
(%)
90
Transducer Output
When the supply is ramped to its operating voltage, the device
requires a finite time to power its internal components before
responding to an input magnetic field.
Power-On Delay, tPOD , is defined as the time it takes for the output voltage to settle within ±10% of its steady state value under
an applied magnetic field, after the power supply has reached its
minimum specified operating voltage, VCC(min), as shown in the
chart at right.
Rise Time, tr
20
10
0
t
Propagation Delay, tPROP
TEMPERATURE COMPENSATION POWER-ON TIME
(tTC )
After Power-On Delay, tPOD , elapses, tTC also is required before a
valid temperature compensated output.
RISE TIME (tr)
The time interval between a) when the device reaches 10% of its
full scale value, and b) when it reaches 90% of its full scale value.
Both tr and tRESPONSE are detrimentally affected by eddy current
losses observed in the conductive IC ground plane.
RESPONSE TIME (tRESPONSE)
The time interval between a) when the applied current reaches
80% of its final value, and b) when the sensor reaches 80% of its
output corresponding to the applied current.
Output Voltage versus Sampled Current
Total Output Error at 0 A and at Full-Scale Current
PROPAGATION DELAY (tPROP)
The time interval between a) when the input current reaches 20%
of its final value, and b) when the output reaches 20% of its final
value.
Accuracy
25°C Only
Average
VIOUT
POWER-ON RESET VOLTAGE (VPOR )
At power-up, to initialize to a known state and avoid current
spikes, the ACS770 is held in Reset state. The Reset signal is
disabled when VCC reaches VUVLOH and time tPORR has elapsed,
allowing output voltage to go from a high impedance state
into normal operation. During power-down, the Reset signal is
enabled when VCC reaches VPORL , causing output voltage to
go into a high impedance state. (Note that a detailed description
of POR and UVLO operation can be found in the Functional
Description section.)
Accuracy
Over ∆Temp erature
Increasing VIOUT(V)
Accuracy
Over ∆Temp erature
IP(min)
Accuracy
25°C Only
–IP (A)
+IP (A)
Half Scale
IP(max)
0A
Decreasing VIOUT(V)
Accuracy
25°C Only
Accuracy
Over ∆Temp erature
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115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
22
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
POWER-ON RESET RELEASE TIME (tPORR)
SYMMETRY (ESYM)
When VCC rises to VPORH , the Power-On Reset Counter starts.
The ACS770 output voltage will transition from a high impedance state to normal operation only when the Power-On Reset
Counter has reached tPORR and VCC has exceeded VUVLOH .
The degree to which the absolute voltage output from the IC
varies in proportion to either a positive or negative half-scale primary current. The following equation is used to derive symmetry:
UNDERVOLTAGE LOCKOUT THRESHOLD (VUVLO )
If VCC drops below VUVLOL , output voltage will be locked to
GND. If VCC starts rising, the ACS770 will come out of the
locked state when VCC reaches VUVLOH .
100
(VV
)
– VIOUT(Q)
–
V
IOUT(Q)
IOUT_–half-scale amperes
IOUT_+half-scale amperes
UVLO ENABLE/DISABLE RELEASE TIME (tUVLO )
When a falling VCC reaches VUVLOL , time tUVLOE is required
to engage Undervoltage Lockout state. When VCC rises above
VUVLOH , time tUVLOD is required to disable UVLO and have a
valid output voltage.
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115 Northeast Cutoff
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23
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
FUNCTIONAL DESCRIPTION
Power-On Reset (POR) and Undervoltage
Lock-Out (UVLO) Operation
The descriptions in this section assume:
Temperature = 25°C,
VCC = 5 V,
no output load, and
no significant current flow through the sensor IC.
Voltage levels shown are specific to a bidirectional ACS770;
however, the POR and UVLO functionality described also applies
to unidirectional sensors.
The reference numbers section refer to figures 1 and 2.
Power-Up
At power-up, as VCC ramps up, the output is in a high impedance
state. When VCC crosses VPORH (location [1] in figure 1 and [ 1′ ]
in figure 2), the POR Release counter starts counting for tPORR .
At this point, if VCC exceeds VUVLOH [ 2′ ], the output will go to
VCC / 2 after tUVLOD [ 3′ ] . If VCC does not exceed VUVLOH [2],
the output will stay in the high impedance state until VCC reaches
VUVLOH [3] and then will go to VCC / 2 after tUVLOD [ 4 ].
VCC drops below VCC(min) = 4.5 V
If VCC drops below VUVLOL [ 4′, 5 ] , the UVLO Enable Counter
starts counting. If VCC is still below VUVLOL when the counter
reaches tUVLOE , the UVLO function will be enabled and the
ouput will be pulled near GND [ 6 ] . If VCC exceeds VUVLOL
before the UVLO Enable Counter reaches tUVLOE [ 5′ ] , the output
will continue to be VCC / 2.
Coming Out of UVLO
While UVLO is enabled [ 6 ] , if VCC exceeds VUVLOH [ 7 ] ,
UVLO will be disabled after tUVLOD , and the output will be
VCC / 2 [ 8 ] .
Power-Down
As VCC ramps down below VUVLOL [ 6′, 9 ] , the UVLO Enable
Counter will start counting. If VCC is higher than VPORL when
the counter reaches tUVLOE , the UVLO function will be enabled
and the output will be pulled near GND [ 10 ] . The output will
enter a high impedance state as VCC goes below VPORL [ 11 ] . If
VCC falls below VPORL before the UVLO Enable Counter reaches
tUVLOE , the output will transition directly into a high impedance
state [ 7′ ].
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115 Northeast Cutoff
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1.508.853.5000; www.allegromicro.com
24
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
ACS770xCB
VCC
1
2
3
5.0
5
4
VUVLOH
VUVLOL
VPORH
VPORL
6
7
9
8
10 11
tUVLOE
tUVLOE
GND
VOUT
Time
Slope =
VCC / 2
2.5
tPORR
tUVLOD
GND
tUVLOD
High Impedance
High Impedance
Time
Figure 1: POR and UVLO Operation: Slow Rise Time Case
VCC
5.0
VUVLOH
VUVLOL
VPORH
VPORL
1’
2’
3’
4’ 5’
6’ 7’
< tUVLOE
GND
VOUT
Time
tPORR
2.5
Slope =
VCC / 2
< tUVLOE
Slope =
VCC / 2
tUVLOD
GND
High Impedance
Time
High Impedance
Figure 2: POR and UVLO Operation: Fast Rise Time Case
Allegro MicroSystems, LLC
115 Northeast Cutoff
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1.508.853.5000; www.allegromicro.com
25
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Chopper Stabilization Technique
When using Hall-effect technology, a limiting factor for
switchpoint accuracy is the small signal voltage developed across
the Hall element. This voltage is disproportionally small relative
to the offset that can be produced at the output of the Hall sensor
IC. This makes it difficult to process the signal while maintaining
an accurate, reliable output over the specified operating temperature and voltage ranges.
Chopper stabilization is a unique approach used to minimize
Hall offset on the chip. Allegro employs a patented technique to
remove key sources of the output drift induced by thermal and
mechanical stresses. This offset reduction technique is based on
a signal modulation-demodulation process. The undesired offset
signal is separated from the magnetic field-induced signal in the
frequency domain, through modulation. The subsequent demodulation acts as a modulation process for the offset, causing the
magnetic field-induced signal to recover its original spectrum at
baseband, while the DC offset becomes a high-frequency signal.
The magnetic-sourced signal then can pass through a low-pass
filter, while the modulated DC offset is suppressed.
In addition to the removal of the thermal and stress related offset,
this novel technique also reduces the amount of thermal noise
in the Hall sensor IC while completely removing the modulated
residue resulting from the chopper operation. The chopper stabilization technique uses a high-frequency sampling clock. For
demodulation process, a sample-and-hold technique is used. This
high-frequency operation allows a greater sampling rate, which
results in higher accuracy and faster signal-processing capability.
This approach desensitizes the chip to the effects of thermal and
mechanical stresses, and produces devices that have extremely
stable quiescent Hall output voltages and precise recoverability after temperature cycling. This technique is made possible
through the use of a BiCMOS process, which allows the use of
low-offset, low-noise amplifiers in combination with high-density
logic integration and sample-and-hold circuits.
Regulator
Clock/Logic
Hall Element
Amp
Anti-Aliasing
LP Filter
Tuned
Filter
Figure 3: Concept of Chopper Stabilization Technique
Allegro MicroSystems, LLC
115 Northeast Cutoff
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1.508.853.5000; www.allegromicro.com
26
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
ACS770xCB
PACKAGE OUTLINE DRAWINGS
For Reference Only – Not for Tooling Use
(Reference DWG-9111 & DWG-9110)
Dimensions in millimeters – NOT TO SCALE
Dimensions exclusive of mold flash, gate burs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
14.0 ±0.2
0.5
3.5 ±0.2
4.0 ±0.2
3.0 ±0.2
R3
1º±2°
1.50 ±0.10
5
R1
R2
4
A
∅ 0.5 B
3
17.5 ±0.2
4
21.4
13.00 ±0.10
Branded
Face
4.40 ±0.10
∅ 0.8
1.9 ±0.2
∅ 1.5
2.9 ±0.2
0.51 ±0.10
1
2
3
0.381
+0.060
–0.030
1.91
5º±5°
10.00 ±0.10
B
PCB Layout Reference View
3.5 ±0.2
NNNNNNN
TTT-AAA
7.00 ±0.10
LLLLLLL
A Dambar removal intrusion
YYWW
B Perimeter through-holes recommended
C Branding scale and appearance at supplier discretion
1
C
Standard Branding Reference View
N
T
A
L
Y
= Device part number
= Temperature code
= Amperage range
= Lot number
= Last two digits of year of
manufacture
W = Week of manufacture
= Supplier emblem
Creepage distance, current terminals to signal pins: 7.25 mm
Clearance distance, current terminals to signal pins: 7.25 mm
Package mass: 4.63 g typical
Figure 4: Package CB, 5-Pin, Leadform PFF
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
27
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
For Reference Only – Not for Tooling Use
(Reference DWG-9111, DWG-9110)
Dimensions in millimeters – NOT TO SCALE
Dimensions exclusive of mold flash, gate burs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
14.0 ±0.2
4.0 ±0.2
3.0 ±0.2
∅ 0.8
5
4
∅ 1.5
1.50 ±0.10
1.91
B
2.75 ±0.10
A
PCB Layout Reference View
23.50 ±0.5
NNNNNNN
TTT-AAA
13.00 ±0.10
4.40 ±0.10
Branded
Face
LLLLLLL
YYWW
1.9 ±0.2
2.9 ±0.2
1
0.51 ±0.10
1
2
B
3
0.381
+0.060
–0.030
Standard Branding Reference View
N
T
A
L
Y
= Device part number
= Temperature code
= Amperage range
= Lot number
= Last two digits of year of
manufacture
W = Week of manufacture
= Supplier emblem
5º±5°
3.5 ±0.2
10.00 ±0.10
7.00 ±0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
Creepage distance, current terminals to signal pins: 7.25 mm
Clearance distance, current terminals to signal pins: 7.25 mm
Package mass: 4.63 g typical
Figure 5: Package CB, 5-Pin, Leadform PSF
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
28
ACS770xCB
Thermally Enhanced, Fully Integrated, Hall Effect-Based
High Precision Linear Current Sensor IC with 100 µΩ Current Conductor
Revision History
Revision
Revision Date
1
December 8, 2014
2
January 20, 2015
3
March 11, 2015
4
April 8, 2015
Description of Revision
Revised Selection Guide
Revised VPORH Typical Value
Revised VRCC, VRIOUT, IOUT(Source), IERROM (100 A and 150 A) values, and added Symmetry to
X150B PERFORMANCE CHARACTERISTICS table
Updated TUV certification
Copyright ©2011-2015, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its use;
nor for any infringement of patents or other rights of third parties which may result from its use.
For the latest version of this document, visit our website:
www.allegromicro.com
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1.508.853.5000; www.allegromicro.com
29